Abstract: The present invention is based on a polyimide precursor having unit structures represented by general formula (1) and unit structures represented by general formula (2), provides a polyimide precursor for which film whitening, cracking and bubbling do not occur regardless of film baking conditions, and provides a flexible TFT array, a flexible color filter, and a flexible substrate with a gas barrier layer using the polyimide precursor, and a flexible display device, etc. using same. (In general formulas (1) and (2), X1-X4 each independently represents a hydrogen atom, C1 to C10 monovalent organic group or C1 to C10 monovalent alkylsilyl group. R1 is represented by general formula (3) and R2 is represented by general formula (4).) (In general formula (4), R3 and R4 each independently represents a C1 to C10 monovalent organic group.

Abstract: The present invention is based on a polyimide precursor having unit structures represented by general formula (1) and unit structures represented by general formula (2), provides a polyimide precursor for which film whitening, cracking and bubbling do not occur regardless of film baking conditions, and provides a flexible TFT array, a flexible color filter, and a flexible substrate with a gas barrier layer using the polyimide precursor, and a flexible display device, etc. using same. (In general formulas (1) and (2), X1-X4 each independently represents a hydrogen atom, C1 to C10 monovalent organic group or C1 to C10 monovalent alkylsilyl group. R1 is represented by general formula (3) and R2 is represented by general formula (4).) (In general formula (4), R3 and R4 each independently represents a C1 to C10 monovalent organic group.

Abstract: To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.

Abstract: A carbon nanotube composite in which a conjugated polymer containing repeating units containing a fused heteroaryl unit having a nitrogen-containing double bond in the ring, and a thiophene unit is attached to at least a part of the surface of a carbon nanotube. The present invention reduces the hysteresis of a field-effect transistor having a semiconductor layer containing a carbon nanotube.

Abstract: The present invention provides an organic semiconductor composite containing a certain thiophene compound and carbon nanotubes, which can be formed into a film by a coating process such as an inkjet process, has high charge mobility and can maintain a high on/off ratio even in air, an organic transistor material and an organic field effect transistor.

Abstract: An organic El element includes an organic compound layer including at least an emissive layer interposed between a pair of electrodes, wherein the emissive layer includes a naphthacene derivative and an amount of a naphthacene precursor compound present in the emissive layer is 5.0 parts by weight or less with respect to 100 parts by weight of the naphthacene derivative.

Abstract: A photovoltaic device with high photoelectric conversion efficiency includes an electron donating organic material for photovoltaic devices containing a conjugated polymer represented by formula (1): wherein R1 to R10 may be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an alkoxy group and an aryl group; R11 and R12 may be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group and halogen; W, X, Y and Z may be the same or different from each other and are each selected from the group consisting of a single bond, an arylene group, a heteroarylene group, an ethenylene group, and an ethynylene group; m is 0 or 1; n is within a range of 1 to 1000.

Abstract: A light emitting device material precursor represented by the Formula (1): (wherein R1 to R6 each may be the same or different and is selected from the group consisting of hydrogen, alkyl groups, cycloalkyl groups, alkenyl groups, cycloalkenyl groups, alkoxy groups, alkylthio groups, arylether groups, aryl thioether groups, aryl groups and heteroaryl groups, with the proviso that at least one of R1 to R6 has a fused aromatic hydrocarbon having two or more rings).

Abstract: A carbon nanotube composite in which a conjugated polymer containing repeating units containing a fused heteroaryl unit having a nitrogen-containing double bond in the ring, and a thiophene unit is attached to at least a part of the surface of a carbon nanotube. The present invention reduces the hysteresis of a field-effect transistor having a semiconductor layer containing a carbon nanotube.

Abstract: To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.

Abstract: The present invention provides an organic semiconductor composite containing a certain thiophene compound and carbon nanotubes, which can be formed into a film by a coating process such as an inkjet process, has high charge mobility and can maintain a high on/off ratio even in air, an organic transistor material and an organic field effect transistor.

Abstract: A photovoltaic device with high photoelectric conversion efficiency includes an electron donating organic material for photovoltaic devices containing a conjugated polymer represented by formula (1): wherein R1 to R10 may be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an alkoxy group and an aryl group; R11 and R12 may be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group and halogen; W, X, Y and Z may be the same or different from each other and are each selected from the group consisting of a single bond, an arylene group, a heteroarylene group, an ethenylene group, and an ethynylene group; m is 0 or 1; n is within a range of 1 to 1000.