Abstract: According to one embodiment, a structure evaluation system of an embodiment includes one or more sensors, a signal processing apparatus, and an evaluator. The plurality of sensors detect elastic waves generated from a structure. The signal processing apparatus calculates information on a frequency distribution by amplitude scale based on the plurality of elastic waves detected by each of the one or more sensors, and transmits the calculated information on the frequency distribution by amplitude scale in a wireless manner. The evaluator evaluates a state of deterioration of the structure based on the information on the frequency distribution by amplitude scale which is transmitted from the signal processing apparatus.

Abstract: A control unit performs a lane departure suppression control when a host vehicle is about to depart from a traveling lane. The control unit determines whether a low impact collision has occurred. The control unit performs a secondary collision damage mitigation control when the low impact collision is determined to have occurred while the lane departure suppression control is being performed.

Abstract: The laminate of the invention has a semiconductor substrate, a support substrate, a release layer disposed so as to come into contact with the semiconductor substrate, and an adhesive layer disposed between the support substrate and the release layer, characterized in that the release layer is a film formed from a releasing agent composition containing a polyorganosiloxane component essentially containing polydimethylsiloxane; the polyorganosiloxane component has a viscosity of 5.50 × 103 Pa·s to 0.75 × 103 Pa·s, as measured at 25° C.; and the film has a thickness of 0.01 µm to 4.90 µm.

Abstract: A simple method for removing foreign substances that are formed on a substrate during a semiconductor device production process and a composition for forming a coating film for foreign substance removal, said coating film being used in the above-described method. A composition for forming a coating film for foreign substance removal, said composition containing a polymer and a solvent and being capable of forming a coating film that dissolves in a developer liquid, wherein: the polymer is selected from among phenolic novolacs, polyhydroxystyrene derivatives and carboxylic acid-containing polymers; and the polymer is contained in an amount of 50% by mass or more relative to the total solid content in the composition.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Abstract: The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.

Abstract: A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1?(b+c)?5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.

Abstract: A resin composition which is for an insulating film and from which a cured product having a further reduced dielectric constant and dielectric loss tangent is obtained; a photosensitive resin composition; a method for producing a cured relief pattern using the photosensitive resin composition; and a semiconductor device with the cured relief pattern. This resin composition for an insulating film includes: a polyimide precursor; and a compound which is a polyimide precursor containing a polyamic acid ester, a thermal imidization accelerator, and a solvent, wherein the thermal imidization accelerator has a carboxyl group and an amino group or imino group which is deprotected by heat and exhibits basicity, and does not accelerate the imidization of the polyimide precursor before the protective group is released. Furthermore, a photosensitive resin composition which is for an insulating film and includes a photopolymerization initiator.

Abstract: A novel resist underlayer film forming composition containing a compound has a hydantoin ring. A resist underlayer film forming composition has a compound having at least two substituents of the following formula (1): (wherein R1 and R2 are each independently a hydrogen atom or a methyl group, and X1 is a C1-3 hydroxyalkyl group or a C2-6 alkyl group having one or two ether bonds in a main chain) in the molecule, and a solvent.

Abstract: A resist underlayer film-forming composition including a solvent and a copolymer including a structural unit of the following Formula (1): wherein X is a divalent chain hydrocarbon group having a carbon atom number of 2 to 10, and the divalent chain hydrocarbon group optionally has at least one sulfur atom or oxygen atom in a main chain, or optionally has at least one hydroxy group as a substituent; R is a chain hydrocarbon group having a carbon atom number of 1 to 10; and each n is 0 or 1.

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Abstract: A resist underlayer film-forming composition capable of providing a resist underlayer film exerting a sufficient anti-reflection function particularly in a KrF process, a high solvent resistance and a high dry etching speed, and enables the formation of a photoresist pattern having a good cross-sectional shape. The composition includes a copolymer containing: structural unit (A) derived from a diepoxy compound; and structural unit (B) derived from a compound represented by formula (1) [wherein: A represents a benzene or cyclohexane ring; X represents a hydrogen atom, alkyl or alkoxy group having 1 to 10 carbon atoms and optionally substituted by a halogen atom, or an alkoxycarbonyl group having 2 to 11 carbon atoms; and Y represents —COOH or -L-NHCO—Z—COOH (wherein: Z represents an alkylene group having 3 to 10 carbon atoms and optionally substituted by an oxygen atom, sulfur atom or nitrogen atom; and L represents a single bond or a spacer)].

Abstract: There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

Abstract: There is provided a composition for forming a novel resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film comprising a copolymer having a structural unit of the following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent. (wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1?(b+c)?5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.