Patents by Inventor Yuji Nishibe

Yuji Nishibe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240111358
    Abstract: An information processing apparatus including circuitry that acquires information indicating a spatial relationship between a real object and a virtual object, and initiate generation of a user feedback based on the acquired information, the user feedback being displayed to be augmented to a generated image obtained based on capturing by an imaging device, or augmented to a perceived view of the real world, and wherein a characteristic of the user feedback is changed when the spatial relationship between the real object and the virtual object changes.
    Type: Application
    Filed: December 6, 2023
    Publication date: April 4, 2024
    Inventors: ATSUSHI ISHIHARA, TSUYOSHI ISHIKAWA, HIROYUKI AGA, KOICHI KAWASAKI, MITSURU NISHIBE, YUJI KUSANO
  • Patent number: 10593609
    Abstract: A semiconductor device includes: at least one power semiconductor element; a sealing resin disposed so as to seal the power semiconductor element; and a plurality of electrical terminals each electrically connected to the power semiconductor element and each including a protrusion protruding from a surface of the sealing resin. The protrusion includes a first part that is provided on a side of the sealing resin in a protrusion direction of the protrusion and of which a cross-section intersecting the protrusion direction has one of a circular shape and an oval shape.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: March 17, 2020
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuji Nishibe, Yasuyuki Kageyama, Yasuyoshi Saito, Shinichi Miura, Yasuhide Yagyu
  • Patent number: 10165701
    Abstract: In a converter circuit of an electric power conversion device, an adjustment portion divides a voltage of a battery input to a semiconductor module, by a first capacity element and a second capacity element that are connected in series to each other. Then, a middle point between the first capacity element and the second capacity element is connected to a cooler to fix a potential thereof. The electric power conversion device can ensure that a waveform of a surge voltage that is generated on a creepage surface between a lead frame terminal and the cooler has a negative voltage range (a range where an offset voltage is applied).
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: December 25, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuji Nishibe, Yasuyoshi Saito, Kensuke Wada, Shinichi Miura, Tadafumi Yoshida, Masayuki Nagao, Yoshinobu Murakami, Tomohiro Kawashima
  • Publication number: 20180286774
    Abstract: A semiconductor device includes: at least one power semiconductor element; a sealing resin disposed so as to seal the power semiconductor element; and a plurality of electrical terminals each electrically connected to the power semiconductor element and each including a protrusion protruding from a surface of the sealing resin. The protrusion includes a first part that is provided on a side of the sealing resin in a protrusion direction of the protrusion and of which a cross-section intersecting the protrusion direction has one of a circular shape and an oval shape.
    Type: Application
    Filed: April 3, 2018
    Publication date: October 4, 2018
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuji NISHIBE, Yasuyuki KAGEYAMA, Yasuyoshi SAITO, Shinichi MIURA, Yasuhide YAGYU
  • Patent number: 9903789
    Abstract: A pressure sensor includes a diaphragm, a coupling portion coupled to the diaphragm, and two pressure receiving elements. Each pressure receiving element outputs an output signal that changes according to the temperature and the pressure applied to a pressure receiving surface and has an output characteristic that represents the relationship of the output signal to the pressure and the temperature. The two pressure receiving elements have the same output characteristics. The pressure receiving surface of one of the two pressure receiving elements is connected to the diaphragm through the coupling portion, and the pressure receiving surface of the other pressure receiving element is disconnected from the diaphragm. The pressure sensor outputs a signal that is in accordance with the difference between voltages of the two pressure receiving elements.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: February 27, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yoshiharu Takemoto, Yuji Nishibe, Kentaro Mizuno, Shoji Hashimoto
  • Publication number: 20180013356
    Abstract: In a converter circuit of an electric power conversion device, an adjustment portion divides a voltage of a battery input to a semiconductor module, by a first capacity element and a second capacity element that are connected in series to each other. Then, a middle point between the first capacity element and the second capacity element is connected to a cooler to fix a potential thereof. The electric power conversion device can ensure that a waveform of a surge voltage that is generated on a creepage surface between a lead frame terminal and the cooler has a negative voltage range (a range where an offset voltage is applied).
    Type: Application
    Filed: July 3, 2017
    Publication date: January 11, 2018
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuji NISHIBE, Yasuyoshi SAITO, Kensuke WADA, Shinichi MIURA, Tadafumi YOSHIDA, Masayuki NAGAO, Yoshinobu MURAKAMI, Tomohiro KAWASHIMA
  • Publication number: 20160238485
    Abstract: A pressure sensor includes a diaphragm, a coupling portion coupled to the diaphragm, and two pressure receiving elements. Each pressure receiving element outputs an output signal that changes according to the temperature and the pressure applied to a pressure receiving surface and has an output characteristic that represents the relationship of the output signal to the pressure and the temperature. The two pressure receiving elements have the same output characteristics. The pressure receiving surface of one of the two pressure receiving elements is connected to the diaphragm through the coupling portion, and the pressure receiving surface of the other pressure receiving element is disconnected from the diaphragm. The pressure sensor outputs a signal that is in accordance with the difference between voltages of the two pressure receiving elements.
    Type: Application
    Filed: October 14, 2015
    Publication date: August 18, 2016
    Inventors: Yoshiharu TAKEMOTO, Yuji NISHIBE, Kentaro MIZUNO, Shoji HASHIMOTO
  • Patent number: 8933483
    Abstract: Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ? i = 1 n ? ( R Mi × k Mi ) - ? i = 1 n ? ( R Si × k Si ) ] / ? i = 1 n ? ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: January 13, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hidefumi Takaya, Kimimori Hamada, Yuji Nishibe
  • Patent number: 8809986
    Abstract: Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current. In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ? i = 1 n ? ( R Mi × k Mi ) - ? i = 1 n ? ( R Si × k Si ) ] / ? i = 1 n ? ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: August 19, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hidefumi Takaya, Kimimori Hamada, Yuji Nishibe
  • Publication number: 20140054688
    Abstract: Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ? i = 1 n ? ( R Mi × k Mi ) - ? i = 1 n ? ( R Si × k Si ) ] / ? i = 1 n ? ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
    Type: Application
    Filed: November 7, 2013
    Publication date: February 27, 2014
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hidefumi TAKAYA, Kimimori HAMADA, Yuji NISHIBE
  • Patent number: 8610414
    Abstract: An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current flowing to each booster coil for applying an output voltage, based on an input voltage and the induced electromotive force generated at each booster coil, to a vehicle drive circuit, a coupling factor indicating the extent by which the induced electromotive force in one of multiple booster coils contributes to the voltage between terminals of another booster coil is determined on the basis of a relationship between the coupling factor and current ripple component of each booster coil.
    Type: Grant
    Filed: October 21, 2009
    Date of Patent: December 17, 2013
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hiroo Fuma, Yuji Nishibe, Kota Manabe, Nobuyuki Kitamura
  • Publication number: 20120068296
    Abstract: Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ? i = 1 n ? ( R Mi × k Mi ) - ? i = 1 n ? ( R Si × k Si ) ] / ? i = 1 n ? ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
    Type: Application
    Filed: May 29, 2009
    Publication date: March 22, 2012
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hidefumi Takaya, Kimimori Hamada, Yuji Nishibe
  • Publication number: 20110193408
    Abstract: An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current flowing to each booster coil for applying an output voltage, based on an input voltage and the induced electromotive force generated at each booster coil, to a vehicle drive circuit, a coupling factor indicating the extent by which the induced electromotive force in one of multiple booster coils contributes to the voltage between terminals of another booster coil is determined on the basis of a relationship between the coupling factor and current ripple component of each booster coil.
    Type: Application
    Filed: October 21, 2009
    Publication date: August 11, 2011
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hiroo Fuma, Yuji Nishibe, Kota Manabe, Nobuyuki Kitamura
  • Patent number: 5838154
    Abstract: A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element.
    Type: Grant
    Filed: March 14, 1996
    Date of Patent: November 17, 1998
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Takeshi Morikawa, Yuji Nishibe, Hideya Yamadera, Yutaka Nonomura, Masaharu Takeuchi, Jiro Sakata
  • Patent number: 5353636
    Abstract: A torque sensor which can detect instantaneous output torque of the engine is disposed on the output shaft of the engine, and the output signal thereof is frequency-analyzed to extract a half synchronous frequency component having a frequency equals to a half of the number of the revolutions of the engine per second and a synchronous frequency component having a frequency equals to the number of the revolutions of the engine per second, the electronic control unit (ECU) of the engine determines the misfiring mode of the engine including the number of the misfiring cylinders and the interval thereof in the firing order of the engine based on the amplitude of the frequency components and the waveform thereof, then the ECU determines the misfiring cylinders based on the determined misfiring mode and the phase angle of the frequency components of the torque sensor relative to a reference crank angle signal.
    Type: Grant
    Filed: July 21, 1993
    Date of Patent: October 11, 1994
    Assignees: Toyota Jidosha Kabushiki Kaisha, Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Kazuhiro Sakurai, Yutaka Obuchi, Yuji Nishibe, Yutaka Nonomura, Kouji Tsukada, Masaharu Takeuchi, Masanori Miyashita
  • Patent number: 5062062
    Abstract: A physical quantity detecting apparatus for detecting a physical quantity of an object of measurement. The position of movement of an object of measurement is divided into a given number of segments in advance. The output of a physical quantity sensor for detecting a physical quantity of the object of measurement is calculated on the basis of a correction operation expression which has an independent coefficient group for each segment so as to correct the offset component and the sensitivity. Thus, a physical quantity such as a transmitted torque is detected with high accuracy at real time without being influenced by the fluctuations of the offset output and the sensitivity depending on the position of rotation. The correction operation may also be performed using the temperature dependence function of the offset signal and the temperature dependence function of the sensitivity, thereby enabling the accurate measurement of the physical quantity without the influence of the temperature change.
    Type: Grant
    Filed: December 29, 1989
    Date of Patent: October 29, 1991
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Yuji Nishibe, Yutaka Nonomura, Masaaki Abe, Masaharu Takeuchi, Kouji Tsukada
  • Patent number: 4811609
    Abstract: A torque detecting apparatus for measuring the amount of magnetostriction of a rotary magnetic material which transmits torque by means of a magnetic sensor, and detecting the transmitted torque on the basis of the measured amount of magnetostriction. The apparatus comprises a magnetic sensor for measuring the amount of magnetostriction of the rotary magnetic material, a demagnetization coil which is opposed to the rotary magnetic material so as to restore the rotary magnetic material magnetized by a disturbing magnetic field to the state of zero magnetization, a demagnetization circuit for applying an oscillating current to the demagnetization coil so as to generate in the rotary magnetic material a periodic damping oscillating magnetic field having the maximum value larger than the coercive force of the rotary magnetic material; and a trigger circuit for outputting a drive timing signal for the demagnetization circuit.
    Type: Grant
    Filed: May 11, 1988
    Date of Patent: March 14, 1989
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Yuji Nishibe, Yutaka Nonomura, Masaharu Takeuchi
  • Patent number: 4803885
    Abstract: A torque measuring apparatus including a magnetic detection device for non-contact measuring strains in a rotating shaft of ferromagnetic material which is adapted to transmit torques, the detected strains being used to determine the levels of transmitted torques, the magnetic detection device including an exciting coil device wound around the outer periphery of the rotating shaft and adapted to magnetize the rotating shaft in its axial direction; a detecting core ring device in the form of an integral unit which includes a plurality of detecting cores arranged around the circumferential area of the rotating shaft to be magnetized equidistantly to form a ring, each of the detecting cores forming an independent magnetic circuit between the detecting core and the rotating shaft; and at least one magnetic detecting element for detecting a variable magnetic flux in each of the detecting cores depending on the level of the transmitted torque; whereby the strains in the rotating shaft can be non-contact measured ba
    Type: Grant
    Filed: April 17, 1987
    Date of Patent: February 14, 1989
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Yutaka Nonomura, Kouji Tsukada, Yuji Nishibe, Masaharu Takeuchi