Abstract: A semiconductor device includes a semiconductor chip which has a main surface and a main transistor which includes a first system transistor and a second system transistor that are each formed in the main surface so as to be individually controlled, in which the first system transistor includes a first composite cell which is constituted of an ?-number (??2) of first unit transistors that are arrayed so as to be mutually adjacent to the main surface and that each have a first trench structure including a first electrode embedded in a first trench formed in the main surface, and the second system transistor includes a second composite cell which is arranged so as to be adjacent to the first composite cell and constituted of a ?-number (??2) of second unit transistors that are arrayed so as to be mutually adjacent to the main surface and that each have a second trench structure including a second electrode embedded in a second trench formed in the main surface.

Abstract: A semiconductor device includes a main transistor which includes a first system transistor generating a first system current and a second system transistor generating a second system current independently of the first system transistor and which generates an output current including the first system current and the second system current, a first system monitor transistor which generates a first system monitor current that corresponds to the first system current, and a second system monitor transistor which generates a second system monitor current that corresponds to the second system current.

Abstract: A semiconductor device includes a semiconductor chip that has a main surface, and a field insulating film that partially covers the main surface and has an insulating side wall in which an inclined angle made with the main surface is not less than 20° and not more than 40°.

Abstract: A semiconductor device includes a substrate having a main surface, and a temperature-sensitive diode structure having a trench formed in the main surface, a polysilicon layer embedded in the trench, a p-type anode region formed in the polysilicon layer, and an n-type cathode region formed in the polysilicon layer.

Abstract: A semiconductor device includes a substrate having a main surface, and a temperature-sensitive diode structure having a trench formed in the main surface, a polysilicon layer embedded in the trench, a p-type anode region formed in the polysilicon layer, and an n-type cathode region formed in the polysilicon layer.

Abstract: A power management unit includes a part that transmits a first information data related to a first device for creating, consuming, or accumulating first energy and a second information data related to a second device for creating, consuming, or accumulating second energy to a server. The power management unit further includes a part that receives control data for controlling the first and second devices from the server, and a part that transmits the control data to the first device and the second device. Further, a power management method transmits the first information data and the second information data from the power management unit to the server. Furthermore, the power management method transmits control data for controlling the first device and the second device from the server to the power management unit, and transmits the control data from the power management unit to the first device and the second device.

Abstract: In a communication device, a ground plane disposed on the upper or lower surface of a board or inside the board includes a first ground region disposed on a semiconductor circuit and connected thereto, and a second ground region disposed under an amplifier and connected thereto. The first ground region and the second ground region do not overlap with each other.

Abstract: In a communication device, a ground plane disposed on the upper or lower surface of a board or inside the board includes a first ground region disposed on a semiconductor circuit and connected thereto, and a second ground region disposed under an amplifier-and connected thereto. The first ground region and the second ground region do not overlap with each other.

Abstract: A transmitter includes a board, an electronic circuit provided on the board for outputting a transmission signal, an amplifier provided on the board for amplifying the transmission signal, an antenna terminal provided on the board and arranged to be connected to an antenna, and a transmission path arranged along a border of the board. The transmission path is connected to an output port of the amplifier and the antenna terminal. The transmission path supplies the amplified transmission signal to the antenna terminal. This transmitter prevents the transmitting signal from entering into other circuits, and thus, has preferable transmission characteristics.

Abstract: According to a transmitting output control circuit, one end of a coupling capacitor and one end of main line of a directional coupler are coupled with an output terminal of a power amplifier. A switch for coupling the other end of the coupling capacitor and one end of a sub line of the directional coupler with an anode of a first diode or a second terminating resistor is formed in a power amplifying apparatus. Any one of the coupling capacitor and the directional coupler is coupled by switching the switch. By using this structure, the stable transmitting power control circuit, which can be used in a wide dynamic range necessary for detecting a transmitting output signal level, can be provided.

Abstract: According to a transmitting output control circuit, one end of a coupling capacitor and one end of main line of a directional coupler are coupled with an output terminal of a power amplifier. A switch for coupling the other end of the coupling capacitor and one end of a sub line of the directional coupler with an anode of a first diode or a second terminating resistor is formed in a power amplifying apparatus. Any one of the coupling capacitor and the directional coupler is coupled by switching the switch. By using this structure, the stable transmitting power control circuit, which can be used in a wide dynamic range necessary for detecting a transmitting output signal level, can be provided.

Abstract: The high-frequency module of the present invention is formed of two sections: first high-frequency circuit 5 having a first filter circuit; and second high-frequency circuit 6 having a second filter circuit. At least any one of the two high-frequency circuits has a conductive case. The structure is highly effective in attenuating a spurious signal, thereby solving the problem that the output level of the spurious signal fed from the high-frequency module is undesirably increased.

Abstract: An antenna device has a first radiation plate and a second radiation plate of which a diameter or one side is about ½ wavelength in electrical length disposed on a ground plate at an arbitrary interval. A first power feed port and a second power feed port are provided on the first radiation plate and are disposed so that straight lines linking each power feed port position and a middle point of the first radiation plate may be orthogonal to each other. A third power feed port and a fourth power feed port are provided on the second radiation plate and are disposed so that straight lines linking each power feed port position and a middle point of the second radiation plate may be orthogonal to each other. The straight lines are disposed to have an angle of 45 degrees to a straight line linking the first power feed port position and the middle point of the first radiation plate and to a straight line linking the second power feed port position and the middle point of the first radiation plate.

Abstract: The high-frequency module of the present invention is formed of two sections: first high-frequency circuit 5 having a first filter circuit; and second high-frequency circuit 6 having a second filter circuit. At least any one of the two high-frequency circuits has a conductive case. The structure is highly effective in attenuating a spurious signal, thereby solving the problem that the output level of the spurious signal fed from the high-frequency module is undesirably increased.

Abstract: An antenna device of the invention has a configuration in which a first radiation plate and a second radiation plate of which diameter or one side is about ½ wavelength in electrical length are disposed on a ground plate at an arbitrary interval, a first power feed port and a second power feed port provided on the first radiation plate are disposed so that the straight lines linking each power feed port position and the middle point of the first radiation plate may be orthogonal to each other, a third power feed port and a fourth power feed port provided on the second radiation plate are disposed so that the straight lines linking each power feed port position and the middle point of the second radiation plate may be orthogonal to each other, and these straight lines are disposed to have an angle of 45 degrees to a straight line linking the first power feed port position and the middle point of the first radiation plate and to a straight line linking the second power feed port position and the middle p