Abstract: A semiconductor device includes a gate structure including a plurality of conductive layers alternately stacked with a plurality of insulating layers; a contact structure extending within the gate structure and electrically connected to one of the conductive layers; a plurality of second supports, each second support including a pillar having a center located within a first distance of a center of the contact structure and protrusions extending between the pillar and the plurality of conductive layers; and a plurality of first supports at least partially surrounded by the plurality of protrusions.

Abstract: A semiconductor device may include a gate structure including conductive layers and insulating layers that are alternately stacked; support structures respectively located at vertices of a polygon defined on an upper surface of the gate structure and each support structure including a pillar extending through the gate structure and protrusion portions protruding from the pillar toward the conductive layers; and a contact structure extending through the gate structure inside the polygon and electrically connected to a first conductive layer of the conductive layers, wherein the protrusion portions may include first protrusion portions in contact with the contact structure and second protrusion portions located below the contact structure.

Abstract: A three-dimensional memory device includes a stack structure including first and second tier stacks stacked on a substrate, each of the first and second tier stacks including a plurality of electrode layers and a plurality of interlayer insulating layers alternately stacked; a connection contact penetrating at least partially the stack structure; and a plurality of support patterns each including a first tier support penetrating the first tier stack and a second tier support penetrating the second tier stack. The plurality of support patterns include first support patterns adjacent to the connection contact. In two first support patterns among the first support patterns, which neighbor each other with the connection contact interposed therebetween, a gap between first tier supports is smaller than a gap between second tier supports.

Abstract: The present invention pertains to an auxin receptor protein involved in activation of proton pump in plasma membrane of a plant derived from rice, a gene encoding the protein, a recombinant vector comprising the gene, a host cell transformed with the recombinant vector, a method of improving traits of a plant by transforming the plant with the recombinant plant expression vector, a plant having improved traits by transformation with the recombinant plant expression vector and seeds of the plant, and a composition comprising the gene of the invention for improving traits of a plant.