Abstract: A method of manufacturing a semiconductor device may include, but is not limited to, the following processes. A conductive film is formed over a semiconductor substrate. First and second photo resist patterns are formed on the conductive film. A space is located between the first and second photo resist patterns. An insulating mask is formed by using catalytic reaction so as to cover surfaces of the first and second photo resist patterns. The insulating mask protects the surfaces of the first and second photo resist patterns. A part of the conductive film is etched by using the insulating mask on the first and second photo resist patterns as an etching mask.

Abstract: In an optical cable made by forming a sheath on enclosing one or more optical fiber cores and a tension member, high reliability is obtained through the avoidance of adverse effects on the optical fiber core of a curving tendency of the tension member prevailing over the resistance of the sheath to curving (for example, due to the installed optical cable being heated by electrical equipment in proximity) and the optical cable consequently curving. Taking the plane containing the curve formed by the tension member due to its curving tendency as a base plane, the optical fiber core is disposed in the proximity of the position of the image formed when the tension member is projected in a direction perpendicular with respect to the base plane onto a flat plane separate from and parallel with the base plane.