Abstract: The provided power semiconductor module is configured to reduce the wiring inductance and save space on the substrate by establishing a multi-parallel connection between multiple power semiconductor chips. It consists of a first and second insulated substrates with a plurality of semiconductor switching elements positioned on one and facing the other. There are also first and second spacer conductors positioned between the plurality of semiconductor switching elements and the second insulated substrate. Inter-spacer-conductor wiring parts are connected with the plurality of second spacer conductors.

Abstract: To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.

Abstract: The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.

Abstract: There is provided a power semiconductor module with multiple semiconductor chips arranged in parallel on an insulated substrate, allowing for high density mounting of semiconductor chips and highly reliable with less difference in operating characteristics from one semiconductor chip to another. The above module includes an insulated substrate; a first conductive pattern laid out on the insulated substrate; multiple power semiconductor chips arranged on the first conductive pattern; a first wiring formed to bridge and directly connecting respective gate electrodes of the power semiconductor chips; and a second wiring formed to bridge and directly connecting respective source electrodes of the power semiconductor chips, wherein the first wiring is placed alongside of the second wiring and may be angled within 30 degrees with respect to the second wiring.

Abstract: The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.

Abstract: To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.

Abstract: An insulated gate type semiconductor device has a gate electrode which controls current flow between two regions of the same conductivity type in a semiconductor substrate. A main electrode has a first portion contacting a first one of the two regions, a second portion extending above the gate electrode and a third portion providing a raised external contact surface to contact an external electrode. The gate electrode is insulated above and below by insulating films. To prevent damage to the gate electrode and the lower insulating films due to the pressure of the external electrode, there is a supporting insulating layer on the surface of the substrate underlying the contact portion of the main electrode and having a thickness substantially greater than the thickness of the insulating film below the gate electrode and the contact surface is more remote from the substrate than the second portion of said main electrode.

Abstract: A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.