Abstract: To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti (titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to forma barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.

Abstract: To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti (titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to forma barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.

Abstract: To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti(titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to form a barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.

Abstract: To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti(titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to form a barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.

Abstract: A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample. Laser light (2) emitted therefrom should be of wavelength larger in value than a wavelength &lgr; calculated as follows: &lgr;=h·c/Eg where h is Planck's constant, c represents speed of light and Eg represents band gap. When the semiconductor as a sample is silicon, the band gap thereof is 1.12 eV, thus calculating the wavelength &lgr; at 1.107 &mgr;m. The laser diode (1a) should be such that the laser light (2) emitted therefrom is of wavelength larger in value than &lgr;. It is therefore allowed to avoid emission of light higher in energy level than the band gap of silicon as a sample and eventually, avoid generation of photoelectric current in the sample.

Abstract: A failure analysis device and a failure analysis method which enable easily a specification of a position of a failure point which is obtained from a back side upon a wiring pattern image which is obtained from a front side is provided.

Abstract: A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample.

Abstract: It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9).

Abstract: A semiconductor device inspecting method is provided which can detect electric faults in an in-line inspection. The positive electrode of a variable DC power supply (2) is connected to the back or a peripheral portion of a semiconductor substrate (4) and the negative electrode of the variable DC power supply (2) is connected to a conductive cantilever (3). A scan is performed with a given forward bias voltage (e.g. 1.0 V) applied between the cantilever (3) and the semiconductor substrate (4) and with the cantilever (3) in contact with a target contact plug (9). The current flowing through the cantilever (3) is then monitored with an ammeter (1) to obtain a current characteristic of each contact plug, making it possible to detect conduction faults which cannot be detected by simply observing the configuration.

Abstract: It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9) (FIG. 1).

Abstract: A part of a gate insulation film between a semiconductor substrate and an exposed gate electrode of a semiconductor device is partially and stepwise etched away. A voltage is applied between the semiconductor substrate and the gate electrode in a chemical wet etching system at each step. An anode oxide film is formed on the surface of the gate electrode in a step, when a defect is included in a gate oxide film. The gate electrode is etched away in another step, when a defect is not included in the gate oxide film. A position of a defect in the gate insulation film is detected from the difference in the area of the gate insulation film when an anode oxide film is formed on the gate electrode, and when the gate electrode is etched away.

Abstract: A semiconductor device (100) including a silicon substrate (1), a gate oxide film (2) formed on the silicon substrate (1) and having a defect (3) and a dielectric breakdown voltage failure portion (4), and a polysilicon film (5) formed on the gate oxide film (2) is immersed in a chemical etchant (7) in a wet etching apparatus (9). With the silicon substrate (1) serving as an anode, a DC voltage source (6) of the wet etching apparatus (9) applies voltage to the silicon substrate (1) to perform anode oxidation. Passivation layers (10) are formed on parts of the surface of the polysilicon film (5) which overlies the defect (3) and dielectric breakdown voltage failure portion (4) but are not formed on the surface of the polysilicon film (5) in regions insulated by the gate oxide film (2). The polysilicon film (5) in the regions on which the passivation layers (10) are not formed is removed by the chemical etchant (7).

Abstract: A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at a region through which electrons move in data writing and erasing operations. In the semiconductor memory device, nitride films having a thickness larger than that of a first gate oxide film are formed on a drain impurity diffusion layer and a source impurity diffusion layer to surround the first gate oxide film. A floating gate electrode has opposite ends protruded over the nitride films.

Abstract: A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at a region through which electrons move in data writing and erasing operations. In the semiconductor memory device, nitride films having a thickness larger than that of a first gate oxide film are formed on a drain impurity diffusion layer and a source impurity diffusion layer to surround the first gate oxide film. A floating gate electrode has opposite ends protruded over the nitride films.