Abstract: According to the present disclosure, a resin raw material composition comprising resin pellets, a powder and a liquid component is provided. The resin raw material composition is a resin raw material composition for molding use or a resin raw material composition for microporous membranes. The resin raw material composition comprises granular bodies in each of which the liquid component is coated on at least a portion of the surface of each of the resin pellets and the powder is adhered to the liquid component.

Abstract: According to an embodiment, an inspection apparatus includes a communication interface and a processor. The communication interface acquires package information regarding a package being conveyed by a sorter that sorts the package and an operation signal generated based on an operation of an operator. The processor outputs reference information, based on past history in which inspection-result information indicating whether or not the package is a regulated-article candidate, generated based on the operation signal, and the package information are associated together, and the package information newly acquired.

Abstract: The present invention provides a protein having pentosidine oxidase activity, a method for measuring pentosidine comprising: contacting the protein with a specimen; and detecting a change caused by the contact, and the like.

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin.

Abstract: Provided is a microporous film which has a surface A and a surface B opposite to the surface A. In one embodiment, the microporous film has a ratio (FB/FA) of a dynamic friction coefficient FB of the surface B to a dynamic friction coefficient FA of the surface A of 1.2 to 20. In another embodiment, the microporous film is a single layer having a thickness of 3-18 ?m, a number NA of pores on the surface A is 10-100/?m2, a number NB of pores on the surface B is 20-200/?m2, and NA/NB is 0.2-0.96. In addition, a total area SA of pores on the surface A is 0.02-0.5 ?m2/?m2, a total area SB of pores on the surface B is 0.01-0.3 ?m2/?m2, and SA/SB is 1.1-10. Furthermore, in another embodiment, a number WB of protrusion-like bodies on the surface B is 0.2-1000/100 ?m2.

Abstract: A tapered roller bearing includes an inner ring, an outer ring, a plurality of tapered rollers, and an annular cage having a plurality of cage pockets. Each of the cage pockets has a retainer configured to permit displacement of the tapered roller in a direction with a component in a radial direction, and restrict detachment of the tapered roller to an outer side in the radial direction by bringing the retainer into contact with a part of an outer peripheral surface of the tapered roller. The cage pockets include a first cage pocket having a first retainer with which a permissible amount of the displacement is a first displacement amount, and a second cage pocket having a second retainer with which the permissible amount of the displacement is a second displacement amount smaller than the first displacement amount.

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin.

Abstract: An inner ring unit includes an inner ring, a plurality of tapered rollers, and a cage having an annular shape. The cage includes a plurality of cage bars. The cage includes a stopper portion that is provided to protrude from an axial intermediate portion of the cage bar in the circumferential direction of the cage and configured to hinder the tapered rollers from falling off toward a radially outer side by bringing an axial intermediate portion on an outer peripheral surface of each tapered roller housed in a pocket into contact with the stopper portion. The axial intermediate portion on the outer peripheral surface of the tapered roller is a portion that is disposed on a one axial side and on the radially outer side of the tapered roller with respect to the center of gravity of the tapered roller.

Abstract: A tapered roller bearing includes an inner ring, an outer ring, a plurality of tapered rollers, and an annular cage having a plurality of cage pockets. Each of the cage pockets has a retainer configured to permit displacement of the tapered roller in a direction with a component in a radial direction, and restrict detachment of the tapered roller to an outer side in the radial direction by bringing the retainer into contact with a part of an outer peripheral surface of the tapered roller. The cage pockets include a first cage pocket having a first retainer with which a permissible amount of the displacement is a first displacement amount, and a second cage pocket having a second retainer with which the permissible amount of the displacement is a second displacement amount smaller than the first displacement amount.

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin.

Abstract: An inner ring unit includes an inner ring, a plurality of tapered rollers, and a cage having an annular shape. The cage includes a plurality of cage bars. The cage includes a stopper portion that is provided to protrude from an axial intermediate portion of the cage bar in the circumferential direction of the cage and configured to hinder the tapered rollers from falling off toward a radially outer side by bringing an axial intermediate portion on an outer peripheral surface of each tapered roller housed in a pocket into contact with the stopper portion. The axial intermediate portion on the outer peripheral surface of the tapered roller is a portion that is disposed on a one axial side and on the radially outer side of the tapered roller with respect to the center of gravity of the tapered roller.

Abstract: The purpose of the present invention is to provide a novel compound which is useful as a plasticizer that has improved heat resistance and cold resistance, while having good inherent plasticization performance as a plasticizer, or which is useful as a stabilizer for chlorine-containing resins. The inventors have found that a novel epoxycyclohexane dicarboxylic acid diester having a specific structure, which has an epoxy group in the molecular structure and has improved cold resistance and heat resistance, enables the achievement of the above-described purpose, and have been able to achieve a novel compound that is useful as a plasticizer and as a stabilizer.

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided. A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin.

Abstract: A rolling bearing has a pair of inner rings and an annular groove provided on an outer circumference of a portion where end portions of the pair of inner rings abut against each other. A seal member for a rolling bearing has an elastic portion. The seal member for a rolling bearing is mounted in the annular groove. The elastic portion has an annular proximal end portion that is fixed to one axial end side of the annular groove and an annular extending portion extending from the proximal end portion towards the other axial end side and having on an inner circumference thereof a sliding contact lip configured to be brought into sliding contact with the other axial end side of the annular groove.

Abstract: An object of the present invention is to provide a plasticizer for vinyl chloride-based resin superior in cold resistance and volatility resistance, and desirable in flexibility, fogging resistance, heat discoloration resistance, and weather resistance, and to also provide a vinyl chloride-based resin composition comprising the plasticizer. An ester obtained by reacting a specific carboxylic acid or a derivative thereof with a C9 saturated aliphatic alcohol at a specific proportion is superior in cold resistance and volatility resistance, and desirable in flexibility, fogging resistance, heat discoloration resistance, and weather resistance. Therefore, if becomes possible to obtain a vinyl chloride-based resin composition applicable to automobile parts, medical materials, or the like, as well as a molded article of the vinyl chloride-based resin composition.

Abstract: A rolling bearing has a pair of inner rings and an annular groove provided on an outer circumference of a portion where end portions of the pair of inner rings abut against each other. A seal member for a rolling bearing has an elastic portion. The seal member for a rolling bearing is mounted in the annular groove. The elastic portion has an annular proximal end portion that is fixed to one axial end side of the annular groove and an annular extending portion extending from the proximal end portion towards the other axial end side and having on an inner circumference thereof a sliding contact lip configured to be brought into sliding contact with the other axial end side of the annular groove.

Abstract: The purpose of the present invention is to provide a novel compound which is useful as a plasticizer that has improved heat resistance and cold resistance, while having good inherent plasticization performance as a plasticizer, or which is useful as a stabilizer for chlorine-containing resins. The inventors have found that a novel epoxycyclohexane dicarboxylic acid diester having a specific structure, which has an epoxy group in the molecular structure and has improved cold resistance and heat resistance, enables the achievement of the above-described purpose, and have been able to achieve a novel compound that is useful as a plasticizer and as a stabilizer.

Abstract: A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10?2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.

Abstract: A terminal modified polyethylene terephthalate resin has an intrinsic viscosity of 0.5 to 1.8 dl/g, a melting point of 245° C. to 270° C., and a melt viscosity ?(Pa·s) at 300° C. and satisfies inequality (A): ??4×e(0.000085×Mw) (A) wherein Mw represents a weight average molecular weight relative to a molecular weight of standard polymethyl methacrylate, as determined by gel permeation chromatography using hexafluoroisopropanol (with 0.

Abstract: A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10?2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.