Patents by Inventor Yuki Hosaka

Yuki Hosaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220108871
    Abstract: A plasma processing apparatus includes: a main coil disposed on or above a plasma processing chamber; and a sub-coil assembly disposed radially inside or outside the main coil. The sub-coil assembly includes a first spiral coil and a second spiral coil. Each turn of the first spiral coil and each turn of the second spiral coil are alternately arranged in a vertical direction. A first upper terminal of the first spiral coil is connected to a ground potential via one or more capacitors, and a first lower terminal of the first spiral coil is connected to the ground potential. A second upper terminal of the second spiral coil is connected to the ground potential via one or more capacitors or one or more other capacitors, and a second lower terminal of the second spiral coil is connected to the ground potential.
    Type: Application
    Filed: October 6, 2021
    Publication date: April 7, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Takehisa Saito, Naoki Fujiwara, Kaori Fujiwara, Daisuke Kurashina, Yuki Hosaka
  • Publication number: 20220102119
    Abstract: A plasma processing apparatus comprising a processing chamber, a dielectric, an antenna, and a first to third electromagnet groups is disclosed. In the processing chamber, a mounting table having a mounting surface is included and a plasma process is performed. A surface of the dielectric faces the mounting surface. The antenna, provided on the opposite surface of the dielectric, introduces an electric field into the processing table through the dielectric to form plasma. The first electromagnet group, provided at a position higher than the mounting surface on an outer perimeter of the processing chamber, forms a first magnetic field above the mounting surface. The second electromagnet group, provided inside the mounting table along an outer perimeter thereof, and the third electromagnet group, provided at a position corresponding to the second electromagnet group on the outer perimeter of the processing chamber, cooperate with each other to form a second magnetic field around the mounting surface.
    Type: Application
    Filed: September 24, 2021
    Publication date: March 31, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hwajun JUNG, Mitsunori OHATA, Yuki HOSAKA
  • Publication number: 20210384013
    Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including an electrostatic chuck; a first ring disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck and including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than that of the intermediate annular portion, a top surface of the outer annular portion being higher than that of the inner annular portion; a second ring disposed on the intermediate annular portion; and an actuator configured to vertically move the second ring to maintain a top surface of the second ring at a first height greater than a height of the top surface of the inner annular portion and less than a height of the top surface of the outer annular portion.
    Type: Application
    Filed: June 4, 2021
    Publication date: December 9, 2021
    Inventors: Hwajun Jung, Masahiro Suzuki, Yuki Hosaka, Mitsunori Ohata
  • Publication number: 20210375597
    Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting cable and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
    Type: Application
    Filed: August 13, 2021
    Publication date: December 2, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA
  • Publication number: 20210320009
    Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Patent number: 11101114
    Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: August 24, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima
  • Patent number: 10950467
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: March 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Publication number: 20200266034
    Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
    Type: Application
    Filed: May 7, 2020
    Publication date: August 20, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Patent number: 10636683
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: April 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Patent number: 10541142
    Abstract: A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: January 21, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuya Matsumoto, Yuki Hosaka, Mitsunori Ohata, Takashi Yamamoto
  • Patent number: 10510514
    Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: December 17, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Mayo Uda, Takashi Kubo
  • Publication number: 20190131137
    Abstract: A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.
    Type: Application
    Filed: April 10, 2017
    Publication date: May 2, 2019
    Applicant: Tokyo Electron Limited
    Inventors: Kazuya MATSUMOTO, Yuki HOSAKA, Mitsunori OHATA, Takashi YAMAMOTO
  • Publication number: 20190131136
    Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
    Type: Application
    Filed: December 2, 2016
    Publication date: May 2, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Publication number: 20190131158
    Abstract: A plasma processing apparatus includes a chamber body that provides a chamber, a support structure which supports a workpiece inside the chamber body, and a first drive device which rotates the support structure inside the chamber body about a first axis that extends in a direction orthogonal to the vertical direction. The support structure includes a holding unit including an electrostatic chuck which holds the workpiece and which is rotatable around a second axis orthogonal to the first axis, a container provided below the holding unit, and a second drive device which rotates the holding unit around the second axis. The container has a cylindrical container body and a bottom cover configured to close a bottom side opening in the container body. The bottom cover is detachable from the container body.
    Type: Application
    Filed: April 10, 2017
    Publication date: May 2, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuya MATSUMOTO, Yuki HOSAKA, Mitsunori OHATA, Takashi YAMAMOTO
  • Patent number: 10192774
    Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: January 29, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
  • Publication number: 20170301518
    Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Mayo UDA, Takashi KUBO
  • Publication number: 20170301568
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Application
    Filed: April 11, 2017
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA, Kenichi SHIMONO
  • Publication number: 20170301579
    Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 19, 2017
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
  • Publication number: 20170092513
    Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
    Type: Application
    Filed: June 5, 2015
    Publication date: March 30, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA
  • Patent number: 9589771
    Abstract: Disclosed is a plasma processing apparatus capable of more accurately controlling plasma. The plasma processing apparatus includes a shower head provided within a processing chamber, in which a substrate accommodated therein is processed, to be faced to a mounting table for mounting the substrate and supply gas from a plurality of gas discharging holes provided on a facing surface that faces the mounting table toward a substrate in a shower pattern; a plurality of exhaust holes that passes through a surface located at an opposite side to the facing surface of the shower head; a circular plate-like body that is disposed parallel to the opposite surface in a exhaust space that communicates with the exhaust holes distributed at the opposite surface and made of a conductive material; and a moving unit configured to move the plate-like body to change a distance between the exhaust holes and the plate-like body.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: March 7, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Naokazu Furuya, Mitsunori Ohata