Abstract: A semiconductor device includes: a silicon substrate; a first trench formed on a surface portion of the silicon substrate to isolate a plurality of active regions from one another; a first element isolation layer embedded in the first trench; a plurality of selectively-grown silicon layers formed on the respective active regions; and a second element isolation layer embedded in a second trench defined by the top surface of the first element isolation layer and opposing side surfaces of adjacent two of the selectively-grown silicon layers.

Abstract: In a semiconductor apparatus, first diffusion layers in a first diffusion layer region have an upwardly curved shape formed by upwardly protruding a surface of the silicon substrate while second diffusion layers of a second diffusion layer region have a flat shape as compared with the first diffusion layer region. The semiconductor apparatus includes a silicon substrate, the first diffusion layer region formed on the silicon substrate and including the first diffusion layers separated by a device isolation region, and the second diffusion layer region which is formed on the silicon substrate at a position different from that of the first diffusion layer region and includes the second diffusion layers.