Patents by Inventor Yujira ISHIHARA

Yujira ISHIHARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
    Publication number: 20190348504
    Abstract: A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.
    Type: Application
    Filed: December 18, 2017
    Publication date: November 14, 2019
    Inventors: Yasunobu SUMIDA, Yasuharu FUJIYAMA, Hiroki GOTO, Takuya NAKAGAWA, Yujira ISHIHARA