Patents by Inventor Yuka Nakamoto

Yuka Nakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230207603
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Application
    Filed: March 1, 2023
    Publication date: June 29, 2023
    Applicant: SONY GROUP CORPORATION
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
  • Publication number: 20230079834
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Application
    Filed: September 23, 2022
    Publication date: March 16, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: YUKA NAKAMOTO, YUKIHIRO SAYAMA, NOBUYUKI OHBA, SINTARO NAKAJIKI
  • Patent number: 11605666
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: March 14, 2023
    Assignee: SONY CORPORATION
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
  • Patent number: 11532659
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: December 20, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yuka Nakamoto, Yukihiro Sayama, Nobuyuki Ohba, Sintaro Nakajiki
  • Patent number: 10910423
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: February 2, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yuka Nakamoto, Yukihiro Sayama, Nobuyuki Ohba, Sintaro Nakajiki
  • Publication number: 20200350352
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Application
    Filed: July 21, 2020
    Publication date: November 5, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: YUKA NAKAMOTO, YUKIHIRO SAYAMA, NOBUYUKI OHBA, SINTARO NAKAJIKI
  • Publication number: 20200251514
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Application
    Filed: April 24, 2020
    Publication date: August 6, 2020
    Inventors: YUKA NAKAMOTO, YUKIHIRO SAYAMA, NOBUYUKI OHBA, SINTARO NAKAJIKI
  • Patent number: 10636826
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: April 28, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yuka Nakamoto, Yukihiro Sayama, Nobuyuki Ohba, Sintaro Nakajiki
  • Publication number: 20200127036
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Applicant: Sony Corporation
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
  • Patent number: 10559620
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: February 11, 2020
    Assignee: Sony Corporation
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
  • Publication number: 20180301491
    Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
    Type: Application
    Filed: October 12, 2016
    Publication date: October 18, 2018
    Inventors: YUKA NAKAMOTO, YUKIHIRO SAYAMA, NOBUYUKI OHBA, SINTARO NAKAJIKI
  • Publication number: 20160276398
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Application
    Filed: June 1, 2016
    Publication date: September 22, 2016
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
  • Patent number: 9425230
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: August 23, 2016
    Assignee: SONY CORPORATION
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto
  • Publication number: 20150171126
    Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.
    Type: Application
    Filed: December 11, 2014
    Publication date: June 18, 2015
    Inventors: Yuichi Seki, Toshinori Inoue, Yukihiro Sayama, Yuka Nakamoto