Abstract: A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Abstract: A gas management method includes: heating a raw material container that accommodates a raw material, by a heater, thereby generating a vaporized raw material gas; supplying the vaporized raw material gas together with a carrier gas to a processing container that accommodates a substrate, thereby performing a processing on the substrate; and controlling the heater based on a weight of the substrate after the processing on the substrate.

Abstract: A substrate processing method performed by a substrate processing apparatus including: a processing container that processes a substrate; a gas supply that supplies a gas into the processing container; an exhaust device that exhausts a gas from an inside of the processing container; and a gas analyzer that analyzes the gas passing through an exhaust pipe that connects the processing container and the exhaust device. The method includes: performing a processing with a processing gas in the processing container by supplying the processing gas into the processing container; purging the processing gas in the processing container by supplying a purge gas into the processing container; analyzing the processing gas passing through the exhaust pipe by the gas analyzer during the purging the processing gas; and determining a condition of the purging the processing gas based on a result of analyzing the processing gas.

Abstract: A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

Abstract: A film deposition apparatus includes a rotary cable disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

Abstract: A substrate processing apparatus includes a base member having an opening, a substrate holding member fixedly provided on the base member and configured to hold a plurality of substrates in multiple stages in a vertical direction, a plurality of shower plates provided to respectively face the substrates held by the substrate holding member and configured to supply a processing gas to the substrates existing thereunder in a shower shape, at least one gas introduction member configured to introduce the processing gas into the shower plates, a processing container provided to be able to make close contact with the base member and brought into close contact with the base member to define an arrangement space of the substrate holding member as a processing chamber, a heating device configured to heat the substrates in the processing chamber, and an exhaust mechanism configured to evacuate the processing chamber through the opening.