Abstract: The present invention relates to a pressure-sensitive adhesive sheet, which includes a pressure-sensitive adhesive film including a base material layer and a pressure-sensitive adhesive layer disposed on at least one side of the base material layer, in which the base material layer includes a soft vinyl chloride resin and contains at least one compound selected from the group consisting of a fatty acid compound, an aliphatic metal salt and a phosphoric acid ester; and a release film including a liner base material and a release layer, in which a surface of the release layer in the release film has a surface free energy of 20 dyn/cm or more but less than 30 dyn/cm, in which the release film and the pressure-sensitive adhesive film are laminated in such a way that the release layer side of the release film is in contact with a surface of the pressure-sensitive adhesive layer.

Abstract: The present invention relates to a pressure-sensitive adhesive tape or sheet for dicing which is to be applied to an active surface in the state of being not wholly covered with a native oxide film. The adhesive tape or sheet includes a substrate, and a radiation-curable pressure-sensitive adhesive layer disposed on at least one side of the substrate, in which the pressure-sensitive adhesive layer contains an acrylic polymer (A) having a weight-average molecular weight of 500,000 or higher and at least one radiation-polymerizable compound (B) selected from cyanurate compounds having one or more groups containing a carbon-carbon double bond and isocyanurate compounds having one or more groups containing a carbon-carbon double bond, and the ratio of the radiation-polymerizable compound (B) with respect to 100 parts by weight of the acrylic polymer (A) is 5 to 150 parts by weight.

Abstract: Provided is a treatment method of a semiconductor wafer facilitating picking-up of semiconductor chips and preventing contamination by a dicing sheet. A wafer back surface treating method is characterized in that a ground or polished surface of a semiconductor wafer activated in a grinding or polishing step, with semiconductor circuits formed thereon, is deactivated. In the method, the activation treatment with an oxidizing agent is preferable. Furthermore, the activation treatment is preferably implemented with blowing of ozone to a ground or polished surface of a wafer, with ozone water or with illumination of a ground or polished surface of a wafer with ultraviolet (UV). It is preferable to adhere a dicing sheet after the deactivation treatment.

Abstract: An ultraviolet irradiating apparatus for emitting ultraviolet light toward a work piece. The work piece, e.g. a semiconductor wafer, is held by a ring-shaped frame through an ultraviolet sensitive adhesive tape applied to the back surface of the wafer. The apparatus includes an ultraviolet irradiating section having a regulating member disposed in a lower position of a support base. The regulating member is provided to limit a downward displacement of the wafer.

Abstract: It is an object of the invention to present an adhesive sheet for laser dicing capable of dicing the workpiece into individual small pieces of element securely at high production efficiency when forming a reformed region inside the workpiece by light absorption ablation of laser beam, and its manufacturing method. It is also an object of the invention to present a method of manufacturing small pieces of element securely at high production efficiency by using this adhesive sheet for laser dicing.

Abstract: Provided is a treatment method of a semiconductor wafer facilitating picking-up of semiconductor chips and preventing contamination by a dicing sheet. A wafer back surface treating method is characterized in that a ground or polished surface of a semiconductor wafer activated in a grinding or polishing step, with semiconductor circuits formed thereon, is deactivated. In the method, the activation treatment with an oxidizing agent is preferable. Furthermore, the activation treatment is preferably implemented with blowing of ozone to a ground or polished surface of a wafer, with ozone water or with illumination of a ground or polished surface of a wafer with ultraviolet (UV). It is preferable to adhere a dicing sheet after the deactivation treatment.

Abstract: An ultraviolet irradiating apparatus for emitting ultraviolet light toward a work piece. The work piece, e.g. a semiconductor wafer, is held by a ring-shaped frame through an ultraviolet sensitive adhesive tape applied to the back surface of the wafer. The apparatus includes an ultraviolet irradiating section having a regulating member disposed in a lower position of a support base. The regulating member is provided to limit a downward displacement of the wafer.

Abstract: This invention relates to a method of forming a polymer chain of a desired length in a thin film comprising a monomer having a multiple bond in a desired position. This invention is a method of polymerizing a monomer to form the polymer chain by applying a pulse voltage to the thin film comprising the monomer having a multiple bond in a desired position. The polymer chain may be polymerized to a desired length in a desired position. The pulse voltage, may be applied using the probe of a scanning tunnel microscope. The length of the monomer may be controlled using a defect formed on the above-mentioned thin film as an end point of the polymer chain.

Abstract: An object is to peel off a disused resist from an article, e.g., a silicon wafer, with an adhesive sheet while preventing impurities contained in the adhesive sheet from transferring to the surface of the article, e.g., wafer, and from thus arousing electrical troubles resulting in problems such as decreases in the yield and reliability of the article. A method for resist removal comprising forming an adhesive layer on an article on which a resist is present and peeling the adhesive layer as a united sheet including the resist material from the article, characterized in that the adhesive layer has been regulated so as to have a modulus of elasticity of 1 Kg/mm.sup.2 or higher in the peeling, and an adhesive or an adhesive sheet both for use in the method.

Abstract: A method for producing a semiconductor element, comprising treating a lead frame or a semiconductor wafer or a semiconductor chip, or a lead frame and a semiconductor chip in combination, with at least one package crack-preventing compound selected from compounds having a reactive group, acids, derivatives at a group due to which said acid assumes acidity, siloxane derivatives of the formula (I) ##STR1## and compounds having a number average molecular weight of not more than 10,000 and comprising, in their structure, said siloxane derivative; and an adhesive for adhering a wafer, which is usable in said production method. According to the method, package cracks can be significantly prevented.