Abstract: A nondestructive inspection apparatus makes a neutron beam incident on an inspection target, detects a specific gamma ray deriving from a target component in the inspection target, among gamma rays generated by the neutron beam, and determines a depth at which the target component exists, based on a result of the detecting. The nondestructive inspection apparatus includes a neutron source that emits a neutron beam to a surface of the inspection target, a gamma ray detection device that detects, as detection intensities, intensities of a plurality of types of specific gamma rays whose energy differs from each other, and a ratio calculation unit that determines a ratio between the detection intensities of a plurality of types of the specific gamma rays.

Abstract: A concentration detector includes: a neutron source emitting neutrons to a target; a gamma ray detector detecting and determining an amount of specific gamma rays that are among gamma rays generated in the target by interactions with the neutrons; and a concentration calculator calculating a concentration of the target at selected depths in the inspection target, based on the detected amount. A relational expression expressing a relation between a plurality of concentrations of the target in a plurality of virtual layers and a detected amount of the specific gamma rays is predetermined for each type of the specific gamma rays or each detection condition. The concentration calculator applies the detected amount for each gamma ray type or each detection condition, to the relational expression for the type or the detection condition, and calculates a concentration of the target component in the layer at each depth or the specific depth.

Abstract: A nondestructive inspection apparatus makes a neutron beam incident on an inspection target, detects a specific gamma ray deriving from a target component in the inspection target, among gamma rays generated by the neutron beam, and determines a depth at which the target component exists, based on a result of the detecting. The nondestructive inspection apparatus includes a neutron source that emits a neutron beam to a surface of the inspection target, a gamma ray detection device that detects, as detection intensities, intensities of a plurality of types of specific gamma rays whose energy differs from each other, and a ratio calculation unit that determines a ratio between the detection intensities of a plurality of types of the specific gamma rays.

Abstract: A film forming method includes forming a metal or silicide film by a deposition apparatus which is cleaned by passing a cleaning gas therethrough and subjected to an idle deposition using a material for the metal or silicide film intended to be formed within 24 hours after cleaning. Thereby the content of a halogen element in the formed film is reduced.

Abstract: Radiography apparatus includes an arrangement for circulating pure water continuously between a location adjacent a source of energetic neutrons, such as a tritium target irradiated by a deuteron beam, and a remote location where radiographic analysis is conducted. Oxygen in the pure water is activated via the .sup.16 O(n,p).sup.16 N reaction using .sup.14 -MeV neutrons produced at the neutron source via the .sup.3 H(d,n).sup.4 He reaction. Essentially monoenergetic gamma rays at 6.129 (predominantly) and 7.115 MeV are produced by the 7.13-second .sup.16 N decay for use in radiographic analysis. The gamma rays have substantial penetrating power and are useful in determining the thickness of materials and elemental compositions, particularly for metals and high-atomic number materials. The characteristic decay half life of 7.

Abstract: A process for forming a contact which comprises (i) forming on a semiconductor substrate a LOCOS oxide film and a conductive pattern thereon, respectively, (ii) forming a first dielectric film and a second dielectric film on a semiconductor substrate including the LOCOS oxide film and the conductive pattern, respectively, and applying a heat treatment to the substrate, (iii) depositing a SiO film while the second dielectric film in a slant or tapered form formed over the edge portion of the conductive pattern is etched, wherein the deposition and etching is conducted by using Bias ECR method, thereby providing uniform thickness of each of the first and second dielectric films and the SiO film at a predetermined contact forming part, and (iv) forming a contact at the predetermined contact forming part.

Abstract: A method for forming a contact plug comprising steps of depositing on a semiconductor substrate provided with a base device an interlayer insulator consisting of lowermost, intermediate and uppermost layers in which the intermediate layer is less sensitive to an etchant which is capable of dissolving the lowermost layer; subjecting the resultant substrate to a thermal treatment to planarize the surface of the uppermost layer; forming a contact hole by dry-etching at an intended contact region of the interlayer insulator; subjecting the contact hole to wet-etching with an etchant which is capable of dissolving the lowermost layer of the interlayer insulator to form a stepped portion between the edges of the lowermost layer and the intermediate layer in the contact hole; and depositing a metal in the resulting contact hole to form a contact plug, thereby preventing the contact plug from peeling off the substrate.