Abstract: The present invention addresses the problem of providing a jig that is capable of being easily attached and detached. A jig (21) includes a harness protective part (22) configured to be enlargeable and reduceable into shapes including an annular shape of a mounted state in which the harness protective part is mounted to cover a periphery (13a) of a through hole (13) provided in a panel (11). The jig (21) includes a pair of tab operating parts (23) for deforming the harness protective part (22) to a reduced state side.

Abstract: A semiconductor device includes a first interlayer film formed on an upper surface of a substrate, a first metal wiring line, a second interlayer film, a second metal wiring line, a first via electrically connecting the first metal wiring line and the second metal wiring line, a landing pad embedded in an upper portion of the first interlayer film and penetrating the second interlayer film, and a second via penetrating the substrate and the first interlayer film from a back side of the substrate and connected to the landing pad. The lower surface position of the landing pad is different from that of the first metal wiring line.

Abstract: A semiconductor device includes a first interlayer film formed on an upper surface of a substrate, a first metal wiring line, a second interlayer film, a second metal wiring line, a first via electrically connecting the first metal wiring line and the second metal wiring line, a landing pad embedded in an upper portion of the first interlayer film and penetrating the second interlayer film, and a second via penetrating the substrate and the first interlayer film from a back side of the substrate and connected to the landing pad. The lower surface position of the landing pad is different from that of the first metal wiring line.

Abstract: A disordered fluorite-type photochemical hole burning crystal contains Sm.sup.2+ as active ions, and a composition except Sm.sup.2+ is represented by a general formula .alpha.-(MALn)F.sub.6-v X.sub.v where 0.ltoreq.v.ltoreq.1, and M is an element selected from Ca, Sr and Ba, A is an element selected from Na, K, Rb and Cs, Ln is an element selected from Y, La, Gd and Ce, and X is an element selected from Cl, Br and I. Stable hole burning occurs at the room temperature to create narrow holes. The crystal can be used as a superior optical recording material for a room temperature operation.