Abstract: First electrically conductive lines, first pillar structures, second electrically conductive lines, second pillar structures, third electrically conductive lines, third pillar structures, fourth electrically conductive lines, and fourth pillar structures are formed over a substrate. Each pillar structure includes a memory element. Interconnection structures are formed on the first electrically conductive lines. The first electrically conductive lines may have thinned segments located outside the area of the arrays of memory elements, and the interconnection structures may be formed on the thinned segments. Alternatively or additionally, the interconnection structures may include a vertical stack of a first conductive via structure contacting a respective one of the first electrically conductive lines, a conductive pad structure, and a second conductive via structure.

Abstract: A vertically alternating sequence of insulating layers and sacrificial material layers is formed over a substrate. Line trenches extending along a first horizontal direction are formed through the vertically alternating sequence. The vertically alternating sequence is divided into vertically alternating stacks of insulating strips and sacrificial material strips. Laterally alternating sequences of memory opening fill structures and dielectric pillar structures are formed within the line trenches. Each of the memory opening fill structures includes a respective vertical bit line and memory material portion located between each laterally neighboring pair of the sacrificial material strip and the vertical bit line.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings are formed through the alternating stack. Protruding tip portions are formed on each of the sacrificial material layers around the memory openings. A plurality of insulating spacers is formed within each memory opening between each vertically neighboring pair of tip portions of the sacrificial material layers. A phase change memory material and a vertical bit line are formed within each of the memory openings. The phase change memory material can be formed as a vertical stack of discrete annular phase change memory material portions, or can be formed as a continuous phase change memory material layer. Each of the sacrificial material layer can be replaced by an electrically conductive layer.

Abstract: First elongated loop-shaped conductive material portions are formed over a substrate. A two-dimensional array of memory pillar structures is formed over the first elongated loop-shaped conductive material portions. Second elongated loop-shaped conductive material portions over the two-dimensional array of memory pillar structures. Each of the elongated loop-shaped conductive material potions includes a respective pair of line segments and a respective pair of end segments adjoined to ends of the respective pair of line segments. A moat trench that at least partially laterally encloses the two-dimensional array of memory pillar structures can be formed by performing an anisotropic etch process that removes parts of the first and second elongated loop-shaped conductive material portions, thereby separating each loop-shaped conductive material portion into two disjoined line segments.

Abstract: An object detection device includes a map generator configured to generate, based on a distance image that includes distance information for each coordinate, a first map in which the coordinate in a horizontal direction of the distance image is associated with the distance information, and a second map in which the coordinate in the horizontal direction of the distance image is associated with the distance information, the second map having a lower resolution than the first map; and an object detector configured to detect an object based on the first map when a distance represented by the distance information is within a first range, and to detect an object based on the second map when a distance represented by the distance information is within a second range.

Abstract: First electrically conductive lines, first pillar structures, second electrically conductive lines, second pillar structures, third electrically conductive lines, third pillar structures, fourth electrically conductive lines, and fourth pillar structures are formed over a substrate. Each pillar structure includes a memory element. Interconnection structures are formed on the first electrically conductive lines. The first electrically conductive lines may have thinned segments located outside the area of the arrays of memory elements, and the interconnection structures may be formed on the thinned segments. Alternatively or additionally, the interconnection structures may include a vertical stack of a first conductive via structure contacting a respective one of the first electrically conductive lines, a conductive pad structure, and a second conductive via structure.

Abstract: First electrically conductive lines, first pillar structures, second electrically conductive lines, second pillar structures, third electrically conductive lines, third pillar structures, fourth electrically conductive lines, and fourth pillar structures are formed over a substrate. Each pillar structure includes a memory element. Interconnection structures are formed on the first electrically conductive lines. The first electrically conductive lines may have thinned segments located outside the area of the arrays of memory elements, and the interconnection structures may be formed on the thinned segments. Alternatively or additionally, the interconnection structures may include a vertical stack of a first conductive via structure contacting a respective one of the first electrically conductive lines, a conductive pad structure, and a second conductive via structure.

Abstract: An electronic equipment assembly apparatus installs a mounted portion of a cable onto a connector of electronic equipment, the cable including a belt-shaped cable main body portion in which the mounted portion is formed in one end portion, and a reinforcing plate bonded to the one end portion side on one surface of the cable main body portion. The electronic equipment assembly apparatus includes: a cable holding tool which nips and holds the reinforcing plate by a blade and a chuck block; and a robot portion which moves the cable holding tool.

Abstract: A steering system that is telescopically extendable and retractable using a motor driving force includes a motor, a telescopic steering shaft, a tube that supports the steering shaft such that the steering shaft is rotatable and that is movable with telescopic movement of the steering shaft, an energy absorbing member connected to the tube, and a movable member connected to the energy absorbing member and configured to move the tube by being moved by a driving force of the motor. The energy absorbing member has a stiffness that moves the tube by transmitting the driving force of the motor from the movable member to the tube. The energy absorbing member is deformable to absorb impact energy that is applied to the energy absorbing member through the steering shaft and the tube during a secondary collision.

Abstract: There is provided an electronic equipment assembly apparatus including: a cable mounting mechanism which holds a cable and installs the cable onto a connector; a lock operation mechanism which operates a lock mechanism provided in the connector; a locked-state checker which checks a state of the lock mechanism of the connector; and a controller which controls the cable mounting mechanism and the lock operation mechanism.

Abstract: A memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, where the first conductive rails include a fill portion, and a first cobalt-containing cap liner contacting a top surface of the fill portion, a rectangular array of first memory pillar structures overlying top surfaces of the first conductive rails, where each first memory pillar structure includes a respective first resistive memory element, and second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of first memory pillar structures.

Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.

Abstract: A solar cell module which exhibits high output while ensuring connection strength between solar cells; and a solar cell suitable for the solar cell module. In the solar cell, a region on a first surface and at a first edge of a substrate that is not covered by a p-type transparent oxide electrode layer is defined as a “region A,” and a region on the first surface and at a second edge opposite to the first edge of the substrate and not covered by the p-type transparent oxide electrode layer is defined as a “region B.” The area of the region A is larger than the area of the region B.

Abstract: An absorbent article has a planar direction and a thickness direction. The absorbent article includes a volatile first functional component, a volatile second functional component, water-disintegrable microcapsules that contain the second functional component, and a solvent that keeps the second functional component contained inside the microcapsules. Between a liquid-permeable layer and an absorption layer, the absorbent article has functional composition coated regions that extend in the planar direction and that are coated with the functional composition, and has adhesive coated regions that extend in the planar direction and that are coated with an adhesive. The adhesive coated regions have an adhesive region that directly or indirectly joins the liquid-permeable payer and the absorption layer.

Abstract: The present invention provides an ophthalmic composition and a use thereof. In one embodiment of the present invention, an ophthalmic composition containing a clathrated antioxidant substance is provided. In some of embodiments of the present invention, a composition for treating or preventing an ophthalmic disease, an ophthalmic disorder or an ophthalmic symptom is provided, wherein the ophthalmic disease, the ophthalmic disorder or the ophthalmic symptom includes, but is not limited to, dry eye or a dry eye-like ophthalmic disease, conjunctivitis, corneal ulcer, age-related macular degeneration, cataract, pseudoexfoliation syndrome, and symptoms in these diseases which can be ameliorated by increasing the quantity of tears and/or goblet cells and/or mucin.

Abstract: A content reproduction system includes a content reproduction device that reproduces a content in a movable room, an input device that accepts operation by a user responsive to the content, and a sensor that detects a disturbance acting to disturb the operation. The content reproduction device provides assistance to the user in response to a result of the detection by the sensor during reproduction of the content while associating the assistance with the operation accepted by the input device.

Abstract: Disclosed is a transverse segment for a drive belt with a stack of rings and with a number of the transverse segments, which transverse segment includes a base part and two pillar parts that respectively extend from a respective axial side of the base part in radial outward direction, defining a central opening of the transverse segment between them, and that are each provided with a hook portion extending over a part of the central opening in the general direction of the respectively opposite pillar part. A width dimension of one of the pillar parts of the transverse segment is less than a width dimension of the respective other pillar part.

Abstract: A phase change memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, a rectangular array of memory pillar structures overlying top surfaces of the first conductive rails, and second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of memory pillar structures. Each memory pillar structure includes a vertical stack of structural elements including, from one end to another, a selector-side conductive element, a selector element, a selector-memory conductive element, a phase change memory element, and a memory-side conductive element. At least one structural element within the vertical stack is a laterally constricted structural element having laterally recessed sidewalls relative to sidewalls of a respective immediately vertically underlying structural element.

Abstract: Terminal crimping device and terminal crimping method is provided that collectively crimp-connects a terminal to an electric wire while suppressing displacement of the terminal at a crimp position. A terminal crimping device includes a cutting part configured to cut from the carrier each of the two or more terminals belonging to one terminal set at one end side in the terminal coupled body; a terminal conveyance part configured to convey the two or more terminals cut at the cutting part to a crimp position corresponding to the predetermined interval while adjusting a terminal interval of the two or more terminals to an arrangement interval of the covered electric wire at the crimp position in a conveyance direction (longitudinal direction) of the terminal coupled body; and a crimping part configured to collectively crimp-connect to the electric wire each of the two or more terminals conveyed to the crimp position.

Abstract: A device structure includes an array of semiconductor devices located in an array region over a substrate, metal lines laterally extending from the device region to a peripheral interconnection region, and interconnect via structures located in the peripheral interconnection region, and contacting a portion of a respective one of the plurality of metal lines. The metal lines include a first metal line and a second metal line each having a serpentine region which contacts a respective interconnect via structure.