Abstract: A hierarchical health index evaluation method for an intelligent substation includes: obtaining a basic health index of a device based on static information and dynamic information of the device; obtaining a device correlation based on a communication connection relationship between the device and another device, and correcting the basic health index of the device based on the device correlation to obtain a health index of the device; obtaining a layer-based health index of a layer based on a device health index and a device importance weight of the layer; obtaining a whole-station health index of an intelligent substation based on a layer-based health index of each layer and a sum of device importance weights of each layer; and regulating the intelligent substation based on a health index of each device in the intelligent substation, the layer-based health index of each layer, and the whole-station health index.

Abstract: A hierarchical health index evaluation method for an intelligent substation includes: obtaining a basic health index of a device based on static information and dynamic information of the device; obtaining a device correlation based on a communication connection relationship between the device and another device, and correcting the basic health index of the device based on the device correlation to obtain a health index of the device; obtaining a layer-based health index of a layer based on a device health index and a device importance weight of the layer; obtaining a whole-station health index of an intelligent substation based on a layer-based health index of each layer and a sum of device importance weights of each layer; and regulating the intelligent substation based on a health index of each device in the intelligent substation, the layer-based health index of each layer, and the whole-station health index.

Abstract: The present disclosure provides a bias magnetic field control method, a magnetic thin film deposition method, a chamber, and an apparatus. The control method includes the following step: S1, rotating the bias magnetic field device by a fixed angle along a circumferential direction of a base every first preset application time length of a target until total application time length of the target reaches an upper limit. Each time the bias magnetic field device is rotated in a same direction. With the technical solution of the bias magnetic field control method, the magnetic thin film deposition method, the chamber, and the apparatus of the present disclosure, the lifetime of the target may be increased, and the utilization rate of the target and the film thickness uniformity may be improved to reduce manufacturing cost.

Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.

Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.

Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.

Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.

Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.