Abstract: A protection level calculation device includes a bias error model unit that outputs the upper limit and the lower limit of a bias error assumed to be contained in a measurement obtained from a positioning signal, and a protection level calculation unit that calculates a protection level for determining the validity of a positioning solution calculated based on the measurement, using the upper limit and the lower limit. The protection level calculation device can calculate the protection level effective for determining the validity of the positioning solution calculated from the measurement.

Abstract: There is provided technique that includes: (a) forming a first nitridation film on a substrate housed in a process container by supplying a first film-forming agent to the substrate; and (b) forming a second nitridation film on a surface of the first nitridation film adhering to an inside of the process container by supplying a second film-forming agent to the first nitridation film adhering to the inside of the process container in (a). When the first nitridation film having a tensile stress is formed in (a), the second nitridation film having a compressive stress is formed in (b), and when the first nitridation film having a compressive stress is formed in (a), the second nitridation film having a tensile stress is formed in (b).

Abstract: There is provided a technique that includes: forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor to the substrate; (b) supplying a nitriding agent to the substrate; and (c) supplying an active species X, which is generated by plasma-exciting an inert gas, to the substrate, wherein a stress of the nitride film is controlled to be between a tensile stress and a compressive stress or is controlled to be the compressive stress by controlling an amount of exposure of the active species X to a surface of the substrate in (c).

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas to the substrate; (b) supplying a plasma-excited gas containing nitrogen and hydrogen to the substrate by exciting a gas containing nitrogen and hydrogen into a plasma state; and (c) supplying a plasma-excited inert gas to the substrate by exciting an inert gas into a plasma state, wherein a pressure of a space where the substrate is present is set to be lower in (c) than in (b).

Abstract: A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.

Abstract: A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.

Abstract: A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.

Abstract: A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.

Abstract: Device generating high-luminance and highly-efficient ultraviolet rays by applying polyphase alternating current discharge plasma in a multi-poled magnetic field to a light source for generating ultraviolet rays and using a usual molecular gas other than mercury and rare gases. The inside of a flat container 3 is evacuated, and 1 Torr or less of a molecular gas for use in discharge light emission fills therein or is flowed thereinto. Next, a phase-controlled twelve-output alternating current power supply of 1 kW or lower is connected to twelve divisional electrodes 1 for supply of discharge electric energy. Thus, plasma P occurs with stable alternating-current glow discharge along the surface of the divisional electrodes 1 covered with a barrier layer 2. As a result of discharge, light with a wavelength unique to the molecular gas that contains ultraviolet rays is emitted and extracted outside from a light extraction window 32.