Abstract: A control system of a work machine includes: a three-dimensional measurement device 20 that measures a work target of a work machine 1; a detection device 25 that detects the work target; and a working equipment control unit 87 functioning as an intervention control unit that performs intervention control of the work machine 1 when both the three-dimensional measurement device 20 and the detection device 25 have detected the work target.

Abstract: A connector assembly can be attached to a surface of a substrate and has high airtightness to improve reliability. The connector assembly includes: a connector including a connector body and a terminal attached to the body; and a protective member including a wall extending in a longitudinal direction or a width direction of the body and an accommodation unit in which at least a part of four sides of a periphery is defined by the wall, the protective member being attached to the surface of the substrate with the connector accommodated in the accommodation unit. The protective member includes a protective member body made of an insulating material and a protective metal fitting made of a conductive metal integrally formed with the protective member body, and the protective member is placed on the surface of the substrate while coupled to the connector with the connector accommodated in the accommodation unit.

Abstract: A connector assembly can be easily and certainly attached to a surface of a substrate while having a simple configuration, and high airtightness or watertightness is certainly maintained to improve reliability. The connector assembly includes: a connector including a connector body, a terminal attached to the connector body, and a reinforcing metal fitting attached to the connector body, the connector being attached to a surface of a substrate; and a protective member including a pair of parallel first walls extending in a longitudinal direction of the connector body, a pair of parallel second walls extending in a width direction of the connector body, the pair of second walls being connected to both ends of each of the pair of first walls, and an opening in which four sides of periphery are defined by the first wall and the second wall, the protective member being attachable to the surface of the substrate with the connector accommodated in the opening.

Abstract: A magnetic bearing controller for controlling a magnetic levitation motor, the magnetic levitation motor including: a rotor; a pair of electromagnets that causes the rotor to levitate by electromagnetic force; an auxiliary bearing that supports a rotating shaft of the rotor when the rotor is stopped; and a rotor position detector that detects the rotor's position in a levitation direction. The magnetic bearing controller includes an operation current generator that generates an operation current value corresponding to a deviation between a position command value and the rotor's position detected by the rotor position detector. The operation current generator is configured to give a predetermined initial value greater than 0 to the operation current value at a start of levitation for causing the rotor in a state where the rotating shaft of the rotor is supported by the auxiliary bearing to levitate and be positioned at a predetermined target position.

Abstract: A magnetic bearing controller for controlling a magnetic levitation motor, the magnetic levitation motor including: a rotor; a pair of electromagnets that causes the rotor to levitate by electromagnetic force; an auxiliary bearing that supports a rotating shaft of the rotor when the rotor is stopped; and a rotor position detector that detects the rotor's position in a levitation direction. The magnetic bearing controller includes an operation current generator that generates an operation current value corresponding to a deviation between a position command value and the rotor's position detected by the rotor position detector. The operation current generator is configured to give a predetermined initial value greater than 0 to the operation current value at a start of levitation for causing the rotor in a state where the rotating shaft of the rotor is supported by the auxiliary bearing to levitate and be positioned at a predetermined target position.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A connector assembly can be easily and certainly attached to a surface of a substrate while having a simple configuration, and high airtightness or watertightness is certainly maintained to improve reliability. The connector assembly includes: a connector including a connector body, a terminal attached to the connector body, and a reinforcing metal fitting attached to the connector body, the connector being attached to a surface of a substrate; and a protective member including a pair of parallel first walls extending in a longitudinal direction of the connector body, a pair of parallel second walls extending in a width direction of the connector body, the pair of second walls being connected to both ends of each of the pair of first walls, and an opening in which four sides of periphery are defined by the first wall and the second wall, the protective member being attachable to the surface of the substrate with the connector accommodated in the opening.

Abstract: A connector assembly can be easily and certainly attached to a surface of a substrate while having a simple configuration, and high airtightness is certainly maintained to improve reliability. The connector assembly includes: a connector including a connector body and a terminal attached to the connector body; and a protective member including a wall extending in a longitudinal direction or a width direction of the connector body and an accommodation unit in which at least a part of four sides of a periphery is defined by the wall, the protective member being attached to the surface of the substrate with the connector accommodated in the accommodation unit. The protective member includes a protective member body made of an insulating material and a protective metal fitting made of a conductive metal integrally formed with the protective member body, and the protective member is placed on the surface of the substrate while coupled to the connector with the connector accommodated in the accommodation unit.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 ?m that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 ?m that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.

Abstract: A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10?6K?1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10) including a support substrate (11) dissoluble in hydrofluoric acid and a single crystal film (13) arranged on a side of a main surface (11m) of the support substrate (11), a coefficient of thermal expansion in the main surface (11m) of the support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film (20) on a main surface (13m) of the single crystal film (13) arranged on the side of the main surface (11m) of the support substrate (11), and removing the support substrate (11) by dissolving the support substrate (11) in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract: A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.