Abstract: Embodiments herein describe techniques for a memory device including at least two memory cells. A first memory cell includes a first storage cell and a first transistor to control access to the first storage cell. A second memory cell includes a second storage cell and a second transistor to control access to the second storage cell. A shared contact electrode is shared between the first transistor and the second transistor, the shared contact electrode being coupled to a source area or a drain area of the first transistor, coupled to a source area or a drain area of the second transistor, and further being coupled to a bit line of the memory device. Other embodiments may be described and/or claimed.

Abstract: Described herein are integrated circuit devices with metal-oxide semiconductor channels and carbon source and drain (S/D) contacts. S/D contacts conduct current to and from the semiconductor devices, e.g., to the source and drain regions of a transistor. Carbon S/D contacts may be particularly useful with semiconductor devices that use certain channel materials, such as indium gallium zinc oxide.

Abstract: An embodiment of the present invention is directed toward machine learning to produce results encompassing a new output. A machine learning model is trained to determine a candidate output from among a plurality of candidate outputs. First embeddings associated with the plurality of candidate outputs are generated from a first set of training data by an intermediate layer of the trained machine learning model. Second embeddings associated with a new candidate output are generated from a second set of training data by the intermediate layer of the trained machine learning model. A third embedding is determined for input data by the intermediate layer of the trained machine learning model. A resulting candidate output for the input data is predicted from a group of the plurality of candidate outputs and the new candidate output based on distances for the third embedding to the first and second embeddings.

Abstract: A method for receiving a full training data set including a plurality of individual training data set, dividing the plurality of individual training sets into N classes, where N is an integer greater than three, dividing the N classes into M full data classes and N-M partial data classes, performing training to obtain a trained fixed size machine learning (ML) classification model and a trained in-class confidence model, outputting a first set of prediction value(s) based on the performance of training, distributing each class of the N classes of individual training data sets to a different node of a distributed machine learning system; and outputting, from the nodes of the distributed machine learning system, a second set of prediction value(s) for each class of the N classes.

Abstract: Embodiments disclosed herein include semiconductor devices with Schottky diodes in a back end of line stack. In an embodiment, a semiconductor device comprises a semiconductor layer, where transistor devices are provided in the semiconductor layer, and a back end stack over the semiconductor layer. In an embodiment, a diode is in the back end stack. In an embodiment, the diode comprises a first electrode, a semiconductor region over the first electrode, and a second electrode over the semiconductor region. In an embodiment, a first interface between the first electrode and the semiconductor region is an ohmic contact, and a second interface between the semiconductor region and the second electrode is a Schottky contact.

Abstract: Embodiments herein describe techniques for a memory device including at least two memory cells. A first memory cell includes a first storage cell and a first transistor to control access to the first storage cell. A second memory cell includes a second storage cell and a second transistor to control access to the second storage cell. A shared contact electrode is shared between the first transistor and the second transistor, the shared contact electrode being coupled to a source area or a drain area of the first transistor, coupled to a source area or a drain area of the second transistor, and further being coupled to a bit line of the memory device. Other embodiments may be described and/or claimed.

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

Abstract: Provided are techniques for the transmission of electronic mail (email). While a user composes an email message and once an intended recipient has been entered, negotiation modules associated with client and server computers check both the recipient and attributes of the message as they are entered. The user is notified if there is an issue with the intended recipient and alternative recipients may be suggested. The user is also notified if a particular attribute exceeds a defined limit. In this manner, the user may alter the message so that the attribute conforms to the limit to ensure delivery. Tests may be provided to enable a user to exceed a limit and some users may be pre-authorized to exceed a limit.

Abstract: An approach is provided for communications between a device and a server in a service system where data and application are stored and executed by a plurality of computing systems in the internet. The approach includes transmitting, via the device, a request of a selected application to the server; in response to the request, transmitting, via the server, a graphical image indicative of an execution of the selected application to the device.

Abstract: Provided are techniques for the transmission of electronic mail (email). While a user composes an email message and once an intended recipient has been entered, negotiation modules associated with client and server computers check both the recipient and attributes of the message as they are entered. The user is notified if there is an issue with the intended recipient and alternative recipients may be suggested. The user is also notified if a particular attribute exceeds a defined limit. In this manner, the user may alter the message so that the attribute conforms to the limit to ensure delivery. Tests may be provided to enable a user to exceed a limit and some users may be pre-authorized to exceed a limit.

Abstract: An approach is provided for communications between a device and a server in a service system where data and application are stored and executed by a plurality of computing systems in the internet. The approach includes transmitting, via the device, a request of a selected application to the server; in response to the request, transmitting, via the server, a graphical image indicative of an execution of the selected application to the device.