Abstract: A field effect transistor comprises a carrier transit layer in a stacked layer structure provided with a plurality of nitride semiconductor layers, a gate electrode provided on the stacked layer structure and a source electrode and a drain electrode placing the gate electrode in between.

Abstract: A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer, formed on the first semiconductor layer are a gate electrode 36 and a source electrode 35, formed on the second semiconductor layer is a drain electrode 37, and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain's breakdown voltage to be increased in the FET, because the gate electrode 36 and the drain electrode 37 are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.

Abstract: A field effect transistor comprises a carrier transit layer in a stacked layer structure provided with a plurality of nitride semiconductor layers, a gate electrode provided on the stacked layer structure and a source electrode and a drain electrode placing the gate electrode in between.

Abstract: A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer, formed on the first semiconductor layer are a gate electrode 36 and a source electrode 35, formed on the second semiconductor layer is a drain electrode 37, and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain's breakdown voltage to be increased in the FET, because the gate electrode 36 and the drain electrode 37 are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.

Abstract: A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer, formed on the first semiconductor layer are a gate electrode 36 and a source electrode 35, formed on the second semiconductor layer is a drain electrode 37, and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain's breakdown voltage to be increased in the FET, because the gate electrode 36 and the drain electrode 37 are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.

Abstract: An FET includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The first and second semiconductor layers are made of a Group III-V compound semiconductor layer, formed on the first semiconductor layer are a gate electrode 36 and a source electrode 35, formed on the second semiconductor layer is a drain electrode 37, and the drain electrode and the gate electrode are formed respectively on opposing planes of a semiconductor structure which contains the first and second semiconductor layers. This arrangement enables a drain's breakdown voltage to be increased in the FET, because the gate electrode 36 and the drain electrode 37 are respectively disposed, in a spatial separation of each other, on different planes instead of the same plane of the semiconductor structure.