Patents by Inventor Yujuan Zhang

Yujuan Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11136527
    Abstract: A lubricant, including, by weight: 80-85 parts of a base oil; 1-2 parts of a methyl-silicone oil; 1-2 parts of polymethacrylate; 2-4 parts of pentaerythritol polyisobutylene succinate; 1-2 parts of di-n-butyl phosphite; 2-3 parts of butylhydroxytoluene; 2-4 parts of an ethylene-propylene copolymer; 1-2 parts of an alkenyl succinate; and 3-5 parts of copper nanoparticles. A method of preparing the lubricant includes: adding the base oil, the methyl-silicone oil, the polymethacrylate, the ethylene-propylene copolymer, the butylhydroxytoluene, the alkenyl succinate to a reactor, and stirring a resulting first mixture under normal temperature and pressure at 300-400 rpm for 3-4 hours, to yield a primary product; and adding the di-n-butyl phosphite, the pentaerythritol polyisobutylene succinate, and the copper nanoparticles to the primary product, and stirring a resulting second mixture at 150-250 rpm for 2-2.5 hours.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: October 5, 2021
    Assignee: HENAN UNIVERSITY
    Inventors: Yujuan Zhang, Shengmao Zhang, Pingyu Zhang, Zhijun Zhang
  • Publication number: 20200080019
    Abstract: A lubricant, including, by weight: 80-85 parts of a base oil; 1-2 parts of a methyl-silicone oil; 1-2 parts of polymethacrylate; 2-4 parts of pentaerythritol polyisobutylene succinate; 1-2 parts of di-n-butyl phosphite; 2-3 parts of butylhydroxytoluene; 2-4 parts of an ethylene-propylene copolymer; 1-2 parts of an alkenyl succinate; and 3-5 parts of copper nanoparticles. A method of preparing the lubricant includes: adding the base oil, the methyl-silicone oil, the polymethacrylate, the ethylene-propylene copolymer, the butylhydroxytoluene, the alkenyl succinate to a reactor, and stirring a resulting first mixture under normal temperature and pressure at 300-400 rpm for 3-4 hours, to yield a primary product; and adding the di-n-butyl phosphite, the pentaerythritol polyisobutylene succinate, and the copper nanoparticles to the primary product, and stirring a resulting second mixture at 150-250 rpm for 2-2.5 hours.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 12, 2020
    Inventors: Yujuan ZHANG, Shengmao ZHANG, Pingyu ZHANG, Zhijun ZHANG
  • Publication number: 20190194030
    Abstract: A method of preparing a nanosheet tungsten disulfide. The method includes: heating a mixture including tungsten hexachloride, a sulfur source, and a surface modifier to a temperature of between 100 and 200° C. for at least 60 min. The sulfur source is thioacetamide or thiourea. The surface modifier is a C6-40 straight-chain or branched fatty acid, aliphatic amine, or a mixture thereof.
    Type: Application
    Filed: March 3, 2019
    Publication date: June 27, 2019
    Inventors: Shengmao ZHANG, Zhengquan JIANG, Yujuan ZHANG, Pingyu ZHANG, Zhijun ZHANG
  • Patent number: 9951476
    Abstract: The present invention provides a pulping method. Caustic soda is replaced with cheap lime to manufacture pulp in high efficiency, and meanwhile complexation, flocculation and acid-base neutralization of aluminum sulfate are further utilized, so as to recycle effective ingredients in a black liquid, achieve a yield approximate to a mechanical pulp yield, obtain quality of the chemical pulp, implement cyclic utilization of the black liquid and solve the pollution thereof.
    Type: Grant
    Filed: June 25, 2013
    Date of Patent: April 24, 2018
    Assignee: Beijing Insight Biomass LLC
    Inventors: Yingwu Yin, Peng Wan, Honggui Yu, Yujuan Zhang, Xiangxiang Sun, Lingyan Zhang
  • Patent number: 9728292
    Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm?3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm?3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm?3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: August 8, 2017
    Assignee: XIDIAN UNIVERSITY
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Yujuan Zhang, Chao Han, Yanqiang Shi
  • Publication number: 20150176207
    Abstract: The present invention provides a pulping method. Caustic soda is replaced with cheap lime to manufacture pulp in high efficiency, and meanwhile complexation, flocculation and acid-base neutralization of aluminum sulfate are further utilized, so as to recycle effective ingredients in a black liquid, achieve a yield approximate to a mechanical pulp yield, obtain quality of the chemical pulp, implement cyclic utilization of the black liquid and solve the pollution thereof.
    Type: Application
    Filed: June 25, 2013
    Publication date: June 25, 2015
    Applicant: BEIJING INSIGHT BIOMASS LLC
    Inventors: Yingwu Yin, Peng Wan, Honggui Yu, Yujuan Zhang, Xiangxiang Sun, Lingyan Zhang
  • Publication number: 20140225472
    Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.
    Type: Application
    Filed: May 31, 2012
    Publication date: August 14, 2014
    Applicant: Xidian University
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Yujuan Zhang, Chao Han, Yanqiang Shi