Patents by Inventor Yuki Niyama

Yuki Niyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor
    Patent number: 8072002
    Abstract: A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-xN (0.01?x?0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: December 6, 2011
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Yuki Niyama, Seikoh Yoshida, Hiroshi Kambayashi, Takehiko Nomura, Masayuki Iwami, Shinya Ootomo