Abstract: Preparing a low dielectric constant thin film layer used in an integrated circuit includes: extracting gas out of a furnace; when the vacuum level within the furnace is less than 10?3 Pa, starting a 13.36 MHz radio frequency power supply and a matcher; sending the exhaust nitrogen gas, used to remove remaining gas out of the furnace by a third gas inlet pipe, into the furnace through a second pressure gas mixing tank and a second nozzle sequentially; uniformly mixing octamethyl cyclotetrasiloxane and cyclohexane, and introducing same into a pressure stainless steel tank, and, respectively by first and second gas inlet tubes, introducing bubbled nitrogen gas and inert gas into the furnace sequentially through a first pressure gas mixing tank, the pressure stainless steel tank and a first nozzle; after deposition, transferring the deposited thin film layer to the furnace's heating zone for annealing, obtaining a low dielectric constant thin film layer.

Abstract: Preparing a low dielectric constant thin film layer used in an integrated circuit includes: extracting gas out of a furnace; when the vacuum level within the furnace is less than 10?3 Pa, starting a 13.36 MHz radio frequency power supply and a matcher; sending the exhaust nitrogen gas, used to remove remaining gas out of the furnace by a third gas inlet pipe, into the furnace through a second pressure gas mixing tank and a second nozzle sequentially; uniformly mixing octamethyl cyclotetrasiloxane and cyclohexane, and introducing same into a pressure stainless steel tank, and, respectively by first and second gas inlet tubes, introducing bubbled nitrogen gas and inert gas into the furnace sequentially through a first pressure gas mixing tank, the pressure stainless steel tank and a first nozzle; after deposition, transferring the deposited thin film layer to the furnace's heating zone for annealing, obtaining a low dielectric constant thin film layer.