Abstract: To facilitate setting an image displayed at the time of audio distribution, a server according to one embodiment includes an information storage unit, a user information management unit that performs various processing concerning management of user information, and a content distribution control unit that controls content distribution. The user information management unit specifies, based on distributor-user related information, a recommended preset image from among a plurality of preset images provided in advance, and sets, as a display-image, one image selected from among one or more images including the recommended preset image. The content distribution control unit presents a distributor user screen on which the user can instruct switching between video or audio distribution. The unit further presents, to an audience user, an audience user screen that has a display region where video is displayed when the video is distributed and a display-image is shown when audio is distributed.

Abstract: An advertisement distribution system executes a first step in which a server requests that a distributor client submit advertisements, a second step in which the advertisements submitted by the distributor client are provided to an advertiser client according to the request, a third step in which the advertisement that is employed from among the provided advertisements is received by the advertiser client, and the server is notified by the advertiser client, a fourth step in which a video is received from the distributor client by the server , and a fifth step in which the server distributes the video received from the distributor client, and provides the employed advertisement at a specific timing in the distribution of the video.

Abstract: A setup that allows special communication between the user and the specific user is provided. The server in an embodiment includes an information storage unit, an event reservation management unit, a virtual space management unit, and a video chat control unit. The virtual space management unit causes a standby screen to be displayed, the standby screen being a screen for standing by for the video chat with the specific user and including user information of a plurality of users standing by for the video chat. The video chat control unit specifies, in accordance with a predetermined rule, one user from the plurality of users standing by for video chat, and causes the communication for video chat to be performed between the terminal of the specified user and the terminal of the specific user.

Abstract: A design apparatus for an electronic device is provided. The apparatus includes: a selection unit that selects a first component which meets a characteristic condition, from a component database which includes a characteristic and a recommended level of each of components, the recommended level being variable; a first determination unit that acquires a recommended level of the first component from the component database, and determines the acquired recommended level; a creation unit that creates design data of the electronic device including the first component; and a second determination unit that acquires, after the creation, a recommended level of the first component from the component database, and determines the acquired recommended level after the creation.

Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H3C)—N?N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.

Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

Abstract: Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.

Abstract: Each of the M basic vectors in a noise code book 260 is multiplied by a factor ±1 in a sign adder 270 and combined in an adder 280 to create 2M noise signed vectors. The characteristic of the binary Gray code is utilized as follows. A change ?Gu obtained between a noise signed vector based on a signed word i of the binary Gray code and a noise sign vector based on a sign word u adjacent to the sign word i and different from the sign word i only in a predetermined bit position v is used in such a manner that a sign word u? which is next to reverse the bit position v on the Gray code sequence can express a change ?Gu? from the noise signed vector by utilizing the fact that the sign word u? differs from the sign word u only in one bit position w excluding the bit position V. Thus, calculation is simplified, increasing the vector search speed.

Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Abstract: Methods for low thermal budget silicon dioxide chemical vapor deposition in single-wafer chambers are provided. In semiconductor manufacturing, Si2H6-based oxide deposition is worthy of consideration as a viable alternative to higher temperature thermal CVD processes. A process of forming a film on a substrate is provided, the process comprising: placing a substrate in a thermal low-pressure chemical vapor deposition single-wafer chamber; flowing disilane (Si2H6) into the chamber; flowing nitrous oxide (N2O) into the chamber at a ratio of at least approximately 300:1 N2O:Si2H6; heating the chamber at a temperature of from approximately 450° C. to approximately 550° C.; and forming the film on the substrate, wherein the film comprises silicon dioxide (SiO2).

Abstract: It is an object of the present invention to provide a novel aluminum tube of an oval cross section that has a wider range of applications and added values. A disk-shaped metal slug (21) is impact-extruded with the use of a die (14) and a punch (13) each having an optimally designed structure to form a metal tube (T) integrally including a mouth, a shoulder and a body of an oval cross section. A hem portion of the oval body of the tube (T) thus formed and hardened by the impact extrusion is once deformed into a circular shape, and then trimmed off by a turning operation.

Abstract: Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.

Abstract: A resin composition for a foam is composed of a branched rubbery olefin based soft resin (C) where its gel fraction (a weight percentage of an insoluble content after extraction with xylene boiled at 138° C. for 3 hours) is less than 5%, and a volume ratio of a component which exhibits a mobility of less than 400 microseconds at a T2 (spin-spin relaxation) time by proton (H+) pulse nuclear magnetic resonance is 55 to 95%, obtained by kneading and reacting to thicken an organic peroxide crosslinking type olefin based copolymer rubber (A) and an organic peroxide decomposing type crystalline olefin resin (B). By the use of this resin composition, it is possible to provide foamed articles which can be used for interior parts for automobiles, have high to low foaming magnifications and a recycling property, and are soft and excellent in cushion property, thermal insulating property and in-mold foam molding property.

Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

Abstract: It is an object of the present invention to provide a novel aluminum tube of an oval cross section that has a wider range of applications and added values. A disk-shaped metal slug (21) is impact-extruded with the use of a die (14) and a punch (13) each having an optimally designed structure to form a metal tube (T) integrally including a mouth, a shoulder and a body of an oval cross section. A hem portion of the oval body of the tube (T) thus formed and hardened by the impact extrusion is once deformed into a circular shape, and then trimmed off by a turning operation.

Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Abstract: A planar antenna device comprises a ground plane, a planar antenna element having a principal plane mounted above the ground plane, and a cavity, having an opening partially exposing the antenna element, placed on the ground plane in order to cover the entire antenna element contactlessly.