Patents by Inventor Yuki Ojima
Yuki Ojima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230230886Abstract: To provide a technique capable of quantitatively grasping a change in three-dimensional shape including a cross-sectional shape of a pattern within a surface of a wafer or between wafers in a non-destructive manner before cross-sectional observation.Type: ApplicationFiled: December 14, 2022Publication date: July 20, 2023Applicant: Hitachi High-Tech CorporationInventors: Kenji YASUI, Mayuka OSAKI, Hitoshi NAMAI, Yuki OJIMA, Wataru NAGATOMO, Masami IKOTA, Maki KIMURA
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Publication number: 20160140287Abstract: A template creation device for a sample observation device for creating a template for image processing using design data includes a storage unit for storing process information in which information concerning a plurality of process processings is defined, and a template creation unit for processing the design data using the process information and creating the template for the image processing.Type: ApplicationFiled: May 19, 2014Publication date: May 19, 2016Inventors: Yuki OJIMA, Shigeki SUKEGAWA, Yuichi ABE, Toshikazu KAWAHARA, Wataru NAGATOMO, Shinji KUBO
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Patent number: 8487253Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: GrantFiled: November 18, 2011Date of Patent: July 16, 2013Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Publication number: 20120061566Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: Hitachi High-Technologies CorporationInventors: Minoru YAMAZAKI, Akira IKEGAMI, Hideyuki KAZUMI, Manabu YANO, Kazunari ASAO, Takeshi MIZUNO, Yuki OJIMA
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Patent number: 8080790Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: GrantFiled: February 25, 2009Date of Patent: December 20, 2011Assignee: Hitachi High-Technologies CorporationInventors: Minoru Yamazaki, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Patent number: 7723681Abstract: For the purpose of repeatedly observing the bottom of a contact hole with a high aspect ratio, the potential of an electrostatic charge in each of a pattern to be observed and a vicinity of a range to be observed is stabilized by pre-charging a range on which to irradiate a beam of electrons while changing the range on a step-by-step basis.Type: GrantFiled: October 12, 2007Date of Patent: May 25, 2010Assignee: Hitachi High-Technologies CorporationInventors: Yuki Ojima, Satoru Iwama, Akira Ikegami
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Publication number: 20090224170Abstract: An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.Type: ApplicationFiled: February 25, 2009Publication date: September 10, 2009Inventors: Minoru YAMAZAKI, Akira Ikegami, Hideyuki Kazumi, Manabu Yano, Kazunari Asao, Takeshi Mizuno, Yuki Ojima
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Publication number: 20080265160Abstract: For the purpose of repeatedly observing the bottom of a contact hole with a high aspect ratio, the potential of an electrostatic charge in each of a pattern to be observed and a vicinity of a range to be observed is stabilized by pre-charging a range on which to irradiate a beam of electrons while changing the range on a step-by-step basis.Type: ApplicationFiled: October 12, 2007Publication date: October 30, 2008Applicant: Hitachi High-Technologies CorporationInventors: Yuki OJIMA, Satoru Iwama, Akira Ikegami
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Patent number: 6929892Abstract: In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.Type: GrantFiled: July 20, 2004Date of Patent: August 16, 2005Assignee: Hitachi High-Technologies CorporationInventors: Chie Shishido, Hidetoshi Morokuma, Yuki Ojima, Maki Tanaka, Wataru Nagatomo
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Publication number: 20050037271Abstract: In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.Type: ApplicationFiled: July 20, 2004Publication date: February 17, 2005Inventors: Chie Shishido, Hidetoshi Morokuma, Yuki Ojima, Maki Tanaka, Wataru Nagatomo