Abstract: A wiring substrate of the present disclosure includes a substrate, a first conductive layer, a first insulating layer, and a second conductive layer. The substrate has an insulating surface. The first conductive layer is disposed on the substrate and includes a first part and a second part. The first part has a first thickness. The second part has a second thickness thinner than the first thickness and is adjacent to the first part. The first insulating layer is disposed on the first part and apart from the second part. The first insulating layer is disposed between the second conducting layer and the first part.

Abstract: A wiring substrate of the present disclosure includes a substrate, a first conductive layer, a first insulating layer, and a second conductive layer. The substrate has an insulating surface. The first conductive layer is disposed on the substrate and includes a first part and a second part. The first part has a first thickness. The second part has a second thickness thinner than the first thickness and is adjacent to the first part. The first insulating layer is disposed on the first part and apart from the second part. The first insulating layer is disposed between the second conducting layer and the first part.

Abstract: The same digital data is recorded with highly integrated manner on a plurality of media able to durably hold information over long-term. A minute graphic pattern indicating data bit information is drawn on a resist layer formed on a quartz glass substrate by exposing a beam and developed so as to prepare a master medium (M1), which comprises the quartz glass substrate having a minute recess and protrusion structure formed by etching where the remaining resist are used as a mask (FIG. (a)). The recess and protrusion structure recorded on the master medium (M1) is shaped and transferred onto a flexible recording medium (G2) on which a UV curable resin layer (61) is formed, whereby an intermediate medium (M2) is prepared (FIGS. (b)-(d)).

Abstract: A data storage medium includes a convexoconcave structure formed in a storage area which is set on a first surface of a quartz glass substrate. The storage area includes a plurality of unit storage areas which are arrayed at least in one direction, and non-data storage areas which are disposed between the unit storage areas, which are adjacent to each other. The convexoconcave structure includes unit data patterns, address patterns and boundary patterns. The unit data patterns are formed in the plurality of unit storage areas respectively in the array sequence of the unit storage areas, and the address patterns are formed in the non-data storage areas so as to correspond to each of the unit storage areas in which the unit data patterns are formed respectively.

Abstract: An imprint method includes, in the peeling step of peeling a mold off the material layer to be transferred, a region-of-contact recognition operation of recognizing and determining a region of contact of the mold with the material layer to be transferred, a center-of-gravity locating operation of determining a center of gravity of a morphology of the thus recognized region of contact on the basis of that morphology, and a peeling operation of determining a point of force for applying peeling force to the mold or the imprinting substrate in relation to the center of gravity determined by the center-of-gravity locating operation, thereby acting the peeling force on the point of force.

Abstract: The invention makes it possible to perform highly integrated recording of information and read out the information in a universal method while maintaining long-term durability. Digital data (D) to be stored is divided by a prescribed bit length u to create a plurality of unit data (U1 to U4). The bits constituting the unit data (U1) are arranged in a two-dimensional matrix to create a unit bit matrix (B(U1)), which is converted to a geometrical pattern to thereby create a unit bit graphic pattern (P(U1)). Further, alignment marks (Q) are arranged at four corners to create a unit recording graphic pattern (R(U1)). A drawing pattern (P(E)) is created as an assembly of the unit recording graphic patterns (R(U1) to R(U4)), and is provided to an electron beam lithography system as drawing data (E) whereby a pattern is drawn in a resist layer on a glass substrate.

Abstract: A data storage medium includes a convexoconcave structure formed in a storage area which is set on a first surface of a quartz glass substrate. The storage area includes a plurality of unit storage areas which are arrayed at least in one direction, and non-data storage areas which are disposed between the unit storage areas, which are adjacent to each other. The convexoconcave structure includes unit data patterns, address patterns and boundary patterns. The unit data patterns are formed in the plurality of unit storage areas respectively in the array sequence of the unit storage areas, and the address patterns are formed in the non-data storage areas so as to correspond to each of the unit storage areas in which the unit data patterns are formed respectively.

Abstract: The same digital data is recorded with highly integrated manner on a plurality of media able to durably hold information over long-term. A minute graphic pattern indicating data bit information is drawn on a resist layer formed on a quartz glass substrate by exposing a beam and developed so as to prepare a master medium (M1), which comprises the quartz glass substrate having a minute recess and protrusion structure formed by etching where the remaining resist are used as a mask (FIG. (a)). The recess and protrusion structure recorded on the master medium (M1) is shaped and transferred onto a flexible recording medium (G2) on which a UV curable resin layer (61) is formed, whereby an intermediate medium (M2) is prepared (FIGS. (b)-(d)).

Abstract: A method of manufacturing a PDMS sheet that ensures good adhesion, handleability and stability to metal thin films or metal patterns of any desired shape. Given a low-molecular-weight siloxane of a cyclic structure represented by [—Si(CH3)2O—]k where k is an integer of 3 to 20 inclusive, the polydimethylsiloxane sheet has a structure where the content of the low-molecular-weight siloxane at the pattern-formation surface is more than that of the low-molecular-weight siloxane at the base surface, and a spacing between the adjacent metal patterns is variable by deformation of the polydimethylsiloxane sheet.

Abstract: A PDMS sheet that ensures good adhesion, handleability and stability to metal thin films or metal patterns of any desired shape, an optical element that is kept against de-bonding or exfoliation of metal patterns and has high reliability as well as good handleability and stability, and manufacturing methods thereof. The inventive optical element comprises a polydimethyl-siloxane sheet having a pattern-formation surface defined by one surface and a base surface defined by another surface, and a plurality of metal patterns positioned on the pattern-formation surface.

Abstract: A method of manufacturing a PDMS sheet that ensures good adhesion, handleability and stability to metal thin films or metal patterns of any desired shape. Given a low-molecular-weight siloxane of a cyclic structure represented by [—Si(CH3)2O—]k where k is an integer of 3 to 20 inclusive, the polydimethylsiloxane sheet has a structure where the content of the low-molecular-weight siloxane at the pattern-formation surface is more than that of the low-molecular-weight siloxane at the base surface, and a spacing between the adjacent metal patterns is variable by deformation of the polydimethylsiloxane sheet.

Abstract: An imprint method includes, in the peeling step of peeling a mold off the material layer to be transferred, a region-of-contact recognition operation of recognizing and determining a region of contact of the mold with the material layer to be transferred, a center-of-gravity locating operation of determining a center of gravity of a morphology of the thus recognized region of contact on the basis of that morphology, and a peeling operation of determining a point of force for applying peeling force to the mold or the imprinting substrate in relation to the center of gravity determined by the center-of-gravity locating operation, thereby acting the peeling force on the point of force.

Abstract: An imprint method includes, in the peeling step of peeling a mold off the material layer to be transferred, a region-of-contact recognition operation of recognizing and determining a region of contact of the mold with the material layer to be transferred, a center-of-gravity locating operation of determining a center of gravity of a morphology of the thus recognized region of contact on the basis of that morphology, and a peeling operation of determining a point of force for applying peeling force to the mold or the imprinting substrate in relation to the center of gravity determined by the center-of-gravity locating operation, thereby acting the peeling force on the point of force.

Abstract: An imprint mold that has, in a pattern region on a principal surface of a base material, a main pattern with an uneven structure and a dummy pattern with an uneven structure for assisting transfer of the main pattern, wherein at least one end portion of a concave structure or a convex structure of the dummy pattern reaches an outermost periphery of the pattern region, and a closed region that is surrounded with one or more concave structures or convex structures of the dummy pattern does not exist in the pattern region when the imprint mold is planarly viewed.

Abstract: A method for producing a fine convex pattern structure having a fine convex pattern projecting from a flat portion in a predetermined direction with respect to the flat portion includes: using an imprint mold that has a fine concave pattern corresponding to the fine convex pattern and forming the fine convex pattern projecting from the flat portion under a condition in which the fine convex pattern is inclined to the flat portion side from the predetermined direction; and causing the fine convex pattern to project in the predetermined direction with respect to the flat portion by inducing electric charges at least on the inclined fine convex pattern.

Abstract: A pattern-formation process including: providing a substrate material having on a major surface a difficult-to-access recess formed by a 1st mask; depositing a 2nd mask having a higher etching resistance than the 1st mask by physical evaporation on the upper surface of the 1st mask and peripherally on a side of the recess, the second mask forming a series of films; and etching the substrate material via the 1st and 2nd mask, wherein forming the 2nd mask includes depositing the 2nd mask material by physical evaporation vertically onto the major surface of the substrate material; and the recess is sized such that, upon deposition, the 2nd mask material cannot substantially reach the bottom of the recess. Accordingly, portions of the recesses formed by the etching masks can be processed by etching even when those recesses are 25 nm or less, and especially 20 nm or less in size.

Abstract: The object of the invention is to provide a mold that is capable of high-precision, stable patterning, and improved in terms of handleability as well, and a manufacturing method thereof. The mold of the invention has a pattern-formation surface defined by one surface, wherein the pattern-formation layer has a projection-and-depression structure area for patterning, and a base surface defined by another surface. At least the pattern-formation layer and the base surface each comprise a polydimethylsiloxane layer. Given a low-molecular-weight siloxane of a cyclic structure represented by [—Si(CH3)2O—]k where k is an integer of 3 to 20 inclusive, the polydimethylsiloxane layer positioned on the pattern-formation layer comprises a high-content polydimethylsiloxane layer containing the low-molecular-weight siloxane in a larger amount, and the polydimethylsiloxane layer positioned on the base surface comprises a low-content polydimethylsiloxane layer containing the low-molecular-weight siloxane in a smaller amount.

Abstract: A method for producing a fine convex pattern structure having a fine convex pattern projecting from a flat portion in a predetermined direction with respect to the flat portion includes: using an imprint mold that has a fine concave pattern corresponding to the fine convex pattern and forming the fine convex pattern projecting from the flat portion under a condition in which the fine convex pattern is inclined to the flat portion side from the predetermined direction; and causing the fine convex pattern to project in the predetermined direction with respect to the flat portion by inducing electric charges at least on the inclined fine convex pattern.

Abstract: A system for measuring a shape, includes an external storage unit storing tolerances of first and second shape factors defining a design shape of a measuring object; a first measuring tool measuring the first shape factor of the measuring object to obtain measurement data; and a measurement processing unit determining a shape of the measuring object. The measurement processing unit includes; a comparison module comparing the measurement data of the first shape factor with the tolerance of the first shape factor; a verification module composing a predicted shape using the measurement data and verifying whether the predicted shape is formed as a figure; a calculation module calculating predicted data of the second shape factor from the predicted shape; and a determination module determining a measurement shape by comparing the predicted data with the tolerance of the second shape factor.

Abstract: The invention provides a pattern-formation process comprising a step of providing a substrate material having on a major surface a difficult-to-access recess formed by the presence of a 1st mask, a step of using a physical evaporation method to deposit a 2nd mask-formation material, which is higher than the 1st mask in terms of etching resistance, from a side having the 1st mask formed on it all over the upper surface of the 1st mask and peripherally on a side of the difficult-to-access recess to form the 2nd mask comprising a series of films, and a step of etching the substrate material via the 1st mask and the 2nd mask, wherein the 2nd mask-formation step comprises operation of flying the 2nd mask-formation material by the physical evaporation method vertically to the major surface of the substrate material, and the difficult-to-access recess is sized such that when the 2nd mask-formation material is flown and deposited by the physical evaporation method vertically to the major surface of the substrate mate