Abstract: A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.

Abstract: A method includes providing a first bonding surface on a first substrate, the first bonding surface including a bonding layer that is thermally curable or photocurable. The method includes providing a second bonding surface on a second substrate. The method includes bonding the first substrate to the second substrate by making physical contact between the first bonding surface and second bonding surface. The method further includes applying thermal energy or light to the bonding layer.

Abstract: A method includes providing a first substrate with a first surface including an alkyne moiety. The method includes providing a second substrate with a second surface including an azide moiety. The method further includes bonding the first substrate to the second substrate. The bonding of the first substrate to the second substrate includes making physical contact between the first surface and the second surface at an interface and chemically reacting the alkyne moiety with the azide moiety through a cycloaddition mechanism, thereby forming a triazole moiety-linked layer at the interface.

Abstract: An analysis apparatus according to an aspect of the present disclosure includes a substrate holding unit, an insertion unit, and a gas analysis unit. The substrate holding unit holds a bonded substrate where a first substrate and a second substrate are bonded. The insertion unit is capable of being inserted between a bonding surface of the first substrate and a bonding surface of the second substrate in the bonded substrate that is held by the substrate holding unit. The gas analysis unit analyzes a component(s) of a gas or gasses that is/are jetted from between a bonding surface of the first substrate and a bonding surface of the second substrate.

Abstract: A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

Abstract: A bonding system includes a bonding device, an inspection device and a controller. The bonding device forms a combined substrate by bonding a first substrate and a second substrate to each other. The inspection device inspects the combined substrate. The controller controls the inspection device. The controller includes a measurement controller, a comparison unit and a re-measurement controller. The measurement controller causes the inspection device to measure the combined substrate at a first number of measurement points. The comparison unit compares, with a reference, an inspection result including a deviation amount between the first substrate and the second substrate in the combined substrate based on a measurement result. The re-measurement controller causes the inspection device to re-measure the combined substrate at a second number of measurement points greater than the first number of measurement points based on a comparison result obtained by the comparison unit.

Abstract: A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.

Abstract: A bonding method includes: preparing a first semiconductor substrate having a first surface and a second semiconductor substrate having a second surface; hydrophilizing the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate; bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing; and bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing. The enhancing of the bonding strength includes performing heat treatment on the first semiconductor substrate and the second semiconductor substrate in a first temperature range; and performing heat treatment on the first semiconductor substrate and the second semiconductor substrate at a target temperature after the performing of the heat treatment in the first temperature range.

Abstract: A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.

Abstract: An analysis apparatus according to an aspect of the present disclosure includes a substrate holding unit, an insertion unit, and a gas analysis unit. The substrate holding unit holds a polymerization substrate where a first substrate and a second substrate are bonded. The insertion unit is capable of being inserted between a bonding surface of the first substrate and a bonding surface of the second substrate in the polymerization substrate that is held by the substrate holding unit. The gas analysis unit analyzes a component(s) of a gas or gasses that is/are jetted from between a bonding surface of the first substrate and a bonding surface of the second substrate.

Abstract: A method includes providing a first substrate with a first surface including an alkyne moiety. The method includes providing a second substrate with a second surface including an azide moiety. The method further includes bonding the first substrate to the second substrate. The bonding of the first substrate to the second substrate includes making physical contact between the first surface and the second surface at an interface and chemically reacting the alkyne moiety with the azide moiety through a cycloaddition mechanism, thereby forming a triazole moiety-linked layer at the interface.

Abstract: A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.

Abstract: A method includes providing a first bonding surface on a first substrate, the first bonding surface including a bonding layer that is thermally curable or photocurable. The method includes providing a second bonding surface on a second substrate. The method includes bonding the first substrate to the second substrate by making physical contact between the first bonding surface and second bonding surface. The method further includes applying thermal energy or light to the bonding layer.

Abstract: A surface modifying method of modifying a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas includes an adjusting process and a modifying process. In the adjusting process, an amount of moisture in a processing vessel is adjusted by supplying a humidified gas into the processing vessel allowed to accommodate the substrate therein. In the modifying process, the bonding surface of the substrate is modified by forming the plasma of the processing gas in the processing vessel in a state that the amount of moisture in the processing vessel is adjusted.

Abstract: A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

Abstract: A measuring method includes measuring a displacement A1, placing an imaging unit 20 at a position where the imaging unit is allowed to image a measurement mark MI and imaging the measurement mark M1. In the measuring of the displacement A1, the displacement A1 of a surface of a combined substrate, which is composed of two sheets of substrates bonded to each other, on a side of the imaging unit 20 at a position where the measurement mark M1 for position deviation measurement, which is provided within the combined substrate, is placed is measured. In the imaging of the measurement mark M1, the measurement mark M1 is imaged by the imaging unit 20 while putting the measurement mark M1 in focus by moving a focal position back and forth with respect to a focal position which is previously set based on the displacement A1.

Abstract: A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

Abstract: A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.

Abstract: A bonding system includes a bonding device, an inspection device and a controller. The bonding device forms a combined substrate by bonding a first substrate and a second substrate to each other. The inspection device inspects the combined substrate. The controller controls the inspection device. The controller includes a measurement controller, a comparison unit and a re-measurement controller. The measurement controller causes the inspection device to measure the combined substrate at a first number of measurement points. The comparison unit compares, with a reference, an inspection result including a deviation amount between the first substrate and the second substrate in the combined substrate based on a measurement result. The re-measurement controller causes the inspection device to re-measure the combined substrate at a second number of measurement points greater than the first number of measurement points based on a comparison result obtained by the comparison unit.

Abstract: A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.