Abstract: A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer.

Abstract: A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

Abstract: A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof.

Abstract: A transparent conductive semiconductor substrate 70 comprising a light emitting layer section 24 is directly bonded on one of main surfaces on a main compound semiconductor layer 50 composed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layer 50 and the transparent conductive semiconductor substrate 70 is adjusted to be equal to or greater than 1×1014 atoms/cm2 and equal to or less than 2×1015 atoms/cm2. Herewith, it provides a light emitting device capable of sufficiently decreasing boundary surface resistance between the light emitting layer section and the transparent conductive semiconductor substrate.

Abstract: A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof.

Abstract: A fabric for three-dimensional design preparation which can afford sharp and extremely fine line-like concaves of 1 mm or less in width or smooth curvilinear concaves is provided by a three-dimensional design preparing process using ink jet printing for example. The fabric is a pile fabric comprising a pile portion and a ground weave portion, wherein a single fiber size of pile yarn which constitutes the pile portion is 0.05 to 3.5 dtex, the pile is distributed uniformly at a proportion of 2% to 20% per unit area on the pile surface side, and in a vertical section of the pile fabric, the ratio of the area of the pile yarn relative to the sectional area of a 50% portion of an average entire pile height from the pile surface side is 40% to 60%.

Abstract: A colored sheet material is provided which has a colored resin layer as an essential component and which is difficult to rise in its surface temperature even when exposed to an infrared ray contained for example in sunlight for a long time and undergoes little change in color no matter what light may be irradiated, i.e., with reduced color rendering. As the colored resin layer, which is formed on a sheet base of the colored sheet material, there is used a colored resin layer having an average absorptance of not higher than 30% in the wavelength region of 780 to 1800 nm and an average absorptance of not lower than 60% in the wavelength region of 610 to 780 nm.

Abstract: An aqueous sericin solution and a polar organic solvent are mixed together to prepare a sericin-containing solution, then the sericin-containing solution is added into a synthetic resin solution, followed by drying, to produce an synthetic leather wherein sericin is present as discrete particles of not larger than 3 ?m in diameter within the synthetic resin of a skin layer almost uniformly at least 1.0×106 particles per square centimeter. The skin layer of the synthetic leather has a soft and moist touch like that of the natural leather and is superior in moisture absorbing and releasing properties and further superior in processing stability.