Abstract: In a facility state monitoring system, a sensor node includes a sensor that outputs, as sensor data, data indicating the state of a facility as a monitoring target, a communication unit, and a power supply unit that supplies power to the sensor and the communication unit. The sensor node is commonly used by multiple monitoring targets. A receiver receives the sensor data transmitted from the communication unit. A state detection unit receives the sensor data received by the receiver, and learns, as learning data, normal states of the monitoring targets based on normal sensor data corresponding to normal operations of the monitoring targets. In response to the receiver receiving the sensor data transmitted from the sensor node after learning, the state detection unit compares states of the monitoring targets indicated by the sensor data with the learning data to detect an abnormality occurrence or symptom in the monitoring targets.

Abstract: A piezoelectric element includes a support and a vibration unit disposed on the support. The vibration unit includes a piezoelectric film and an electrode film connected to the piezoelectric film to extract charges generated by deformation of the piezoelectric film. The vibration unit has a support region supported on the support, and a vibration region connected to the support region and floating from the support. The vibration unit outputs a pressure detection signal based on the charges. The vibration region includes a plurality of slits extending from a support region side toward a center of the vibration region and is in a state of being supported at both ends with respect to the support region.

Abstract: A piezoelectric element includes a plurality of vibration regions that are separated from each other by a slit, and the slit is formed to have a tapered portion that is tapered from a first surface of the vibration regions on an opposite side to a support to a second surface opposite to the first surface. An electrode film is positioned inside than the slit when being viewed from a normal direction orthogonal to the first surface, and an angle formed by a side surface of the tapered portion in the vibration region and a surface parallel to the first surface is in a range of 39 to 81 degrees.

Abstract: A computer system determines that a player character is in a preparatory state for executing an external function (close-range attack) toward a target character (e.g., enemy character). Furthermore, the computer system determines that the player character satisfies an executable condition that enables execution of the external function. When the player character satisfies the executable condition, the computer system causes the player character to execute the external function. Then, the computer system executes protection control for protecting the player character from another character while the player character is in the preparatory state.

Abstract: A vertical-cavity surface-emitting laser includes a post extending along a first axis and an electrode surrounding the first axis. The post includes a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The second distributed Bragg reflector includes a semiconductor region, a first high-resistance region, and a second high-resistance region. The first high-resistance region has an inner edge located farther from the first axis than the inner edge of the electrode in a direction orthogonal to the first axis. The second high-resistance region has an inner edge located closer to the first axis than the inner edge of the electrode in a direction orthogonal to the first axis. The first high-resistance region and the second high-resistance region have a first thickness and a second thickness, respectively. The second thickness is greater than the first thickness.

Abstract: A surface-emitting semiconductor laser includes a first conductive type semiconductor layer, a major mesa, a first sub-mesa, and a second sub-mesa. The first conductive type semiconductor layer has a portion on a first region and a portion on a third region that are separated from each other. The major mesa includes a first semiconductor laminate provided over the first region and on the first conductive type semiconductor layer, an active layer, a second semiconductor laminate, and a second conductive type semiconductor layer. The first sub-mesa is provided over the second region and on the first conductive type semiconductor layer. The second sub-mesa portion is provided over the third region and on the first conductive type semiconductor layer. The first bump is provided on the first pad electrode over the first sub-mesa. The second bump is provided on the second pad electrode over the second sub-mesa.

Abstract: A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area.

Abstract: A heat-resistant cold rolled ferritic stainless steel sheet containing, in mass %, 0.02% or less of C, 0.1% to 1.0% of Si, greater than 0.6% to 1.5% of Mn, 0.01% to 0.05% of P, 0.0001% to 0.0100% of S, 13.0% to 20.0% of Cr, 0.1% to 3.0% of Mo, 0.005% to 0.20% of Ti, 0.3% to 1.0% of Nb, 0.0002% to 0.0050% of B, 0.005% to 0.50% of Al, 0.02% or less of N, with the balance being Fe and inevitable impurities, in which {111}-oriented grains are present at an area ratio of 20% or greater in a region from a surface layer to t/4 (t is a sheet thickness), {111}-oriented grains are present at an area ratio of 40% or greater in a region from t/4 to t/2, and {011}-oriented grains are present at an area ratio of 15% or less in the entire region in a thickness direction.

Abstract: A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.

Abstract: A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.

Abstract: A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

Abstract: A martensitic stainless steel used for a brake disk of a two-wheeled vehicle includes: in % by mass, C of 0.025% to 0.080%, Si of 0.05% to 0.8%, Mn of 0.5% to 1.5%, P of 0.035% or less, S of 0.015% or less, Cr of 11.0% to 13.5%, Ni of 0.01% to 0.50%, Cu of 0.01% to 0.08%, Mo of 0.01% to 0.30%, V of 0.01% to 0.10%, Al of 0.05% or less, and N of 0.015% to 0.060%; a DFE value defined by a formula (1) ranging from 5 to 30; and a ? ferrite fraction observed in a cross section structure ranging from 5% to 30% by an area ratio. Ti, B, Nb, Sn and Bi may be added.

Abstract: To provide an add-in material to be added to a porous molded body base, the add-in material being capable of developing a pore of appropriate size efficiently without degrading the formability and productivity of a porous molded body, particularly a porous fired body when producing the porous molded body. A shrinkable fiber composed of a thermoplastic resin and to be dispersed in a base of a porous molded body, particularly a porous fired body, wherein the shrinkable fiber has a fiber diameter of 10 to 40 ?m, a fiber length of 1 to 20 mm, and a dry-heat shrinkage percentage of at least 8% when subjected to heat treatment at 80° C. for 5 minutes.

Abstract: The present invention is directed to a stainless steel brake disc which is excellent in toughness, corrosion resistance, and wear resistance, and comprises, in % by mass, 0.030 to 0.080% of C, 0.05% to 1.0% of Si, 1.0 to 1.5% of Mn, 0.035% or less of P, 0.015% or less of S, 11.0 to 14.0% of Cr, 0.01 to 0.50% of Ni, 0.001 to 0.15% of V, less than 0.1% of Nb, 0.05% or less of Ti, 0.05% or less of Zr, 0.05% or less of Al, 0.015 to 0.060% of N, 0.0002% or more and 0.0050% or less of B, and 0.0080% or less of O, wherein an AT value of equation 1 is 0.055 to 0.090, equation 2 is satisfied, a ferrite phase fraction, in which an IQ value of an EBSD pattern is 4,000 or more, is 1% to 15%, a Charpy impact value is 50 J/cm2 or more, and hardness is 32 to 38 HRC. C+0.8(N?B)??(1) PV=1.2Ti+0.8Zr+Nb+1.1Al+O?0.

Abstract: A heat-resistant cold rolled ferritic stainless steel sheet containing, in mass %, 0.02% or less of C, 0.1% to 1.0% of Si, greater than 0.6% to 1.5% of Mn, 0.01% to 0.05% of P, 0.0001% to 0.0100% of S, 13.0% to 20.0% of Cr, 0.1% to 3.0% of Mo, 0.005% to 0.20% of Ti, 0.3% to 1.0% of Nb, 0.0002% to 0.0050% of B, 0.005% to 0.50% of Al, 0.02% or less of N, with the balance being Fe and inevitable impurities, in which {111}-oriented grains are present at an area ratio of 20% or greater in a region from a surface layer to t/4 (t is a sheet thickness), {111}-oriented grains are present at an area ratio of 40% or greater in a region from t/4 to t/2, and {011}-oriented grains are present at an area ratio of 15% or less in the entire region in a thickness direction.

Abstract: A used paper recycling apparatus capable to be installed in small office or general household, friendly to environment and low in running cost, and assuring high confidentiality. A used paper recycling apparatus comprising a pulp making section for crushing and beating used paper and making into pulp, a paper making section for recycling paper by making used paper pulp from the pulp making section, and a control section for driving and controlling by interlocking the pulp making section and paper making section, which are incorporated in a furniture size apparatus case, in which the pulp making section includes a crushing unit for stirring and grinding the used paper, and a beating unit for beating the crushed used paper from the crushing unit, and the crushing unit and beating unit are circulating the used paper pulp.

Abstract: The present invention is directed to a stainless steel brake disc which is excellent in toughness, corrosion resistance, and wear resistance, and comprises, in % by mass, 0.030 to 0.080% of C, 0.05% to 1.0% of Si, 1.0 to 1.5% of Mn, 0.035% or less of P, 0.015% or less of S, 11.0 to 14.0% of Cr, 0.01 to 0.50% of Ni, 0.001 to 0.15% of V, less than 0.1% of Nb, 0.05% or less of Ti, 0.05% or less of Zr, 0.05% or less of Al, 0.015 to 0.060% of N, 0.0002% or more and 0.0050% or less of B, and 0.0080% or less of O, wherein an AT value of equation 1 is 0.055 to 0.090, equation 2 is satisfied, a ferrite phase fraction, in which an IQ value of an EBSD pattern is 4,000 or more, is 1% to 15%, a Charpy impact value is 50 J/cm2 or more, and hardness is 32 to 38 HRC. C+0.8(N?B)??(1) PV=1.2Ti+0.8Zr+Nb+1.1Al+O?0.

Abstract: A method of manufacturing a semiconductor light-receiving element includes: forming a semiconductor layer structure having a one-conductivity-type semiconductor layer having a first conduction type located on a side of light incidence, an opposite-conductivity-type semiconductor layer having a second conduction type opposite to the first conduction type, and a light-absorbing layer between the one-conductivity-type semiconductor layer and the opposite-conductivity type semiconductor layer, the opposite-conductivity-type semiconductor layer having a structure in which a first semiconductor layer comprised of a binary mixed crystal, a second semiconductor layer comprised of a three-or-more-element mixed crystal, and a third semiconductor layer comprised of a three-or-more-element mixed crystal having an energy gap smaller than that of the second semiconductor layer are laminated in this order from the light incidence side; forming a metal film that is in contact with the third semiconductor layer; and performin

Abstract: Provided is a heat-resistant cold rolled ferritic stainless steel sheet containing, in terms of mass %, 0.02% or less of C, 0.1% to 1.0% of Si, greater than 0.6% to 1.5% of Mn, 0.01% to 0.05% of P, 0.0001% to 0.0100% of S, 13.0% to 20.0% of Cr, 0.1% to 3.0% of Mo, 0.005% to 0.20% of Ti, 0.3% to 1.0% of Nb, 0.0002% to 0.0050% of B, 0.005% to 0.50% of Al, and 0.02% or less of N, with the balance being Fe and inevitable impurities, in which {111}-oriented grains are present at an area ratio of 20% or greater in a region from a surface layer to t/4 (t is a sheet thickness), {111}-oriented grains are present at an area ratio of 40% or greater in a region from t/4 to t/2, and {011}-oriented grains are present at an area ratio of 15% or less in the entire region in a thickness direction.

Abstract: A semiconductor light-receiving device includes two lenses; and a concave region, a height of the sidewall being higher than a top of the lenses, a distance between a position H and a lower edge of the sidewall vertical to a line segment C1 being grater than following condition: {(r+L)2?(W/2)2}1/2 where: C1 is a line segment connecting centers of the lenses; H is a midpoint of the C1; r is a radius of the lenses; W is an interval between the centers; and C2 is a lines passing through the centers in a direction vertical to the C1, wherein: the lower edge of the concave portion in an outer side of a region between the C2 is concentrically formed so as to have a distance of (r+L) from the center of the lenses; and W is following condition: W<2 (r+L).