Abstract: A plasma processing apparatus including a metallic base material disposed inside a wafer stage and having a cylindrical shape or a circular plate shape; a dielectric film disposed on an upper surface of the base material; a film-shaped heater disposed inside the dielectric film; a refrigerant flow path disposed in a concentric shape or in a spiral shape about a center of the base material in the base material and allowing a refrigerant to flow therethrough; and at least one arc-shaped space multiply disposed about the center in the base material between the refrigerant flow path and the heater and having an inside reduced to a predetermined degree of vacuum and sealed. A region of a portion of the base material between the disposed arc-shaped spaces is projected and overlapped on a region of an intermediate portion of the base material that partitions two of the adjacent refrigerant flow paths.

Abstract: A plasma processing apparatus for manufacturing multi-zone heater layer electrodes including a first heater layer disposed in a dielectric film covering an upper surface of a sample table, the first heater layer including a plurality of film-shaped heaters each having a rectangular shape; and a plurality of temperature sensors disposed below the rectangular regions of the first heater layer and corresponding to circuit patterns of a plurality of semiconductor devices formed on an upper surface of a wafer, and include four regions each having one side facing an adjacent region, and with the film-shaped heaters disposed in the four regions being one set including four power supply paths and one return path, the four power supply paths being electrically each connected to one place of each of the film-shaped heaters of the set, and the one return path being electrically connected to another place of each of the film-shaped.