Patents by Inventor Yuka Kase
Yuka Kase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160240543Abstract: A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a first open above the element isolation insulating film in a first region; removing the second film on the element isolation insulating film in the first region to separate the second film in the first region into a plurality of parts by performing first etching; forming a third film on the second film in the first region; forming a first gate electrode on the third film in the first region; and forming a first insulating film that includes the first to third films under the first gate electrode by patterning the first to third films.Type: ApplicationFiled: April 21, 2016Publication date: August 18, 2016Inventors: Satoshi Torii, Hideaki Matsumura, Hikaru Kokura, Etsuro Kawaguchi, Katsuaki Ookoshi, Yuka Kase, Kengo Inoue
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Patent number: 9349600Abstract: A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a first open above the element isolation insulating film in a first region; removing the second film on the element isolation insulating film in the first region to separate the second film in the first region into a plurality of parts by performing first etching; forming a third film on the second film in the first region; forming a first gate electrode on the third film in the first region; and forming a first insulating film that includes the first to third films under the first gate electrode by patterning the first to third films.Type: GrantFiled: November 19, 2014Date of Patent: May 24, 2016Assignee: FUJITSU SEMICONDUCTOR LIMITEDInventors: Satoshi Torii, Hideaki Matsumura, Hikaru Kokura, Etsuro Kawaguchi, Katsuaki Ookoshi, Yuka Kase, Kengo Inoue
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Publication number: 20150137211Abstract: A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a first open above the element isolation insulating film in a first region; removing the second film on the element isolation insulating film in the first region to separate the second film in the first region into a plurality of parts by performing first etching; forming a third film on the second film in the first region; forming a first gate electrode on the third film in the first region; and forming a first insulating film that includes the first to third films under the first gate electrode by patterning the first to third films.Type: ApplicationFiled: November 19, 2014Publication date: May 21, 2015Inventors: Satoshi TORII, Hideaki MATSUMURA, Hikaru KOKURA, Etsuro KAWAGUCHI, Katsuaki OOKOSHI, Yuka KASE, Kengo INOUE
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Patent number: 8951844Abstract: A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.Type: GrantFiled: April 5, 2012Date of Patent: February 10, 2015Assignee: Fujitsu Semiconductor LimitedInventors: Naomi Yanai, Yuka Kase, Hiroyuki Ogawa
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Patent number: 8847282Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.Type: GrantFiled: January 28, 2014Date of Patent: September 30, 2014Assignee: Fujitsu Semiconductor LimitedInventors: Masaki Haneda, Yuka Kase, Masanori Terahara, Takayuki Aoyama
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Publication number: 20140138769Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.Type: ApplicationFiled: January 28, 2014Publication date: May 22, 2014Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Masaki Haneda, Yuka Kase, Masanori Terahara, Takayuki Aoyama
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Patent number: 8709896Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.Type: GrantFiled: April 5, 2012Date of Patent: April 29, 2014Assignee: Fujitsu Semiconductor LimitedInventors: Masaki Haneda, Yuka Kase, Masanori Terahara, Takayuki Aoyama
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Patent number: 8575704Abstract: A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.Type: GrantFiled: March 8, 2012Date of Patent: November 5, 2013Assignee: Fujitsu Semiconductor LimitedInventors: Masaki Haneda, Akiyoshi Hatada, Akira Katakami, Yuka Kase, Kazuya Okubo
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Publication number: 20120322226Abstract: A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.Type: ApplicationFiled: April 5, 2012Publication date: December 20, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Naomi Yanai, Yuka Kase, Hiroyuki Ogawa
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Publication number: 20120261760Abstract: A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.Type: ApplicationFiled: March 8, 2012Publication date: October 18, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Masaki Haneda, Akiyoshi Hatada, Akira Katakami, Yuka Kase, Kazuya Okubo
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Publication number: 20120256264Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.Type: ApplicationFiled: April 5, 2012Publication date: October 11, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Masaki Haneda, Yuka Kase, Masanori Terahara, Takayuki Aoyama
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Patent number: 8283226Abstract: A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.Type: GrantFiled: January 20, 2010Date of Patent: October 9, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Masahiro Fukuda, Yosuke Shimamune, Yuka Kase
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Publication number: 20100210083Abstract: A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.Type: ApplicationFiled: January 20, 2010Publication date: August 19, 2010Applicant: FUJITSU MICROELECTRONICS LIMITEDInventors: Masahiro Fukuda, Yosuke Shimamune, Yuka Kase
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Publication number: 20070093068Abstract: A semiconductor device manufacturing method involves heating up a solution containing sulfuric acid and hydrogen peroxide solution, replenishing the solution with a predetermined quantity of sulfuric acid and a predetermined quantity of hydrogen peroxide solution at a predetermined interval, maintaining a concentration of the sulfuric acid in the solution at a predetermined concentration level or higher, immersing the semiconductor substrate in the solution, and cleaning the semiconductor substrate.Type: ApplicationFiled: June 5, 2006Publication date: April 26, 2007Applicant: FUJITSU LIMITEDInventors: Junji Oh, Yuka Kase, Masatoshi Osuki, Masaomi Yamano