Abstract: Provided is a delamination container having improved oxygen barrier properties. The present invention provides a delamination container provided with a container body having an outer shell and an inner pouch, the inner pouch being adapted to delaminate from the outer shell and contract in association with a decrease of the contents, wherein the inner layer constituting the inner pouch is provided with, in order from the container outer surface side, an outside layer, an adhesive layer, and an inside layer. The outside layer includes an EVOH layer, and the inside layer has a thickness of 60-200 ?m and a flexural modulus of 250 MPa or less, the value (thickness of the inside layer/thickness of the EVOH layer) being 1.1-5, and the total thickness of the inside layer being 100-250 ?m.

Abstract: Provided is a delamination container having improved oxygen barrier properties. The present invention provides a delamination container provided with a container body having an outer shell and an inner pouch, the inner pouch being adapted to delaminate from the outer shell and contract in association with a decrease of the contents, wherein the inner layer constituting the inner pouch is provided with, in order from the container outer surface side, an outside layer, an adhesive layer, and an inside layer. The outside layer includes an EVOH layer, and the inside layer has a thickness of 60-200 ?m and a flexural modulus of 250 MPa or less, the value (thickness of the inside layer/thickness of the EVOH layer) being 1.1-5, and the total thickness of the inside layer being 100-250 ?m.

Abstract: A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.

Abstract: The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

Abstract: The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

Abstract: A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.