Abstract: At least one vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Rows of backside support pillar structures are formed through the at least one vertically alternating sequence. Memory stack structures are formed through the at least one vertically alternating sequence. A two-dimensional array of discrete backside trenches is formed through the at least one vertically alternating sequence. Contiguous combinations of a subset of the backside trenches and a subset of the backside support pillar structures divide the at least one vertically alternating sequence into alternating stacks of insulating layers and sacrificial material layers. The sacrificial material layers are replaced with electrically conductive layers while the backside support pillar structures provide structural support to the insulating layers.

Abstract: An analytical device includes: a reaction unit into which an ion derived from a sample component is introduced; a radical generation unit that generates a radical by vacuum discharge and comprises a raw material introduction chamber into which a plasma raw material is introduced; a connection part that introduces the radical generated in the radical generation unit into a vacuum chamber, the vacuum chamber having a pressure lower than a pressure of the raw material introduction chamber and being connected to the reaction unit; and a separation unit that separates a generated ion generated by a reaction with the radical introduced via the connection part into the reaction unit according to m/z and/or ion mobility, wherein an inner diameter of a cross section of the connection part is equal to or less than 20 millimeters.

Abstract: An analytical device includes: a reaction unit into which an ion derived from a sample component is introduced; a radical generation unit that generates a radical by vacuum discharge and comprises a raw material introduction chamber into which a plasma raw material is introduced; a connection part that introduces the radical generated in the radical generation unit into a vacuum chamber, the vacuum chamber having a pressure lower than a pressure of the raw material introduction chamber and being connected to the reaction unit; and a separation unit that separates a generated ion generated by a reaction with the radical introduced via the connection part into the reaction unit according to m/z and/or ion mobility, wherein an inner diameter of a cross section of the connection part is equal to or less than 20 millimeters.