Abstract: A composition for forming a coating film for removing foreign matters includes: a polymer; and a solvent, the composition being capable of forming a coating film that is removable with a removing liquid, in which the polymer is a polymer containing a structural unit represented by the following Formula (1): where in Formula (1), X represents an oxygen atom or NR, and R represents a hydrogen atom or a protecting group of an imide group that is deprotected by alkali.

Abstract: A substance which makes it possible to selectively mask according to the substrate surface material. A polymer film-forming composition for selectively forming a polymer film on a region (R-I) of a substrate which has the region (R-I), the surface of which includes a metal (I), and a region (R-II), the surface of which includes a material (II) which differs from the metal (I), the polymer film-forming composition including a radical generator (A) and a radical-equipped reactive compound (B); and a selective polymer film formation method for forming a film of the polymer film-forming composition on the surface of the substrate.

Abstract: Provided is an adhesive composition including: a reaction product (X) of a solid polymer (x1) having a first functional group and a liquid chain compound (x2) having, at a chain terminal, a second functional group capable of reacting with the first functional group, the reaction product (X) having the first functional group or the second functional group; and a liquid crosslinking agent (Y) having the first functional group or the second functional group, provided that when the reaction product (X) has the first functional group, the liquid crosslinking agent (Y) has the second functional group, and when the reaction product (X) has the second functional group, the liquid crosslinking agent (Y) has the first functional group.

Abstract: A laminate including: a semiconductor substrate; a support substrate; and an adhesive layer provided between the semiconductor substrate and the support substrate, wherein the adhesive layer is formed from a cured product of an adhesive composition, the adhesive composition contains a polyorganosiloxane that has an alkenyl group having 2 to 40 carbon atoms and bonded to a silicon atom, a polyorganosiloxane having a Si—H group, a platinum group metal-based catalyst, and a crosslinking inhibitor, and the crosslinking inhibitor contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound.

Abstract: A thermosetting composition that includes a polyorganosiloxane that has an alkenyl group having 2 to 40 carbon atoms and bonded to a silicon atom, a polyorganosiloxane having a Si—H group, a platinum group metal-based catalyst, and a crosslinking inhibitor. The crosslinking inhibitor contains at least one of a compound represented by formula (1), where R1 to R8 each represents a hydrogen atom, specific groups, or the like, and a compound represented by formula (2), where R11 to R13 each independently represents a hydrocarbon group optionally having a substituent.

Abstract: A method of manufacturing a laminate that includes forming a first adhesive coating layer on a surface of a release agent coating layer formed on a surface of a support substrate; forming a second adhesive coating layer on a surface of a semiconductor substrate; and bonding the first adhesive coating layer and the second adhesive coating layer, followed by heating, to form a release layer and an adhesive layer, wherein the first adhesive coating layer is formed from a first adhesive composition, the second adhesive coating layer is formed from a second adhesive composition, and one of the first adhesive composition and the second adhesive composition contains a first thermosetting component and a second thermosetting component that reacts with the first thermosetting component in the presence of a catalyst, and the other contains the catalyst.

Abstract: A method of manufacturing a laminate includes forming a first adhesive coating layer on a surface of a support substrate; forming a second adhesive coating layer on a surface of a semiconductor substrate; and bonding the first and second adhesive coating layer, followed by heating, to form an adhesive layer from the first adhesive coating layer and the second adhesive coating layer, wherein the first adhesive coating layer is formed from a first adhesive composition, the second adhesive coating layer is formed from a second adhesive composition, and one of the first adhesive composition and the second adhesive composition contains a first thermosetting component and a second thermosetting component that reacts with the first thermosetting component in the presence of a catalyst, and the other contains the catalyst, and at least one of the first adhesive composition and the second adhesive composition contains a release agent component.

Abstract: An adhesive composition, wherein the adhesive composition is applied to obtain an adhesive coating layer having a complex viscosity of 10 Pa·s or more and 10,000 Pa·s or less at 25° C. or more and 100° C. or less, and the adhesive coating layer has a viscosity reduction rate of 80% or less determined by the following formula (1): Viscosity reduction rate (%)=((V25?V100)/V25)×100??Formula (1) wherein V25: Complex viscosity at 25° C., and V100: Complex viscosity at 100° C.

Abstract: The laminate of the invention has a semiconductor substrate, a support substrate, a release layer disposed so as to come into contact with the semiconductor substrate, and an adhesive layer disposed between the support substrate and the release layer, characterized in that the release layer is a film formed from a releasing agent composition containing a polyorganosiloxane component essentially containing polydimethylsiloxane; the polyorganosiloxane component has a viscosity of 5.50 × 103 Pa·s to 0.75 × 103 Pa·s, as measured at 25° C.; and the film has a thickness of 0.01 µm to 4.90 µm.

Abstract: A simple method for removing foreign substances that are formed on a substrate during a semiconductor device production process and a composition for forming a coating film for foreign substance removal, said coating film being used in the above-described method. A composition for forming a coating film for foreign substance removal, said composition containing a polymer and a solvent and being capable of forming a coating film that dissolves in a developer liquid, wherein: the polymer is selected from among phenolic novolacs, polyhydroxystyrene derivatives and carboxylic acid-containing polymers; and the polymer is contained in an amount of 50% by mass or more relative to the total solid content in the composition.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Abstract: The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.

Abstract: A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1?(b+c)?5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Abstract: Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1a) and (1b) (in the formulae, R1, R2, X, Y, L, Q1, Q2, Q3, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.

Abstract: A resin composition which is for an insulating film and from which a cured product having a further reduced dielectric constant and dielectric loss tangent is obtained; a photosensitive resin composition; a method for producing a cured relief pattern using the photosensitive resin composition; and a semiconductor device with the cured relief pattern. This resin composition for an insulating film includes: a polyimide precursor; and a compound which is a polyimide precursor containing a polyamic acid ester, a thermal imidization accelerator, and a solvent, wherein the thermal imidization accelerator has a carboxyl group and an amino group or imino group which is deprotected by heat and exhibits basicity, and does not accelerate the imidization of the polyimide precursor before the protective group is released. Furthermore, a photosensitive resin composition which is for an insulating film and includes a photopolymerization initiator.

Abstract: A novel resist underlayer film forming composition containing a compound has a hydantoin ring. A resist underlayer film forming composition has a compound having at least two substituents of the following formula (1): (wherein R1 and R2 are each independently a hydrogen atom or a methyl group, and X1 is a C1-3 hydroxyalkyl group or a C2-6 alkyl group having one or two ether bonds in a main chain) in the molecule, and a solvent.