Abstract: An external resonator-type semiconductor laser device 1A includes an external resonator formed of one or a plurality of laser diode light sources and a VBG; an optical fiber which outputs output light La from the laser diode light source toward the VBG, and into which return light Lb from the VBG is input; and a displacement unit that displaces a disposition position of the VBG with respect to an input and output end surface of the optical fiber.

Abstract: A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle ?S (>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (?S/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (??S/2) and equal to or less than ?2° with the plane perpendicular to the optical axis direction of the active layers.

Abstract: A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle ?S (>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (?S/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (??S/2) and equal to or less than ?2° with the plane perpendicular to the optical axis direction of the active layers.

Abstract: This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90°. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.

Abstract: This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90°. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.

Abstract: An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array stack (12, 22), collimator lenses (16, 26), and beam converters (18, 28). Since the optical combiner (30) combines the beams from one (12) of the stacks and the beams from the other (22), a laser beam with high optical density is generated. The optical combiner (30) has transmitting portions (32) and reflecting portions (34), each of which preferably has a strip-like shape elongated in the layering directions of the stacks (12, 22). In this case, the beams emitted from the active layers (14, 24) will be received and combined appropriately by the optical combiner (30) even if positional deviation of the active layers (14, 24) occurs.

Abstract: This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90°. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.

Abstract: In this laser beam machine 1, while a pressing portion 9 of an optical guide member 6 presses a lid 13 against a body 12 of a container, the optical guide member 6 annularly guides a laser beam propagated through an optical fiber 4 and outputs it from the pressing portion 9. Thereby, an annular processing region of the body 12 and the lid 13 is entirely irradiated with the laser beam at one time and the lid 13 can be joined to the body 12, whereby improving the working efficiency. Such improvement in working efficiency shortens the processing time and improves the production yield. Furthermore, this laser beam machine 1 does not need to be separately provided with a rotating mechanism for laser beam scanning and a pressurizing mechanism for the body 12 and the lid 13, so that construction of the machine can be significantly simplified.

Abstract: An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.

Abstract: An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array (12, 22), a collimator lens (16, 26) and a beam converter (18, 28). The optical combiner (30) combines the beams from the light sources (10, 20). The spread of the beams in planes perpendicular to the direction of alignment of the active layers (14, 24) is restrained by the refraction of the collimator lenses (16, 26). The transverse sections of the respective beams are rotated by substantially 90° by the beam converters (18, 28). The spread of the beams in the direction of alignment of the active layers is thus restrained and crossing of adjacent beams becomes unlikely to occur.

Abstract: The semiconductor laser device 1A has a semiconductor laser array 3 including a plurality of active layers 2 arranged in parallel along a slow direction, and outputs laser beams from the front end face 2a side of the active layers 2. The semiconductor laser device 1A comprises a collimating lens 5 that collimates laser beams L1 outputted from the respective rear end faces 2b of the active layers 2 within a plane orthogonal to the slow axis, and a reflecting mirror 9 that feeds back parts of the laser beams L2 outputted from the collimating lens 5 to the respective active layers 2 via the collimating lens 5.

Abstract: An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.

Abstract: A semiconductor laser apparatus capable of reducing a spread angle of emission light with downsizing has an active region between first and second end surfaces. A first reflection structure and a partial reflection structure are provided on the first end surface side. The end surface of the active region is divided into a total reflection region and a partial reflection region in combination with the first reflection structure and partial reflection structure. A laser resonator includes the first reflection structure and partial reflection structure. A second reflection structure is positioned on the way of a resonance optical path of the laser resonator. Light emitted within the active region propagates on a resonance optical path. An induction emission is produced. The semiconductor laser carries out a laser oscillation. Of the light arriving at the partial reflection structure, the portion transmitted through the partial reflection structure is outputted outside the apparatus.

Abstract: This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90°. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.

Abstract: The present invention relates to a semiconductor laser device having a structure capable of emitting laser beam having a small spread angle and further of narrowing the spectrum width of the laser beam. The semiconductor laser device comprises a semiconductor laser array, a collimator lens, and an optical element having at least partially a reflecting function. The semiconductor laser array has plural active layers, and the active layers extend along a first direction on a predetermined plane and are arranged in parallel along a second direction perpendicular to the first direction on the predetermined plane. The collimator lens collimates plural beams, respectively emitted from the active layers, in a third direction perpendicular to the predetermined plane.

Abstract: The semiconductor laser device 1A has a semiconductor laser array 3 including a plurality of active layers 2 arranged in parallel along a slow direction, and outputs laser beams from the front end face 2a side of the active layers 2. The semiconductor laser device 1A comprises a collimating lens 5 that collimates laser beams L1 outputted from the respective rear end faces 2b of the active layers 2 within a plane orthogonal to the slow axis, and a reflecting mirror 9 that feeds back parts of the laser beams L2 outputted from the collimating lens 5 to the respective active layers 2 via the collimating lens 5.

Abstract: In this laser beam machine 1, while a pressing portion 9 of an optical guide member 6 presses a lid 13 against a body 12 of a container, the optical guide member 6 annularly guides a laser beam propagated through an optical fiber 4 and outputs it from the pressing portion 9. Thereby, an annular processing region of the body 12 and the lid 13 is entirely irradiated with the laser beam at one time and the lid 13 can be joined to the body 12, whereby improving the working efficiency. Such improvement in working efficiency shortens the processing time and improves the production yield. Furthermore, this laser beam machine 1 does not need to be separately provided with a rotating mechanism for laser beam scanning and a pressurizing mechanism for the body 12 and the lid 13, so that construction of the machine can be significantly simplified.

Abstract: An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array stack (12, 22), collimator lenses (16, 26), and beam converters (18, 28). Since the optical combiner (30) combines the beams from one (12) of the stacks and the beams from the other (22), a laser beam with high optical density is generated. The optical combiner (30) has transmitting portions (32) and reflecting portions (34), each of which preferably has a strip-like shape elongated in the layering directions of the stacks (12, 22). In this case, the beams emitted from the active layers (14, 24) will be received and combined appropriately by the optical combiner (30) even if positional deviation of the active layers (14, 24) occurs.

Abstract: An optical condenser device has light sources (10, 20) and an optical combiner (30). Each light source (10, 20) includes a semiconductor laser array (12, 22), a collimator lens (16, 26) and a beam converter (18, 28). The optical combiner (30) combines the beams from the light sources (10, 20). The spread of the beams in planes perpendicular to the direction of alignment of the active layers (14, 24) is restrained by the refraction of the collimator lenses (16, 26). The transverse sections of the respective beams are rotated by substantially 90° by the beam converters (18, 28). The spread of the beams in the direction of alignment of the active layers is thus restrained and crossing of adjacent beams becomes unlikely to occur.

Abstract: The present invention relates to a semiconductor laser apparatus capable of reducing a spread angle of an emission light with downsizing. The semiconductor laser apparatus has an active region between a first end surface and a second end surface. A first reflection structure and a partial reflection structure are provided on the first end surface side, and the end surface of the active region is divided into a total reflection region and a partial reflection region in combination with these first reflection structure and partial reflection structure. A laser resonator is constituted by the first reflection structure and partial reflection structure. On the second end surface side, a second reflection structure is provided to be positioned on the way of a resonance optical path of the laser resonator. While the light emitted within the active region propagates on a resonance optical path, an induction emission is produced, and thereby the semiconductor laser carries out a laser oscillation.