Abstract: A method for producing a phosphor layer-covered LED includes an LED disposing step of disposing an LED at one surface in a thickness direction of a support sheet; a layer disposing step of disposing a phosphor layer formed from a phosphor resin composition containing an active energy ray curable resin capable of being cured by application of an active energy ray and a phosphor at the one surface in the thickness direction of the support sheet so as to cover the LED; a curing step of applying an active energy ray to the phosphor layer to be cured; a cutting step of cutting the phosphor layer corresponding to the LED to produce a phosphor layer-covered LED including the LED and the phosphor layer covering the LED; and an LED peeling step of, after the cutting step, peeling the phosphor layer-covered LED from the support sheet.

Abstract: A method for producing a reflecting layer-phosphor layer-covered LED includes a disposing step of disposing a reflecting layer at one side in a thickness direction of a support; a reflecting layer covering step of, after the disposing step, disposing an LED having a terminal at one surface thereof at the one side in the thickness direction of the support so as to allow the one surface of the LED to be covered with the reflecting layer; and a phosphor layer covering step of forming a phosphor layer so as to cover at least the other surface of the LED.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.

Abstract: A phosphor encapsulating sheet, for encapsulating a light emitting diode element, includes a phosphor layer, an encapsulating layer formed at one side in a thickness direction of the phosphor layer, and an adhesive layer formed at the other side in the thickness direction of the phosphor layer for being adhered to a cover layer.

Abstract: An encapsulating sheet, encapsulating an optical semiconductor element, includes a first layer which contains a phosphor and a second layer which contains a phosphor, is laminated on the first layer, and encapsulates the optical semiconductor element. The ratio of the volume of the phosphor in the first layer to that of the phosphor in the second layer is 90:10 to 55:45.