Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: Provided is a light detecting device, including a first electrode and a third electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode and the third electrode, a second electrode formed on the photoelectric conversion layer, and an insulation film is disposed between the third electrode and the photoelectric conversion layer. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges.

Abstract: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

Abstract: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus which make it possible to improve pixel property. Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which contributes to control of discharge of charges or assist for transfer of charges. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: The present technology relates to a semiconductor device, a solid-state imaging device, an electronic apparatus, and a manufacturing method of the semiconductor device which can suppress generation of residual carriers within an organic film. The semiconductor device includes: a first electrode; a second electrode; and an organic film that is disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode is discontinuous. The organic film includes an inter-electrode region, which is a region interposed between the first electrode and the second electrode, and a non-inter-electrode region, which is a region not interposed between the first electrode and the second electrode, and the non-inter-electrode region is disposed between the adjacent inter-electrode regions. A suppression region, which is a region in which at least one of generation and movement of a carrier is suppressed, is present within the non-inter-electrode region.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus which make it possible to improve the pixel property. Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel (2PA, 2PB) and a second pixel (2X). The first and second pixels each have a first electrode (51A, 51B, 51C), a portion of a photoelectric conversion film (81), and a portion of a second electrode (82), where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode (51A, 51B) of the first pixel has a first area, while the first electrode (51C) of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film (52A, 52B). Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as dis closed can include a first pixel (2PA, 2PB) and a second pixel (2X). The first and second pixels each have a first electrode (51A, 51B, 51C), a portion of a photoelectric conversion film (81), and a portion of a second electrode (82), where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode (51A, 51B) of the first pixel has a first area, while the first electrode (51C) of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film (52A, 52B). Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: The present technology relates to a semiconductor device, a solid-state imaging device, an electronic apparatus, and a manufacturing method of the semiconductor device which can suppress generation of residual carriers within an organic film. The semiconductor device includes: a first electrode; a second electrode; and an organic film that is disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode is discontinuous. The organic film includes an inter-electrode region, which is a region interposed between the first electrode and the second electrode, and a non-inter-electrode region, which is a region not interposed between the first electrode and the second electrode, and the non-inter-electrode region is disposed between the adjacent inter-electrode regions. A suppression region, which is a region in which at least one of generation and movement of a carrier is suppressed, is present within the non-inter-electrode region.

Abstract: A method of manufacturing a shadow mask assembly, in which a shadow mask is fastened to a support frame in a tensioned state, includes applying a preliminary tension force with a magnitude of 9.8 to 490 N to the four corners of the shadow mask outwardly aslant with respect to sides of the shadow mask. A main tension force is then applied to each of at least a pair of mutually opposite sides of the shadow mask outwardly perpendicularly to the sides. Thereafter, the shadow mask to which the main tension forces have been applied is fastened to the frame side of the support frame.

Abstract: A shadow mask can be attached to a support frame in an accurate planer state without unevenness. Provided is a method for manufacturing a shadow mask assembly in which a shadow mask is fastened to a support frame in a tensioned state, the method including applying a preliminary tension force of an strength of 9.8 to 490 N to the four corners of the shadow mask outwardly aslant with respect to sides of the shadow mask, applying a main tension force to each of at least a pair of mutually opposite sides of the shadow mask outwardly perpendicularly to the sides, and thereafter fastening the shadow mask to which the main tension forces has been applied when the main tension forces are applied to the frame side of the support frame.

Abstract: A laser processing method is to be executed by a pair of turning mirrors of which axes of rotation are arranged in mutually twisted positions, a flat field lens for converging a laser beam reflected on the pair of turning mirrors on a specified plane, and an X-Y stage which carries and moves thereon an object to be processed to which the laser beam is applied, the object having a plurality of rectangular planar areas of the same shape as each other in a matrix form and adjoining the rectangular planar areas while not overlapping the rectangular planer area nor leaving any space therebetween.

Abstract: A laser processing apparatus includes a laser beam source, a focusing optical system for focusing a laser beam from the source as a processing laser beam to a surface of an article, an illuminating optical system using a laser beam of the same frequency as that of the processing laser beam as an illumination laser beam for illuminating the surface of the article, and a photographing device for detecting the illumination laser beam reflected from the article through the focusing optical system to thereby monitor a position to be processed. Since the laser beam of the illuminating optical system is of the same frequency as that of the processing beam chromatic aberration is prevented. This allows increased monitoring accuracy so that an article such as copper foil can be processed by a laser beam with an accuracy of 10 microns to monitor and correct a processing position.

Abstract: A laser processing method is carried out by a laser apparatus comprising: an oscillator; a spatial filter comprising a first convex lens, a member having a pinhole portion, and a second convex lens on an optical axis of the laser beam from an oscillator; two galvano-mirrors; and an f.theta. lens. The method includes: emitting a laser beam from the oscillator, focusing the laser beam by the first convex lens, removing non-focusing components in a peripheral portion of a focusing spot performed by the first convex lens by passing the laser beam which has passed through the first convex lens through the pinhole portion, a focal distance of the first convex lens being set so that a focusing diameter of the laser beam at the pinhole portion of the member is equal to or smaller than a focusing diameter of the laser beam which has passed through the f.theta.

Abstract: A laser optical device includes a laser oscillator, a beam shaping optical device for shaping a laser beam emitted from the oscillator to form a shaped laser beam, and a plurality of incidence lenses arranged to make the portions of the shaped laser beam incident on the incidence lenses equal. The device further includes beam transmitting optical fibers for receiving laser beams into which the laser beam passed through the incidence lenses is divided.