Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas to the substrate; (b) supplying a plasma-excited gas containing nitrogen and hydrogen to the substrate by exciting a gas containing nitrogen and hydrogen into a plasma state; and (c) supplying a plasma-excited inert gas to the substrate by exciting an inert gas into a plasma state, wherein a pressure of a space where the substrate is present is set to be lower in (c) than in (b).

Abstract: A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.

Abstract: A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.

Abstract: A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.

Abstract: A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.

Abstract: Device generating high-luminance and highly-efficient ultraviolet rays by applying polyphase alternating current discharge plasma in a multi-poled magnetic field to a light source for generating ultraviolet rays and using a usual molecular gas other than mercury and rare gases. The inside of a flat container 3 is evacuated, and 1 Torr or less of a molecular gas for use in discharge light emission fills therein or is flowed thereinto. Next, a phase-controlled twelve-output alternating current power supply of 1 kW or lower is connected to twelve divisional electrodes 1 for supply of discharge electric energy. Thus, plasma P occurs with stable alternating-current glow discharge along the surface of the divisional electrodes 1 covered with a barrier layer 2. As a result of discharge, light with a wavelength unique to the molecular gas that contains ultraviolet rays is emitted and extracted outside from a light extraction window 32.