Abstract: A failure detection system detects a failure of a sensor that detects a state of a semiconductor manufacturing apparatus. The failure detection system includes a generation unit configured to generate times-series data of information on a detection value of the sensor during a determination period, a calculation unit configured to calculate a regression line of the times-series data, and a failure determination unit configured to determine whether the sensor has failed based on a slope of the regression line.

Abstract: An apparatus for forming a thin film by repeating, plural times, a cycle including supplying and adsorbing a precursor gas onto a substrate and generating a reaction product by allowing the precursor gas on the substrate to react with a reaction gas, which includes: a main precursor gas supply part for supplying the precursor gas; a reaction gas supply part for supplying the reaction gas; an adjustment-purpose precursor gas supply part for supplying an adjustment-purpose precursor gas to adjust an in-plane film thickness distribution of the thin film; and a controller for outputting a control signal to execute a step of forming the thin film using the main precursor gas supply part and the reaction gas supply part, and subsequently a step of supplying the adjustment-purpose precursor gas from the adjustment-purpose precursor gas supply part to compensate for a film thickness of a portion having a relatively thin film thickness.

Abstract: An abnormality detecting method includes: generating substrate information that represents a relationship between an in-plane position of a substrate processed in a semiconductor manufacturing apparatus and a film characteristic; and determining whether the film characteristic of the processed substrate is abnormal, based on the substrate information generated in the generating, and association information in which substrate information and abnormality factors are associated with each other.

Abstract: An abnormality detecting apparatus detects an abnormality of a semiconductor manufacturing apparatus, and includes: a data generator configured to generate correlation data based on a value of a first monitoring target and a value of a second monitoring target that are correlated with each other; a calculator configured to calculate a slop of a regression line of the correlation data based on the correlation data; and an abnormality determination device configured to determine an abnormality of the semiconductor manufacturing apparatus based on the slope of the regression line.

Abstract: A failure detection system detects a failure of a sensor that detects a state of a semiconductor manufacturing apparatus. The failure detection system includes a generation unit configured to generate times-series data of information on a detection value of the sensor during a determination period, a calculation unit configured to calculate a regression line of the times-series data, and a failure determination unit configured to determine whether the sensor has failed based on a slope of the regression line.

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.

Abstract: An apparatus for forming a thin film by repeating, plural times, a cycle including supplying and adsorbing a precursor gas onto a substrate and generating a reaction product by allowing the precursor gas on the substrate to react with a reaction gas, which includes: a main precursor gas supply part for supplying the precursor gas; a reaction gas supply part for supplying the reaction gas; an adjustment-purpose precursor gas supply part for supplying an adjustment-purpose precursor gas to adjust an in-plane film thickness distribution of the thin film; and a controller for outputting a control signal to execute a step of forming the thin film using the main precursor gas supply part and the reaction gas supply part, and subsequently a step of supplying the adjustment-purpose precursor gas from the adjustment-purpose precursor gas supply part to compensate for a film thickness of a portion having a relatively thin film thickness.

Abstract: A relief valve includes a first valve body having an annular shape including a peripheral edge portion, which is pressed against a hole edge portion of the communication hole, and an opening in a central portion of the annular shape; a second valve body pressed against a hole edge portion of the opening of the first valve body so as to close the opening; a first spring including a compression spring or a tension spring for pressing the first valve body against the hole edge portion of the communication hole; and a second spring including a compression spring or a tension spring for pressing the second valve body against the hole edge portion of the opening, wherein the first region and the second region communicate with each other.

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.