Abstract: The present invention provides a non-aqueous electrolyte secondary battery that comprises a positive electrode sheet comprising a positive electrode active material layer, and a negative electrode sheet comprising a negative electrode active material layer. The positive electrode sheet and the negative electrode sheet are arranged such that the positive electrode active material layer and the negative electrode active material layer face each other. The negative electrode active material layer comprises a face-to-face region NF that faces the positive electrode active material layer and a non-face-to-face region NNF that does not face the positive electrode active material layer. The non-face-to-face region NNF includes a high density part NHD having a density higher than that of the region face-to-face NF.

Abstract: Provided is a positive electrode for nonaqueous electrolyte secondary batteries including a positive electrode mixture layer formed of a positive electrode mixture paste containing a positive electrode active material. The positive electrode active material has a particle diameter of 2 ?m or more and less than 7 ?m. The positive electrode mixture layer includes a first mixture layer in which a maximum diameter of pores formed between particles of the positive electrode active material is more than 1.0 ?m and 5.0 ?m or less, and a second mixture layer in which a maximum diameter of the pores is 1.0 ?m or less. The second mixture layer is arranged closer to the current collector than the first mixture layer. A ratio of a thickness of the first mixture layer to a thickness of the second mixture layer is more than 0.1 and 1.0 or less.

Abstract: This invention provides a lithium secondary battery that comprises a positive electrode comprising a positive electrode active material layer and a negative electrode comprising a negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are placed to face each other. The negative electrode active material layer has an area A comprising a non-positive-electrode-facing portion that does not face the positive electrode active material layer. The area A comprises a negative electrode active material, a hot-melt binder and a temperature-sensitive thickener. The hot-melt binder has a melting point and the temperature-sensitive thickener has a gelation temperature both in a range of 45° C. to 100° C.

Abstract: The present invention provides a sealed lithium secondary battery in which redox shuttle reactions of an aromatic compound that is an overcharge inhibitor are inhibited, and the aromatic compound decomposes appropriately, and a desired amount of gas can be generated more stably than in conventional instances, even in high-temperature environments. In the sealed lithium secondary battery (100), an electrode assembly (80) and an electrolyte are accommodated in a battery case (50) that is provided with a current interrupt device (30). The electrolyte comprises a compound that is capable of suppressing drops in viscosity of the electrolyte as a result of a rise in temperature in a temperature region up to 100° C., and an aromatic compound capable of generating hydrogen gas when a predetermined battery voltage is exceeded.

Abstract: Disclosed is a cylindrical battery including: a cylindrical wound electrode group including sheet-like positive and negative electrodes, and a separator interposed therebetween; a bottomed cylindrical battery case having an opening and accommodating the electrode group; and a sealing unit sealing the opening. The electrode group has, at its center portion, a cavity extending in the axis direction thereof. The sealing unit includes a terminal plate having a vent hole, and a valve plate made of an electrically conductive material. The valve plate includes first and second rupturable portions each configured to be ruptured by an increase in the internal pressure of the battery case. The first rupturable portion is provided so as to surround a first region of the valve plate facing the cavity. The second rupturable portion is provided so as to surround a second region of the valve plate. The second region includes the first region.

Abstract: A socket for electrical part mounted on the wiring substrate to accommodate an electrical part. The present invention comprises a socket body, a floating plate and a holding structure. The socket body has a contact pin unit comprising a unit body in which the plural contact pins are mounted. The floating plate is mounted on upper side of the unit body to accommodate the electrical part, and comprises through holes into which the upper side contact portions of contact pins are inserted. The holding structure holds the floating plate in a descended state when the socket for the electrical part is not yet mounted on the wiring substrate, and releases the holding state of floating plate and makes the floating plate to be capable of moving vertically under the state of being urged upward when the socket for the electrical part is mounted on the wiring substrate.

Abstract: Disclosed is a non-aqueous electrolyte secondary battery including: a spirally-wound electrode group including a continuous first electrode, a continuous second electrode, and a continuous separator interposed between the first electrode and the second electrode; and a non-aqueous electrolyte. The first electrode includes a sheet-like first current collector, and a first active material layer formed on a surface of the first current collector; and the second electrode includes a sheet-like second current collector, and a second active material layer formed on a surface of the second current collector. In the electrode group, the winding terminal end of the first electrode faces the second electrode on the further outer peripheral side, with the separator interposed therebetween. The facing site of the second electrode where the second electrode faces the winding terminal end of the first electrode is reinforced with a reinforcing component for supplementing the thickness of the second electrode.

Abstract: A non-aqueous electrolyte secondary battery comprising: an electrode group in which a long first electrode, a long second electrode, and a long separator disposed therebetween are wound spirally; and a non-aqueous electrolyte, is provided. The first electrode includes a sheet-like first current collector and a first active material layer disposed on a surface of the first current collector. The second electrode includes a sheet-like second current collector and a second active material layer disposed on a surface of the second current collector. An end portion of the first electrode on a winding-end side of the electrode group has a non-linear form and faces the second electrode placed on an outer circumferential side with the separator therebetween. The non-linear form is preferably a periodically continuous form, for example a waveform.

Abstract: A socket for electrical part mounted on the wiring substrate to accommodate an electrical part. The present invention comprises a socket body, a floating plate and a holding structure. The socket body has a contact pin unit comprising a unit body in which the plural contact pins are mounted. The floating plate is mounted on upper side of the unit body to accommodate the electrical part, and comprises through holes into which the upper side contact portions of contact pins are inserted. The holding structure holds the floating plate in a descended state when the socket for the electrical part is not yet mounted on the wiring substrate, and releases the holding state of floating plate and makes the floating plate to be capable of moving vertically under the state of being urged upward when the socket for the electrical part is mounted on the wiring substrate.

Abstract: In a semiconductor integrated circuit device generating internal power from external power, an abnormal operation may occur due to an indefinite state of a control signal when the external power is applied and the internal power rises. The semiconductor integrated circuit includes an internal power generating circuit, a control circuit receiving internal power and supplying a first control signal, and a power-on reset circuit generating a reset signal at rising of the internal power. When internal power rises, the reset signal masks an indefinite state of the first control signal supplied from the control circuit.

Abstract: A method for manufacturing an eyeless needle by which a satisfactory hole can be formed in the end surface of a fine suture needle having a needle diameter less than 150 micrometers is proposed. In a method for manufacturing an eyeless needle by forming a hole for inserting and fixing one end of a suture thread by caulking in the end surface of the eyeless suture needle made of stainless steel, the hole is formed by irradiating the end surface of a needle material thicker by 6 to 20 micrometers than a desired needle diameter of the suture needle less than 150 micrometers with one shot of a laser beam, and subsequently, a portion thicker than the desired needle diameter is removed by electrolytic polishing or chemical polishing.

Abstract: A socket for an electric component includes: a socket main body having a receiving portion which receives an electric component such as an IC package; a socket cover supported to be capable of turning by a first turning shaft provided in a vicinity of one side end of the socket main body to turn to thereby open or close the housing portion; and a radiating member mounted to the socket cover and is in contact with the electric component received in the receiving portion to radiate heat from the electric component in a state of the socket cover being closed. The socket cover has an opening portion formed in a position corresponding to the receiving portion of the socket main body in the closed state, and the radiating member is supported to be capable of turning by a second turning shaft parallel to the first turning shaft in the opening of the socket cover.

Abstract: A socket for an electric component includes: a socket main body having a receiving portion which receives an electric component such as an IC package; a socket cover supported to be capable of turning by a first turning shaft provided in a vicinity of one side end of the socket main body to turn to thereby open or close the housing portion; and a radiating member mounted to the socket cover and is in contact with the electric component received in the receiving portion to radiate heat from the electric component in a state of the socket cover being closed. The socket cover has an opening portion formed in a position corresponding to the receiving portion of the socket main body in the closed state, and the radiating member is supported to be capable of turning by a second turning shaft parallel to the first turning shaft in the opening of the socket cover.

Abstract: In a protection circuit for protecting semiconductor integrated circuit devices from an electrostatic breakdown or a latch-up due to an external surge, etc, a drain terminal of a PMOS transistor MP1, having a source terminal connected to a power supply VDD and a gate terminal receiving a control signal VG1 which a control circuit 2 generates on the basis of a power supply GND, is connected to one end of a resistor R1, having the other end connected to the power supply GND, and to a gate terminal of an NMOS transistor MN1 having a drain terminal and a source terminal connected to the power supply VDD and the power supply GND, respectively, and outputs an internal signal VG2 to the gate terminal of the NMOS transistor. When a predetermined voltage or more is applied to the power supply, the power supply is short-circuited.

Abstract: In a semiconductor integrated circuit device generating internal power from external power, an abnormal operation may occur due to an indefinite state of a control signal when the external power is applied and the internal power rises. The semiconductor integrated circuit includes an internal power generating circuit, a control circuit receiving internal power and supplying a first control signal, and a power-on reset circuit generating a reset signal at rising of the internal power. When internal power rises, the reset signal masks an indefinite state of the first control signal supplied from the control circuit.

Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate having a first region and a second region. This method beings by forming a transistor in the first region of said semiconductor substrate. This transistor includes a pair of impurity diffusion regions and a gate electrode. Then forming a first insulating film over the first and second regions with this first insulating film covering the transistor in the first region. Thereafter, patterning the first insulating film to selectively remove the first insulating film in the second region. Then forming a second insulating film over the first and second regions. Thereafter, forming at least one contact hole through the second and first insulating film. The contact hole reaches one of the impurity diffusion regions. Finally, forming a conductive layer in the contact hole.

Abstract: A method for manufacturing an eyeless needle by which a satisfactory hole can be formed in the end surface of a fine suture needle having a needle diameter less than 150 micrometers is proposed. In a method for manufacturing an eyeless needle by forming a hole for inserting and fixing one end of a suture thread by caulking in the end surface of the eyeless suture needle made of stainless steel, the hole is formed by irradiating the end surface of a needle material thicker by 6 to 20 micrometers than a desired needle diameter of the suture needle less than 150 micrometers with one shot of a laser beam, and subsequently, a portion thicker than the desired needle diameter is removed by electrolytic polishing or chemical polishing.

Abstract: In a semiconductor integrated circuit device that includes macro cells (circuit blocks that can be designed independently) such as a storage circuit and operates synchronously with an external clock, total delay time from signal input to output is reduced and the speed of operation is increased. In the semiconductor integrated circuit device which has plural circuit blocks coupled in series for signal transmission and whose whole operation is controlled by a clock signal, the semiconductor integrated circuit device including first circuit blocks that receive input signals in response to a first timing signal based on a clock signal, and a second circuit block that forms output signals in response to a second timing signal based on the clock signal, a time difference between the first timing signal and the second timing signal is set to a non-integral multiple of the cycle of the clock signal.

Abstract: The semiconductor device comprises an interconnection layer 14 formed on a substrate 10, a cap insulation film 22 formed on the upper surface of the interconnection layer 14, and a sidewall insulation film which is formed on the side walls of the interconnection layer 14 and the cap insulation film 22 and which includes a larger layer number of insulation films 24, 26 28 covering the side wall of the interconnection layer 14 at the side wall of the cap insulation film 22 than a layer number of insulation films 24, 26 at the side wall of the cap insulation film 22. Accordingly, the sidewall insulation film can be thickened at the side wall of the interconnection layer 14, whereby a parasitic capacitance between the interconnection layer 14 and the electrodes 32 adjacent to the interconnection layer 14 through the sidewall insulation film can be low.

Abstract: A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating fi