Abstract: A solid-state method for recycling spent and/or scrap cathode material includes heating a cathode material comprising lithium nickel manganese cobalt oxide in an oxygen-containing atmosphere at a temperature T1 for an effective period of time t1 to convert the cathode material to a solid precursor, combining the solid precursor with a lithium compound, and heating the solid precursor and the lithium compound in an oxygen-containing atmosphere at a temperature T2 for an effective period of time t2 to form a product comprising monocrystalline lithium nickel manganese cobalt oxide having a formula LiNixMnyMzCo1-x-y-zO2, where M represents one or more dopant metals, x?0.33, 0.01?y<0.33, 0?z?0.05, and x+y+?z 1.0.

Abstract: Implementations are described herein for leveraging an agricultural knowledge graph to generate messages automatically. In various implementations, an agricultural event may trigger proactive performance of one or more of the following operations. Nodes of the agricultural knowledge graph may be identified as related to the agricultural event, including field node(s) representing subject agricultural field(s) to which the agricultural event is relevant and other node(s) connected to one or more of the field nodes by edge(s). Machine learning model(s) may be accessed based on the identified nodes and/or the edges that connect the identified nodes. Data relevant to the subject agricultural field(s) may be retrieved from data source(s) controlled by an agricultural entity and processed based on the machine learning model(s) to generate inference(s) about the subject agricultural field(s).

Abstract: The present disclosure relates to a construction method for a deformable anchor cable capable of being prestressed. The anchor cable includes an outer sleeve, a shrinkage pipe, an inner sleeve, a steel strand, an anchor and a tray. When the anchor cable is in use, a hole is drilled first, then the anchor cable is mounted in the drilled hole, and finally a prestress is applied to the steel strand of the anchor cable. According to the construction method, the construction is convenient; the anchor cable has the characteristics of high strength and large deformation, and can be easily prestressed; and the large deformation is realized by squeezing the inner sleeve by means of the anchor, which completely overcomes the problem of breaking a cold-drawn rod during the large deformation process.

Abstract: The present disclosure relates to a method, apparatus, electronic device and storage medium for presentation of a matching scheme. The method comprises: acquiring a set of matching schemes; transmitting, to a first terminal, attribute information of matching schemes in the set of matching schemes, so that the first terminal displays attribute information of matching schemes comprised in the set of matching schemes; in response to a selection request for one of matching schemes transmitted by the first terminal, determining the selected matching scheme as a matching scheme to be explained; in response to a presentation request for the matching scheme to be explained that is transmitted by a second terminal, transmitting attribute information of the matching scheme to be explained to the second terminal, so that the second terminal presents a target information streaming page comprising at least a part of attribute information of the matching scheme to be explained.

Abstract: The present invention relates to a support method of preset internal cable for in-situ tunnel expansion project, comprising a cable, lockset and an anchoring agent, wherein before the excavation of the newly-built tunnel, a borehole is drilled into the surrounding rock from the in-situ tunnel, and the cable is installed in the borehole and pre-stressed, so as to play a supporting role at the moment of excavation of the newly-built tunnel. The cable is fixed in the depth of the surrounding rock by the anchoring agent, and the lockset of the cable is set at the position of the excavation contour line of the newly-built tunnel inside the surrounding rock. The present invention provides a method that does not interfere with the excavation construction and can effectively support the surrounding rock of the expanded tunnel in advance.

Abstract: A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

Abstract: A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

Abstract: A device (100) includes a substrate (101-106) with an upper semiconductor layer, buried semiconductor layer, and a DTI structure (107-108) defining an active device region; a dummy LDMOS device (121) in the active device region which includes a grounded drain (D1) in a drift region (105), a source (S1, S2) in a body region (109) which extends to contact the buried semiconductor layer, a gate electrode (G1-G4) formed so that the source and at least part of the gate electrode are connected with the body implant region, and a buffering semiconductor layer portion (104) adjacent the DTI structure; and one or more active LDMOS devices (122) positioned in the active device region to be separated from the DTI structure by the dummy LDMOS device (121) which reduces an electric field across the sidewall insulator layer (107) in the DTI structure.

Abstract: A device (100) includes a substrate (101-106) with an upper semiconductor layer, buried semiconductor layer, and a DTI structure (107-108) defining an active device region; a dummy LDMOS device (121) in the active device region which includes a grounded drain (D1) in a drift region (105), a source (S1, S2) in a body region (109) which extends to contact the buried semiconductor layer, a gate electrode (G1-G4) formed so that the source and at least part of the gate electrode are connected with the body implant region, and a buffering semiconductor layer portion (104) adjacent the DTI structure; and one or more active LDMOS devices (122) positioned in the active device region to be separated from the DTI structure by the dummy LDMOS device (121) which reduces an electric field across the sidewall insulator layer (107) in the DTI structure.

Abstract: A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.

Abstract: A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.

Abstract: A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.

Abstract: A method of making a semiconductor device (10) having a low permittivity region (24) includes forming a first layer (30/42) over a surface of a trench (20), and etching through an opening (70) in the first layer that is smaller than a width (W2) of the trench to remove a first material (38) from the trench. A second material (44) is deposited to plug the opening to seal an air pocket (40) in the trench. The low permittivity region features air pockets with a high volume because the small size of the opening allows the second material to plug the trench without accumulating significantly in the trench.

Abstract: A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.