Abstract: A charged particle radiation device wherein the position or the size of a FOV can be easily determined even if a number of measuring points are provided on a sample, and an image capturing condition determining method using the charged particle radiation device are provided. An image capturing condition determining method wherein the field of view of a charged particle radiation device is determined so as to include a plurality of measuring points, characterized in that whether or not the measuring points are overlapped with four sides of the field of view is judged; the field of view is moved so that the measuring points are moved to the inside or outside of the field of view; and the position of the field of view after being moved is determined as a position of the field of view of the charged particle radiation device, and a device to realize the method are proposed.

Abstract: A charged particle radiation device wherein the position or the size of a FOV can be easily determined even if a number of measuring points are provided on a sample, and an image capturing condition determining method using the charged particle radiation device are provided. An image capturing condition determining method wherein the field of view of a charged particle radiation device is determined so as to include a plurality of measuring points, characterized in that whether or not the measuring points are overlapped with four sides of the field of view is judged; the field of view is moved so that the measuring points are moved to the inside or outside of the field of view; and the position of the field of view after being moved is determined as a position of the field of view of the charged particle radiation device, and a device to realize the method are proposed.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

Abstract: An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.