Abstract: A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of ?15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Abstract: A semiconductor light-emitting device has a first conductivity type semiconductor layer, a luminous layer formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer formed on the luminous layer, and a transmissive semiconductor layer formed on the second conductivity type semiconductor layer. The transmissive semiconductor layer is pervious to light coming from the luminous layer. The second conductivity type semiconductor layer and the transmissive semiconductor layer have different carrier concentrations, and the carrier concentration of the second conductivity type semiconductor layer is higher than the carrier concentration of the transmissive semiconductor layer.

Abstract: A light emitting diode is composed of a p-type GaP substrate 12 and layers laminated on the p-type GaP substrate 12, including a p-type GaP contact layer 13, a p-type AlInP second cladding layer 14, a p-type AlGaInP active layer 15, an n-type AlInP first cladding layer 16 and an n-type AlGaAs current diffusion layer 17. The entire lateral surfaces of the p-type GaP substrate 12 are processed into a roughened state by a dicing blade. The light emitting diode has high light intensity and its surface can be roughened under any circumstances regardless of its material and orientation so that characteristic failures can be prevented from occurring.

Abstract: A semiconductor light-emitting device has a first conductivity type semiconductor layer (3, 4), a luminous layer (5) formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer (8) formed on the luminous layer, and a transmissive substrate (9) which is formed on the second conductivity type semiconductor layer (8) and is pervious to light coming from the luminous layer (5). The transmissive substrate (9) has a carrier concentration lower than that of the second conductivity type semiconductor layer (8).

Abstract: A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of ?15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Abstract: A manufacturing method for a semiconductor light emitting device is provided. The method includes preparing a first wafer in which at least one semiconductor layer including the emitter layer is formed; disposing a second wafer transparent to an emission wavelength of the emitter layer on the surface of the first wafer; providing a bonding failure prevention structure to at least either the first wafer or the second wafer for preventing bonding failures of the first wafer and the second wafer; and applying compressive force to a contact face between the first wafer and the second wafer while at the same time, heating the contact face. The first and second wafers can be bonded across their entire surfaces without causing bonding failure.

Abstract: A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.

Abstract: A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.