Patents by Inventor Yujian XIA

Yujian XIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10153154
    Abstract: Preparing a low dielectric constant thin film layer used in an integrated circuit includes: extracting gas out of a furnace; when the vacuum level within the furnace is less than 10?3 Pa, starting a 13.36 MHz radio frequency power supply and a matcher; sending the exhaust nitrogen gas, used to remove remaining gas out of the furnace by a third gas inlet pipe, into the furnace through a second pressure gas mixing tank and a second nozzle sequentially; uniformly mixing octamethyl cyclotetrasiloxane and cyclohexane, and introducing same into a pressure stainless steel tank, and, respectively by first and second gas inlet tubes, introducing bubbled nitrogen gas and inert gas into the furnace sequentially through a first pressure gas mixing tank, the pressure stainless steel tank and a first nozzle; after deposition, transferring the deposited thin film layer to the furnace's heating zone for annealing, obtaining a low dielectric constant thin film layer.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: December 11, 2018
    Assignee: SOOCHOW UNIVERSITY
    Inventors: Xuhui Sun, Yujian Xia
  • Publication number: 20170069489
    Abstract: Preparing a low dielectric constant thin film layer used in an integrated circuit includes: extracting gas out of a furnace; when the vacuum level within the furnace is less than 10?3 Pa, starting a 13.36 MHz radio frequency power supply and a matcher; sending the exhaust nitrogen gas, used to remove remaining gas out of the furnace by a third gas inlet pipe, into the furnace through a second pressure gas mixing tank and a second nozzle sequentially; uniformly mixing octamethyl cyclotetrasiloxane and cyclohexane, and introducing same into a pressure stainless steel tank, and, respectively by first and second gas inlet tubes, introducing bubbled nitrogen gas and inert gas into the furnace sequentially through a first pressure gas mixing tank, the pressure stainless steel tank and a first nozzle; after deposition, transferring the deposited thin film layer to the furnace's heating zone for annealing, obtaining a low dielectric constant thin film layer.
    Type: Application
    Filed: June 23, 2014
    Publication date: March 9, 2017
    Applicant: ZHANGJIAGANG INSTITUTE OF INDUSTRIAL TECHNOLOGIES SOOCHOW UNIVERSITY
    Inventors: Xuhui SUN, Yujian XIA