Patents by Inventor Yukari Miyairi

Yukari Miyairi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor, method of manufacturing the same, and image display device equipped with thin film transistor
    Patent number: 8963147
    Abstract: A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: February 24, 2015
    Assignee: Toppan Printing Co., Ltd.
    Inventors: Chihiro Imamura, Yukari Miyairi, Hiroaki Koyama
  • THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND IMAGE DISPLAY DEVICE EQUIPPED WITH THIN FILM TRANSISTOR
    Publication number: 20140217396
    Abstract: A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.
    Type: Application
    Filed: September 21, 2011
    Publication date: August 7, 2014
    Applicant: TOPPAN PRINTING CO., LTD.
    Inventors: Chihiro Imamura, Yukari Miyairi, Hiroaki Koyama