Abstract: In a ceramic sintered body, the Zr content is 17.5 mass %-23.5 mass % in terms of ZrO2, the Hf content is 0.3 mass %-0.5 mass % in terms of HfO2, the Al content is 74.3 mass %-80.9 mass % in terms of Al2O3, the Y content is 0.8 mass %-1.9 mass % in terms of Y2O3, the Mg content is 0.1 mass %-0.8 mass % in terms of MgO, the Si content is 0.1 mass %- and 1.5 mass % in terms of SiO2, and the Ca content is 0.03 mass %-0.35 mass % in terms of CaO. The total content of Na and K is 0.01 mass %-0.10 mass %, when the K content is converted to K2O and the Na content is converted to Na2O. The balance content is 0.05 mass % or less in terms of oxide.

Abstract: An amorphous dielectric includes a compound represented by A1+?BOxNy. ?0.3???0.3, 0<x?3.50, 0?y?1.00, and 6.70?2x+3y?7.30 are satisfied. A sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30.

Abstract: A piezoelectric composition containing: a complex oxide having a perovskite structure represented by a general formula of ABO3; copper; and one or more elements selected from the group consisting of chromium, nickel and zinc, in which in ABO3, an A-site element is potassium and a B-site element is niobium, or niobium and tantalum, with respect to 1 mol of the complex oxide, a content ratio of the copper is ? mol % in terms of CuO, a content ratio of one or more elements selected from the group consisting of chromium, nickel and zinc is ? mol % in terms of CrO3/2, NiO, ZnO, ? satisfies a relationship of 0.2???2.5, and ? satisfies a relationship of 0.2???2.0.

Abstract: In a ceramic sintered body, the Zr content is 17.5 mass %-23.5 mass % in terms of ZrO2, the Hf content is 0.3 mass %-0.5 mass % in terms of HfO2, the Al content is 74.3 mass %-80.9 mass % in terms of Al2O3, the Y content is 0.8 mass %-1.9 mass % in terms of Y2O3, the Mg content is 0.1 mass %-0.8 mass % in terms of MgO, the Si content is 0.1 mass %- and 1.5 mass % in terms of SiO2, and the Ca content is 0.03 mass %-0.35 mass % in terms of CaO. The total content of Na and K is 0.01 mass %-0.10 mass %, when the K content is converted to K2O and the Na content is converted to Na2O. The balance content is 0.05 mass % or less in terms of oxide.

Abstract: The ceramic sintered body contains Zr, Al, Y, and Mg. A Zr content is 7.5 mass % or more and 23.5 mass % or less in terms of ZrO2. An Al content is 74.9 mass % or more and 91.8 mass % or less in terms of Al2O3. A Y content is 0.41 mass % or more and 1.58 mass % or less in terms of Y2O3. A Mg content is 0.10 mass % or more and 0.80 mass % or less in terms of MgO. A ZrO2 crystal phase as a crystal phase has a monoclinic phase and a tetragonal phase as crystal structures. When a thermal aging treatment is performed for 100 hours in an environment of 180 degrees C., a ratio of a peak intensity of the monoclinic phase to a sum of peak intensities of the monoclinic phase and the tetragonal phase is 15% or less in the X-ray diffraction pattern.

Abstract: A substrate includes a ceramic sintered body, a first circuit plate and a second circuit plate. The ceramic sintered body contains Al, Zr, Y and Mg. In the ceramic sintered body, the Mg content in terms of MgO is S1 mass % and the Zr content in terms of ZrO2 is S2 mass %, a following formula (1) is established. When a thickness of the first circuit plate is T1 mm, a thickness of the second circuit plate is T2 mm, and a thickness of the ceramic sintered body is T3 mm, following formulas (2), (3), and (4) are established. Formula (1): ?0.004×S2+0.171<S1<?0.032×S2+1.427; Formula (2): 1.7<(T1+T2)/T3<3.5; Formula (3): T1?T2; and Formula (4): T3?0.25.

Abstract: A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+?BOx+?Ny wherein ? is larger than zero and 0.300 or less, x+? is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

Abstract: A piezoelectric composition containing: a complex oxide having a perovskite structure represented by a general formula of ABO3; copper; and one or more elements selected from the group consisting of chromium, nickel and zinc, in which in ABO3, an A-site element is potassium and a B-site element is niobium, or niobium and tantalum, with respect to 1 mol of the complex oxide, a content ratio of the copper is ? mol % in terms of CuO, a content ratio of one or more elements selected from the group consisting of chromium, nickel and zinc is ? mol % in terms of CrO3/2, NiO, ZnO, ? satisfies a relationship of 0.2???2.5, and ? satisfies a relationship of 0.2???2.0.

Abstract: A phosphor includes a high concentration region and at least one of low concentration regions lower in concentration of an additive than the high concentration region. The high concentration region surrounds at least one of low concentration regions.

Abstract: A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

Abstract: To provide a permanent magnet which uses Ce of an abundant resource and has a great magnetic anisotropy in rare earth permanent magnets. To obtain a permanent magnet having a high magnetic anisotropy due to the trivalent Ce state by setting the abundance ratio C3/(C3+C4) in the main phase grains to be 0.1?C3/(C3+C4)?0.5 where C3 denotes the number of trivalent Ce atoms and C4 denotes the number of tetravalent Ce atoms.

Abstract: A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)1-xM(2)x)(M(3)1-yM(4)y)(O1-zNz)3. 0?x?1, 0?y?1, and 0<z<? are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4a site atoms, and four 8h site atoms. The center atom is M(3) or M(4). The 4a site atom is O atom or N atom. The 8h site atom is O atom or N atom. An angle ? formed between a straight line connecting two 4a site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.5°???12°.

Abstract: A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+?BOx+?Ny wherein ? is larger than zero and 0.300 or less, x+? is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

Abstract: A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

Abstract: A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)1-xM(2)x)(M(3)1-yM(4)y)(O1-zNz)3. 0?x?1, 0?y?1, and 0<z<1/3 are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4a site atoms, and four 8h site atoms. The center atom is M(3) or M(4). The 4a site atom is O atom or N atom. The 8h site atom is O atom or N atom. An angle ? formed between a straight line connecting two 4a site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.5°???12°.

Abstract: A R-T-B based permanent magnet which not only has equivalent magnetic properties as the existing Nd—Fe—B based permanent magnet as well as light mass but also can be suitably used as a magnet for field system of a permanent magnet synchronous rotating machine. The magnet can be obtained in a case where the composition of the compound for forming the main phase is (R1-x(Y1-zLaz)x)2T14B (R is rare earth element(s) consisting of one or more elements of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, T is one or more transition metal elements with Fe or Fe and Co as essential elements, 0.0<x?0.5 and 0.0<z?0.5), by making the abundance ratio of Y4f/(Y4f+Y4g) satisfies 0.8?Y4f/(Y4f+Y4g)?1.0 when the Y occupying the 4f site of the tetragonal R2T14B structure is denoted as Y4f and the Y occupying the 4g site is denoted as Y4g.

Abstract: To provide a permanent magnet which uses Ce of an abundant resource and has a great magnetic anisotropy in rare earth permanent magnets. To obtain a permanent magnet having a high magnetic anisotropy due to the trivalent Ce state by setting the abundance ratio C3/(C3+C4) in the main phase grains to be 0.1?C3/(C3+C4)?0.5 where C3 denotes the number of trivalent Ce atoms and C4 denotes the number of tetravalent Ce atoms.

Abstract: A R-T-B based permanent magnet which not only has equivalent magnetic properties as the existing Nd—Fe—B based permanent magnet as well as light mass but also can be suitably used as a magnet for field system of a permanent magnet synchronous rotating machine. The magnet can be obtained in a case where the composition of the compound for forming the main phase is (R1-x(Y1-zLaz)x)2T14B (R is rare earth element(s) consisting of one or more elements of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, T is one or more transition metal elements with Fe or Fe and Co as essential elements, 0.0<x?0.5 and 0.0<z?0.5), by making the abundance ratio of Y4f/(Y4f+Y4g) satisfies 0.8?Y4f/(Y4f+Y4g)?1.0 when the Y occupying the 4f site of the tetragonal R2T14B structure is denoted as Y4f and the Y occupying the 4g site is denoted as Y4g.

Abstract: An electronic authentication system includes a vehicle-side control unit that judges whether ID information of an electronic key is identical to vehicle-side ID information, an ignition switch unit that permits engine starting operation and handle unlocking operation on the basis of the identity of the ID information of the electronic key to the vehicle-side ID information, and an actuator that unlocks an opening and closing lid such as a accommodation box lid. These component members are attached and fixed to a leg shield (an inner leg shield) and modularized. These members are preassembled into the inner leg shield and modularized like this, whereby the assembling work into the vehicle becomes very easy and it is possible to make the assembling work efficient to a great extent.

Abstract: The dielectric ceramic composition comprising a main component including a compound satisfying a compositional formula of (SrxBa1-x)mTiO3 (“x” in said compositional formula is 0.159?“x”?0.238, and “m” is 0.997?“m”?1.011), and a subcomponent comprising 11 to 25 weight % of CaTiO3, 0.10 to 0.50 weight % of at least one oxide of element selected from the group consisting of Fe, Co, Ni, Cu, and Zn in terms of FeO3/2, CoO4/3, NiO, CuO, and ZnO, 0.590 to 1.940 mol % of an oxide of element “A” (A is Mn and/or Cr), and an oxide of element “D” where “D” is at least one element selected from a group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y; wherein a ratio (A/D) of the element “A” with respect to element “D” is 2.250 to 7.450. According to the present invention, the dielectric loss (tan ?) at the wide frequency range can be lowered while maintaining a good capacitance temperature characteristic and the specific permittivity, without including Pb and bismuth Bi.