Abstract: A memory system includes a nonvolatile memory and a memory controller. The memory controller is configured to execute a process to adjust a temperature of the nonvolatile memory upon determining that the temperature is outside a preferred range.

Abstract: A memory system includes a nonvolatile memory and a memory controller. The memory controller is configured to execute a process to adjust a temperature of the nonvolatile memory upon determining that the temperature is outside a preferred range.

Abstract: According to one embodiment, a data storage apparatus includes a storage media and a controller. The controller is configured to execute a first process of reading or writing user data from or to the disk storage media which includes a plurality of recording areas, in accordance with a command requested via the host interface, the command including address information that are capable of specifying a recording area; to recognize a first area in which no user data is written, in a case of executing a second process different from the first process on the plurality of recording areas, without designating address information that are capable of specifying a recording area; and to execute the second process on a second area in which user data is written excluding the first area among the plurality of recording areas.

Abstract: This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region (A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer. In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer, and a p-type GaN crystal layer with low electric resistance can be obtained.

Abstract: This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region(A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer . In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer , and a p-type GaN crystal layer with low electric resistance can be obtained.

Abstract: According to one embodiment, there is provided a disk apparatus including a disk medium, a nonvolatile memory, and a controller. In the nonvolatile memory, data to be recorded to the disk medium is written. The controller is configured to perform, according to amount of free space of the nonvolatile memory, write process of the data in the nonvolatile memory collectively, or in multiple times with dividing the write process.