Patents by Inventor Yuki Mitsui

Yuki Mitsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10488788
    Abstract: The purpose of the present invention is to provide a transfer member for an image forming device for which the transfer properties for recording media having recesses and protrusions on the surface, such as embossed paper, are superior. The transfer member for an image forming device is characterized by including a base material layer and a coating layer formed from an inorganic/organic hybrid material provided on the surface of the base material layer, the thickness of the coating layer being 10 ?m or less, and the micro hardness of the coating layer surface being 140 mN/mm2 or greater when measured by a method complying with ISO 14577-1 using a Berkovich indenter with a pressing depth of 0.05 ?m.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: November 26, 2019
    Assignee: Gunze Limited
    Inventors: Satoshi Mitsui, Yuki Okazaki
  • Publication number: 20130184346
    Abstract: Provided is a diacylglycerol-containing fat or oil composition in which a precipitation of crystal is inhibited even under low temperature. The fat or oil composition comprises the following components (A) and (B): (A) a polyglycerin fatty acid ester having an average polymerization degree of glycerin of 20 or more; and (B) 20 mass % or more of diacylglycerol.
    Type: Application
    Filed: September 13, 2011
    Publication date: July 18, 2013
    Applicant: KAO CORPORATION
    Inventors: Katsuyoshi Saito, Yuki Mitsui, Junya Moriwaki
  • Patent number: 8277560
    Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.
    Type: Grant
    Filed: March 19, 2003
    Date of Patent: October 2, 2012
    Assignees: National Institute of Advanced Industrial Science and Technology, Canon Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Showa Denko K.K., Sony Corporation, Tokyo Eectron Limited, Hitachi Kokusai Electric Inc., Panasonic Corporation, Mitsubishi Denki Kabushiki Kaisha, Renesas Electronics Corporation
    Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
  • Patent number: 7371898
    Abstract: A method for producing carbonyl fluoride by continuously supplying carbon monoxide and fluorine into a reaction chamber together with a diluent gas and letting them react with each other, where hydrogen fluoride or carbonyl fluoride is used as the diluent gas.
    Type: Grant
    Filed: June 9, 2006
    Date of Patent: May 13, 2008
    Assignee: Asahi Glass Company, Limited
    Inventor: Yuki Mitsui
  • Patent number: 7332628
    Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: February 19, 2008
    Assignees: National Institute of Advanced Industrial Science and Technology, Asahi Glass Company, Limited, Kanto Denka Kogyo Co., Ltd., Showa Denko Kabushiki Kaisha, Daikin Industries, Ltd., Hitachi Kokusai Electric Inc.
    Inventors: Yuki Mitsui, Taisuke Yonemura, Yutaka Ohira, Akira Sekiya
  • Patent number: 7322368
    Abstract: A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.
    Type: Grant
    Filed: August 26, 2002
    Date of Patent: January 29, 2008
    Inventors: Akira Sekiya, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura
  • Patent number: 7138364
    Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.
    Type: Grant
    Filed: January 28, 2003
    Date of Patent: November 21, 2006
    Assignees: Asahi Glass Company, Limited, Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Sony Corporation, Daikin Industries, Ltd., Hitachi Kokusai Electric Inc., Fujitsu Limited, Matsushita Electric Industrial Co., Ltd., Renesas Technology Corp., National Institute of Advanced Industrial Science and Technology
    Inventors: Yutaka Ohira, Yuki Mitsui, Taisuke Yonemura, Akira Sekiya
  • Patent number: 7125573
    Abstract: Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety. This preventive, ameliorant or remedy for hypertension comprises a coffee bean extract.
    Type: Grant
    Filed: July 11, 2002
    Date of Patent: October 24, 2006
    Assignee: Kao Corporation
    Inventors: Wataru Okawa, Yuki Mitsui, Takuya Watanabe, Yasuteru Eguchi, Hirokazu Takahashi, Atsushi Suzuki
  • Publication number: 20060229467
    Abstract: To provide a method for industrially producing COF2 in good yield. A method for producing carbonyl fluoride, which comprises continuously supplying carbon monoxide A and fluorine B together with a diluent gas into a reaction chamber 1 and letting them react with each other and which is characterized in that hydrogen fluoride or carbonyl fluoride is used as the diluent gas. An apparatus for producing carbonyl fluoride wherein carbon monoxide A and fluorine B are reacted to form carbonyl fluoride, which is characterized by comprising a means to supply carbon monoxide A, a means to supply fluorine B, a means to supply a diluent gas being hydrogen fluoride or carbonyl fluoride, and a reaction chamber.
    Type: Application
    Filed: June 9, 2006
    Publication date: October 12, 2006
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventor: Yuki Mitsui
  • Publication number: 20060194985
    Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.
    Type: Application
    Filed: March 12, 2004
    Publication date: August 31, 2006
    Applicant: Research Inst. Of Innovative Tech. For The Earth
    Inventors: Yuki Mitsui, Taisuke Yonemura, Yutaka Ohira, Akira Sekiya
  • Publication number: 20050252451
    Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined.
    Type: Application
    Filed: March 13, 2003
    Publication date: November 17, 2005
    Inventors: Tatsuro Beppu, Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
  • Publication number: 20040255854
    Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber and the side wall of a piping of an exhaust path or the like at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming can also be lessened and a cost can also be reduced.
    Type: Application
    Filed: April 27, 2004
    Publication date: December 23, 2004
    Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutada Ohira, Taisuke Yonemura, Akira Sekiya
  • Publication number: 20040250775
    Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced.
    Type: Application
    Filed: April 27, 2004
    Publication date: December 16, 2004
    Inventors: Katsuo Sakai, Seiji Okura, Masaji Sakamura, Kaoru Abe, Hitoshi Murata, Etsuo Wani, Kenji Kameda, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura, Akira Sekiya
  • Publication number: 20040173569
    Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.
    Type: Application
    Filed: December 11, 2003
    Publication date: September 9, 2004
    Inventors: Yutaka Ohira, Yuki Mitsui, Taisuke Yonemura, Akira Sekiya
  • Patent number: 6787053
    Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
    Type: Grant
    Filed: May 13, 2002
    Date of Patent: September 7, 2004
    Assignees: Asahi Glass Company, Limited, Anelva Corporation, Ulvac, Inc., Kanto Denka Kogyo Co., Ltd., Sanyo Electric Co., Ltd., Sony Corporation, Daikin Industries, Ltd., Tokyo Electron Limited, NEC Electronics Corporation, Hitachi Kokusai Electric Inc., Matsushita Electric Industrial Co., Ltd., Renesas Technology Corp.
    Inventors: Akira Sekiya, Yuki Mitsui, Ginjiro Tomizawa, Katsuya Fukae, Yutaka Ohira, Taisuke Yonemura
  • Publication number: 20040016441
    Abstract: The plasma cleaning gas for CVD chamber according to the present invention is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas comprises 100% by volume of fluorine gas which gas can generate plasma by electric discharge.
    Type: Application
    Filed: April 30, 2003
    Publication date: January 29, 2004
    Inventors: Akira Sekiya, Yuki Mitsui, Yutaka Ohira, Taisuke Yonemura
  • Publication number: 20030143846
    Abstract: This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.
    Type: Application
    Filed: December 27, 2002
    Publication date: July 31, 2003
    Inventors: Akira Sekiya, Katsuya Fukae, Yuki Mitsui, Ginjiro Tomizawa
  • Publication number: 20030001134
    Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases.
    Type: Application
    Filed: May 13, 2002
    Publication date: January 2, 2003
    Inventors: Akira Sekiya, Yuki Mitsui, Ginjiro Tomizawa, Katsuya Fukae, Yutaka Ohira, Taisuke Yonemura
  • Publication number: 20020192317
    Abstract: Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety.
    Type: Application
    Filed: July 11, 2002
    Publication date: December 19, 2002
    Applicant: KAO CORPORATION
    Inventors: Wataru Okawa, Yuki Mitsui, Takuya Watanabe, Yasuteru Eguchi, Hirokazu Takahashi, Atsushi Suzuki
  • Patent number: 6458392
    Abstract: Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety. This preventive, ameliorant or remedy for hypertension comprises a coffee bean extract.
    Type: Grant
    Filed: July 11, 2001
    Date of Patent: October 1, 2002
    Assignee: Kao Corporation
    Inventors: Wataru Okawa, Yuki Mitsui, Takuya Watanabe, Yasuteru Eguchi, Hirokazu Takahashi, Atsushi Suzuki