Abstract: A relative position determining apparatus according to the present invention includes: a first trajectory information obtaining unit obtaining first trajectory information that is a set of first trajectory points indicating positions that a first moving object has passed; a second trajectory information obtaining unit obtaining second trajectory information that is a set of second trajectory points indicating positions that a second moving object has passed; a map information obtaining unit obtaining map information including lane shape information indicating a shape of each lane; a matching determining unit determining whether each of the first trajectory information and the second trajectory information matches the lane shape information; and a relative lane determining unit determining relative lanes of the first moving object and the second moving object, based on a result of the determination by the matching determining unit.

Abstract: There is a need to improve estimation accuracy of a failure estimation method or its failure estimation apparatus that performs failure estimation on a targeted instrument based on history information about several instruments mounted with the same type of semiconductor device as an instrument targeted at failure estimation. A failure estimation apparatus that includes a history information database storing history information about a plurality of instruments mounted with the same type of semiconductor device and performs failure estimation on a targeted instrument mounted with a semiconductor device whose type equals the type, wherein the history information contains operation information and failure information; wherein the operation information indicates a chronological operating state of the semiconductor device mounted on the instruments; wherein the failure information indicates a failure cause of a failed instrument; and wherein the operating state is categorized into a plurality of classifications.

Abstract: A semiconductor light-emitting device having a longitudinal direction, and able to smoothly incline luminance for the longitudinal direction is provided. The semiconductor light-emitting device comprises a substrate and a plurality of semiconductor light-emitting layers of a predetermined shape disposed in a row on the substrate. The semiconductor light-emitting layers have such a structure that light emission amount of light-emitting surface of each semiconductor light-emitting layer inclines from a side of one predetermined end toward a side of the other end for the direction of the row.

Abstract: A method of detecting a fault of a semiconductor device including a power device mounted on a metal base and a drive circuit for driving the power device, the method detecting a fault of the semiconductor device beforehand based on an increase in thermal resistance between the metal base and the power device. A state of the power device is measured immediately before and after the power device is driven by the drive circuit. A temperature difference of the power device before and after driving is calculated according to the result of measurement. An increase in thermal resistance between the metal base and the power device is detected based on the temperature difference and an amount of electricity inputted to the power device in the driving period, and a fault of the semiconductor device is detected beforehand according to the increase.

Abstract: A semiconductor light-emitting device having a longitudinal direction, and able to smoothly incline luminance for the longitudinal direction is provided. The semiconductor light-emitting device comprises a substrate and a plurality of semiconductor light-emitting layers of a predetermined shape disposed in a row on the substrate. The semiconductor light-emitting layers have such a structure that light emission amount of light-emitting surface of each semiconductor light-emitting layer inclines from a side of one predetermined end toward a side of the other end for the direction of the row.

Abstract: There is a need to improve estimation accuracy of a failure estimation method or its failure estimation apparatus that performs failure estimation on a targeted instrument based on history information about several instruments mounted with the same type of semiconductor device as an instrument targeted at failure estimation. A failure estimation apparatus that includes a history information database storing history information about a plurality of instruments mounted with the same type of semiconductor device and performs failure estimation on a targeted instrument mounted with a semiconductor device whose type equals the type, wherein the history information contains operation information and failure information; wherein the operation information indicates a chronological operating state of the semiconductor device mounted on the instruments; wherein the failure information indicates a failure cause of a failed instrument; and wherein the operating state is categorized into a plurality of classifications.

Abstract: An obtained margin is smaller than a margin to be kept for a fault period predicted by life prediction based on a power cycle test, extending a maintenance cycle for replacement and so on. A method of detecting a fault of a semiconductor device including a power device mounted on a metal base and a drive circuit for driving the power device, the method detecting a fault of the semiconductor device beforehand based on an increase in thermal resistance between the metal base and the power device. A state of the power device is measured immediately before and after the power device is driven by the drive circuit. A temperature difference of the power device before and after driving is calculated according to the result of measurement.

Abstract: A voltage regulator has a voltage converter circuit and a control unit. The control unit controls the voltage converter circuit so that an output voltage attains a target voltage when the voltage regulator is in a no-load condition so as to have a transition characteristic in which the output voltage decreases with increase in the load current. The control unit calculates deviation between the output voltage and an ideal value thereof when a load condition of the voltage regulator is a first load condition, and corrects the target voltage by the output voltage adjustment unit. so The control unit also calculates deviation between rate of change of the output voltage with respect to the load current and an ideal value thereof, and corrects the transition characteristic so that the deviation becomes small to minimize deviation.

Abstract: This invention relates to a method for dispersing a suspension of solid particles into the colloidal state, which comprises charging grinding media and said dispersion into a vessel so that the volume ratio of the grinding media and the suspension is within a range of from 2/1 to 1/2 and agitating the suspension and the grinding media by rotating one agitation rod mounted on the tip end of an agitation shaft at the lower part of the central portion of the vessel so that the peripheral velocity of the tip of the agitation rod is within a range of from 6 to 20 m/sec. The invention also is directed to an apparatus for practicing this method.