Abstract: A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

Abstract: The present invention is directed to a mobile X-ray apparatus having a main unit, a moving carriage for installing the main unit, a column standing on the moving carriage, an X-ray generator supported by the column, and an image reader for reading X-ray image information from an imaging plate in which the X-ray image information is stored. The X-ray apparatus is provided with a brake for putting a brake on the moving carriage, a brake control means for applying the brake or releasing the brake, a read control means for prohibiting reading by the image reader, while the brake control means releases the brake, a cassette loading slot for inserting a cassette enclosing the imaging plate into the image reader, a blocking member for closing at least a part of the cassette loading slot to block the cassette to be inserted, and an open and close control means for closing the blocking member to prevent insertion of the cassette while the read control means prohibits reading.

Abstract: A mobile X-ray apparatus including a main body portion, a mobile dolly on which the main body portion is mounted, a support pole that is erectly provided on the mobile dolly, an X-ray generator supported on the support pole, and an image reading device for reading image information from an imaging plate in which X-ray image information is stored, and further including detecting means for detecting whether the mobile dolly is being moved, and reading control means for prohibiting reading of the image reading device when it is detected by the detecting means that the mobile dolly is being moved.

Abstract: A semiconductor module includes an upper arm and a lower arm of an inverter circuit. The upper arm has a switching element and a rectifying device and the lower arm has a switching element and a rectifying device. The upper arm and the lower arm are laminated such that the switching elements overlap each other and the rectifying devices overlap each other. Refrigerant flow paths constituting cooling sections respectively extend along both sides in the lamination direction of the switching elements and the rectifying devices and are folded back at the rectifying device lamination section side.

Abstract: A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

Abstract: A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n?1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

Abstract: A mobile X-ray apparatus including a main body portion, a mobile dolly on which the main body portion is mounted, a support pole that is erectly provided on the mobile dolly, an X-ray generator supported on the support pole, and an image reading device for reading image information from an imaging plate in which X-ray image information is stored, and further including detecting means for detecting whether the mobile dolly is being moved, and reading control means for prohibiting reading of the image reading device when it is detected by the detecting means that the mobile dolly is being moved.

Abstract: The present invention is directed to a mobile X-ray apparatus having a main unit, a moving carriage for installing the main unit, a column standing on the moving carriage, an X-ray generator supported by the column, and an image reader for reading X-ray image information from an imaging plate in which the X-ray image information is stored. The X-ray apparatus is provided with a brake for putting a brake on the moving carriage, a brake control means for applying the brake or releasing the brake, a read control means for prohibiting reading by the image reader, while the brake control means releases the brake, a cassette loading slot for inserting a cassette enclosing the imaging plate into the image reader, a blocking member for closing at least a part of the cassette loading slot to block the cassette to be inserted, and an open and close control means for closing the blocking member to prevent insertion of the cassette while the read control means prohibits reading.

Abstract: A leak fuel collection apparatus of the internal combustion engine using leak oil collection pipe fuel is provided, by which the improvement in fuel consumption and exhaust emission can be achieved by improving the combustion condition of the leak fuel mixed with fresh air in the cylinder in correspondence with the engine operating conditions. The leak oil collection pipe is connected to the intake air pipe of the engine, a leak pipe open/close valve is provided to the leak oil collection pipe for opening or closing the leak pipe, and the leak pipe open/close valve is opened when the engine load at an engine rotation speed exceeds a predetermined value determined for the rotation speed and is closed when the engine load at said rotation speed is equal to or lower than said predetermined value.

Abstract: A leak fuel collection apparatus of the internal combustion engine using leak oil collection pipe fuel is provided, by which the improvement in fuel consumption and exhaust emission can be achieved by improving the combustion condition of the leak fuel mixed with fresh air in the cylinder in correspondence with the engine operating conditions. The leak oil collection pipe is connected to the intake air pipe of the engine, a leak pipe open/close valve is provided to the leak oil collection pipe for opening or closing the leak pipe, and the leak pipe open/close valve is opened when the engine load at an engine rotation speed exceeds a predetermined value determined for the rotation speed and is closed when the engine load at said rotation speed is equal to or lower than said predetermined value.

Abstract: A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving as an opposite electrode for the capacitive element is formed above the insulating layer. The gate electrode is covered with a dielectric layer comprising silicon oxide, silicon nitride or tantalum oxide, and an electrode for the capacitive element comprising MoSix is provided above the dielectric layer. The resistance element section has a resistance element comprising MoSix formed simultaneously with the electrode for the capacitive element in the same process.

Abstract: A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving as an opposite electrode for the capacitive element is formed above the insulating layer. The gate electrode is covered with a dielectric layer comprising silicon oxide, silicon nitride or tantalum oxide, and an electrode for the capacitive element comprising MoSix is provided above the dielectric layer. The resistance element section has a resistance element comprising MoSix formed simultaneously with the electrode for the capacitive element in the same process.

Abstract: A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving as an opposite electrode for the capacitive element is formed above the insulating layer. The gate electrode is covered with a dielectric layer comprising silicon oxide, silicon nitride or tantalum oxide, and an electrode for the capacitive element comprising MoSix is provided above the dielectric layer. The resistance element section has a resistance element comprising MoSix formed simultaneously with the electrode for the capacitive element in the same process.

Abstract: A semiconductor device may have an insulating layer comprising a silicon oxide film or the like formed so as to cover an entire upper surface of a semiconductor substrate. A resistance element comprising MoSix is formed on the insulating layer. An insulating film is provided on the surface of the semiconductor substrate above the insulating layer. A through-hole is provided in the insulating film located above the resistance element, and an electrode provided above the insulating film is electrically connected to the resistance element through this through-hole.

Abstract: An infrared sensing element of the present invention includes a base including a thin film portion and a thick wall portion arranged around the thin film portion, and a thermopile including a plurality of thermocouples connected in series so that cold junctions are located on the thick wall portion and hot junctions are located on the thin film portion, wherein a thermosensitive portion is provided in contact with the thick wall portion so that a reference temperature with high accuracy can be used for determining temperature based on output from the thermopile. A PN junction formed on a semiconductor substrate serves as the thermosensitive portion, and it is used to provide for a compact infrared sensing element with high performance at low cost.

Abstract: An infrared sensing element of the present invention includes a base including a thin film portion and a thick wall portion arranged around the thin film portion, and a thermopile including a plurality of thermocouples connected in series so that cold junctions are located on the thick wall portion and hot junctions are located on the thin film portion, wherein a thermosensitive portion is provided in contact with the thick wall portion so that a reference temperature with high accuracy can be used for determining temperature based on output from the thermopile. A PN junction formed on a semiconductor substrate serves as the thermosensitive portion, and it is used to provide for a compact infrared sensing element with high performance at low cost.

Abstract: A semiconductor device in certain embodiments includes an insulating layer provided above the upper surface of a semiconductor substrate, and a capacitive element section and a resistance element section formed above the insulating layer. In the capacitive element section, a gate electrode serving as an opposite electrode for the capacitive element is formed above the insulating layer. The gate electrode is covered with a dielectric layer comprising silicon oxide, silicon nitride or tantalum oxide, and an electrode for the capacitive element comprising MoSix is provided above the dielectric layer. The resistance element section has a resistance element comprising MoSix formed simultaneously with the electrode for the capacitive element in the same process.